X-On Electronics has gained recognition as a prominent supplier of SMBJ33CA-E3/2C ESD Suppressors / TVS Diodes across the USA, India, Europe, Australia, and various other global locations. SMBJ33CA-E3/2C ESD Suppressors / TVS Diodes are a product manufactured by Vishay. We provide cost-effective solutions for ESD Suppressors / TVS Diodes, ensuring timely deliveries around the world.

SMBJ33CA-E3/2C Vishay

SMBJ33CA-E3/2C electronic component of Vishay
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Part No.SMBJ33CA-E3/2C
Manufacturer: Vishay
Category: ESD Suppressors / TVS Diodes
Description: Diode TVS Single Bi-Dir 33V 600W 2-Pin SMB T/R
Datasheet: SMBJ33CA-E3/2C Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
26: USD 0.7409 ea
Line Total: USD 19.26 
Availability - 0
MOQ: 26  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 26
Multiples : 1
26 : USD 0.7409
100 : USD 0.5832
250 : USD 0.5558
500 : USD 0.4995

   
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We are delighted to provide the SMBJ33CA-E3/2C from our ESD Suppressors / TVS Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SMBJ33CA-E3/2C and other electronic components in the ESD Suppressors / TVS Diodes category and beyond.

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SMBJ5.0A thru SMBJ188CA www.vishay.com Vishay General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES Low profile package Ideal for automated placement Glass passivated chip junction Available in uni-directional and bi-directional 600 W peak pulse power capability with a 10/1000 s waveform, repetitive rate (duty cycle): 0.01 % Excellent clamping capability DO-214AA (SMB J-Bend) Very fast response time Low incremental surge resistance Meets MSL level 1, per J-STD-020, LF maximum peak of PRIMARY CHARACTERISTICS 260 C V (bi-directional) 6.4 V to 231 V BR Material categorization: For definitions of compliance V (uni-directional) 6.4 V to 231 V BR please see www.vishay.com/doc 99912 V 5.0 V to 188 V WM P 600 W PPM MECHANICAL DATA I (uni-directional only) 100 A FSM Case: DO-214AA (SMBJ) T max. 150 C J Molding compound meets UL 94 V-0 flammability rating Polarity Uni-directional, bi-directional Base P/N-M3 - halogen-free, RoHS-compliant, and Package DO-214AA (SMBJ) commercial grade Terminals: Matte tin plated leads, solderable per TYPICAL APPLICATIONS J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 2 whisker test Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting Polarity: For uni-directional types the band denotes on ICs, MOSFET, signal lines of sensor units for consumer, cathode end, no marking on bi-directional types computer, industrial, and telecommunication. DEVICES FOR BI-DIRECTION APPLICATIONS For bi-directional use CA suffix (e.g. SMBJ10CA). Electrical characteristics apply in both directions. MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VALUE UNIT (1)(2) Peak pulse power dissipation with a 10/1000 s waveform (fig. 1) P 600 W PPM (1) Peak pulse current with a 10/1000 s waveform I See next table A PPM (2) Peak forward surge current 8.3 ms single half sine-wave uni-directional only I 100 A FSM Operating junction and storage temperature range T , T - 55 to + 150 C J STG Notes (1) Non-repetitive current pulse, per fig. 3 and derated above T = 25 C per fig. 2 A (2) Mounted on 0.2 x 0.2 (5.0 mm x 5.0 mm) copper pads to each terminal Revision: 06-Feb-14 Document Number: 89284 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SMBJ5.0A thru SMBJ188CA www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A BREAKDOWN MAXIMUM MAXIMUM MAXIMUM TEST STAND-OFF DEVICE MARKING VOLTAGE DEVICE TYPE REVERSE PEAK PULSE CLAMPING CURRENT VOLTAGE (1) CODE V AT I MODIFIED BR T LEAKAGE SURGE VOLTAGE AT I V T WM (V) J BEND LEAD AT V CURRENT I WM PPM (mA) (V) (3) (2) I (A) I (A) V (V) UNI BI MIN. MAX. D PPM C (5) (+)SMBJ5.0A KE KE 6.40 7.07 10 5.0 800 65.2 9.2 (+)SMBJ6.0A KG KG 6.67 7.37 10 6.0 800 58.3 10.3 (+)SMBJ6.5A KK AK 7.22 7.98 10 6.5 500 53.6 11.2 (+)SMBJ7.0A KM KM 7.78 8.60 10 7.0 200 50.0 12.0 (+)SMBJ7.5A KP AP 8.33 9.21 1.0 7.5 100 46.5 12.9 (+)SMBJ8.0A KR AR 8.89 9.83 1.0 8.0 50 44.1 13.6 (+)SMBJ8.5A KT AT 9.44 10.4 1.0 8.5 20 41.7 14.4 (+)SMBJ9.0A KV AV 10.0 11.1 1.0 9.0 10 39.0 15.4 (+)SMBJ10A KX AX 11.1 12.3 1.0 10 5.0 35.3 17.0 (+)SMBJ11A KZ KZ 12.2 13.5 1.0 11 5.0 33.0 18.2 (+)SMBJ12A LE BE 13.3 14.7 1.0 12 5.0 30.2 19.9 (+)SMBJ13A LG LG 14.4 15.9 1.0 13 1.0 27.9 21.5 (+)SMBJ14A LK BK 15.6 17.2 1.0 14 1.0 25.9 23.2 (+)SMBJ15A LM BM 16.7 18.5 1.0 15 1.0 24.6 24.4 (+)SMBJ16A LP LM 17.8 19.7 1.0 16 1.0 23.1 26.0 (+)SMBJ17A LR LR 18.9 20.9 1.0 17 1.0 21.7 27.6 (+)SMBJ18A LT BT 20.0 22.1 1.0 18 1.0 20.5 29.2 (+)SMBJ20A LV LV 22.2 24.5 1.0 20 1.0 18.5 32.4 (+)SMBJ22A LX BX 24.4 26.9 1.0 22 1.0 16.9 35.5 (+)SMBJ24A LZ BZ 26.7 29.5 1.0 24 1.0 15.4 38.9 (+)SMBJ26A ME CE 28.9 31.9 1.0 26 1.0 14.3 42.1 (+)SMBJ28A MG MG 31.1 34.4 1.0 28 1.0 13.2 45.4 (+)SMBJ30A MK CK 33.3 36.8 1.0 30 1.0 12.4 48.4 (+)SMBJ33A MM CM 36.7 40.6 1.0 33 1.0 11.3 53.3 (+)SMBJ36A MP CP 40.0 44.2 1.0 36 1.0 10.3 58.1 (+)SMBJ40A MR CR 44.4 49.1 1.0 40 1.0 9.3 64.5 (+)SMBJ43A MT CT 47.8 52.8 1.0 43 1.0 8.6 69.4 (+)SMBJ45A MV MV 50.0 55.3 1.0 45 1.0 8.3 72.7 (+)SMBJ48A MX MX 53.3 58.9 1.0 48 1.0 7.8 77.4 (+)SMBJ51A MZ MZ 56.7 62.7 1.0 51 1.0 7.3 82.4 (+)SMBJ54A NE NE 60.0 66.3 1.0 54 1.0 6.9 87.1 (+)SMBJ58A NG NG 64.4 71.2 1.0 58 1.0 6.4 93.6 (+)SMBJ60A NK NK 66.7 73.7 1.0 60 1.0 6.2 96.8 (+)SMBJ64A NM NM 71.1 78.6 1.0 64 1.0 5.8 103 (+)SMBJ70A NP NP 77.8 86.0 1.0 70 1.0 5.3 113 (+)SMBJ75A NR NR 83.3 92.1 1.0 75 1.0 5.0 121 (+)SMBJ78A NT NT 86.7 95.8 1.0 78 1.0 4.8 126 (+)SMBJ85A NV NV 94.4 104 1.0 85 1.0 4.4 137 (+)SMBJ90A NX NX 100 111 1.0 90 1.0 4.1 146 (+)SMBJ100A NZ NZ 111 123 1.0 100 1.0 3.7 162 (+)SMBJ110A PE PE 122 135 1.0 110 1.0 3.4 177 (+)SMBJ120A PG PG 133 147 1.0 120 1.0 3.1 193 (+)SMBJ130A PK PK 144 159 1.0 130 1.0 2.9 209 (+)SMBJ150A PM PM 167 185 1.0 150 1.0 2.5 243 (+)SMBJ160A PP PP 178 197 1.0 160 1.0 2.3 259 (+)SMBJ170A PR PR 189 209 1.0 170 1.0 2.2 275 SMBJ188A PS PS 209 231 1.0 188 1.0 2.0 328 Notes (1) Pulse test: t 50 ms p (2) Surge current waveform per fig. 3 and derate per fig. 2 (3) For bi-directional types having V of 10 V and less, the I limit is doubled WM D (4) All terms and symbols are consistent with ANSI/IEEE C62.35 (5) For the bi-directional SMBJ5.0CA, the maximum V is 7.25 V BR (6) V = 3.5 V max. at I = 50 A (uni-directional only) F F (+) Underwriters laboratory recognition for the classification of protectors (QVGQ2) under the UL standard for safety 497B and file number E136766 for both uni-directional and bi-directional devices Revision: 06-Feb-14 Document Number: 89284 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
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