X-On Electronics has gained recognition as a prominent supplier of SMBJ51CA-E3/2C ESD Suppressors / TVS Diodes across the USA, India, Europe, Australia, and various other global locations. SMBJ51CA-E3/2C ESD Suppressors / TVS Diodes are a product manufactured by Vishay. We provide cost-effective solutions for ESD Suppressors / TVS Diodes, ensuring timely deliveries around the world.

SMBJ51CA-E3/2C Vishay

SMBJ51CA-E3/2C electronic component of Vishay
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Part No.SMBJ51CA-E3/2C
Manufacturer: Vishay
Category: ESD Suppressors / TVS Diodes
Description: TVS Diodes - Transient Voltage Suppressors 600W 51V 5% Bidir
Datasheet: SMBJ51CA-E3/2C Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.702 ea
Line Total: USD 0.7 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 0.702
5 : USD 0.6318
50 : USD 0.4504
250 : USD 0.2516

   
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We are delighted to provide the SMBJ51CA-E3/2C from our ESD Suppressors / TVS Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SMBJ51CA-E3/2C and other electronic components in the ESD Suppressors / TVS Diodes category and beyond.

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SMBJ5.0D thru SMBJ188D, SMBJ5.0CD thru SMBJ120CD www.vishay.com Vishay General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES Low profile package Ideal for automated placement 3.5 %: very tight V tolerance BR Low leakage current Available in uni-directional and bi-directional 600 W peak pulse power capability with a 10/1000 s waveform, repetitive rate (duty cycle): 0.01 % Excellent clamping capability DO-214AA (SMBJ) Very fast response time Low incremental surge resistance Meets MSL level 1, per J-STD-020, LF maximum peak PRIMARY CHARACTERISTICS of 260 C V (uni-directional) 6.5 V to 228 V BR Material categorization: for definitions of compliance V (bi-directional) 6.5 V to 145 V BR please see www.vishay.com/doc 99912 V (uni-directional) 5.0 V to 188 V WM V (bi-directional) 5.0 V to 120 V TYPICAL APPLICATIONS WM P 600 W Use in sensitive electronics protection against voltage PPM transients induced by inductive load switching and lighting P at T = 50 C 5.0 W D M on ICs, MOSFETs, signal lines of sensor units for consumer, P at T = 25 C 1.0 W D A computer, industrial, and telecommunication. T max. 150 C J MECHANICAL DATA Polarity Uni-directional, bi-directional Case: DO-214AA (SMBJ) Package DO-214AA (SMBJ) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and industrial grade Terminals: matte tin plated leads, solderable per DEVICES FOR BI-DIRECTIONAL APPLICATIONS J-STD-002 and JESD 22-B102 For bi-directional devices use CD suffix (e.g. SMBJ5.0CD). M3 suffix meets JESD 201 class 2 whisker test Electrical characteristics apply in both directions. Polarity: for uni-directional types the band denotes cathode end, no cathode band on bi-directional types MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VALUE UNIT (1) Peak pulse power dissipation with a 10/1000 s waveform P 600 W PPM (1) Peak pulse current with a 10/1000 s waveform I See next table A PPM (2) T = 50 C P 5.0 M D Power dissipation W (3) T = 25 C P 1.0 A D Operating junction and storage temperature range T , T -55 to +150 C J STG Notes (1) Non-repetitive current pulse, per fig. 3 and derated above T = 25 C per fig. 2 A (2) Power dissipation mounted on infinite heatsink (3) Power dissipation mounted on minimum recommended pad layout Revision: 10-Sep-15 Document Number: 87606 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 SMBJ5.0D thru SMBJ188D, SMBJ5.0CD thru SMBJ120CD www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A BREAKDOWN MAXIMUM MAXIMUM MAXIMUM DEVICE TEST VOLTAGE STAND-OFF REVERSE PEAK PULSE CLAMPING MARKING (1) CURRENT V AT I DEVICE TYPE BR T VOLTAGE LEAKAGE SURGE VOLTAGE CODE I T (V) V (V) AT V CURRENT AT I WM WM PPM (mA) (2) (3) I (A) I (A) V (V) UNI BI MIN. MAX. D PPM C (+)SMBJ5.0D 6AA 6AA 6.50 6.97 10 5.0 500 65.9 9.1 (+)SMBJ6.0D 6AB 6AB 6.77 7.27 10 6.0 500 58.9 10.2 (+)SMBJ6.5D 6AC 6AC 7.33 7.87 10 6.5 300 54.5 11.0 (+)SMBJ7.0D 6AD 6AD 7.90 8.48 10 7.0 150 50.8 11.8 (+)SMBJ7.5D 6AE 6AE 8.46 9.08 1.0 7.5 75 47.2 12.7 (+)SMBJ8.0D 6AF 6AF 9.03 9.69 1.0 8.0 35 44.8 13.4 (+)SMBJ8.5D 6AG 6AG 9.57 10.3 1.0 8.5 15 42.2 14.3 (+)SMBJ9.0D 6AH 6AH 10.2 10.9 1.0 9.0 5.0 39.7 15.1 (+)SMBJ10D 6AK 6AK 11.3 12.1 1.0 10 2.0 35.9 16.7 (+)SMBJ11D 6AL 6AL 12.4 13.3 1.0 11 2.0 33.5 17.9 (+)SMBJ12D 6AM 6AM 13.5 14.5 1.0 12 2.0 30.6 19.6 (+)SMBJ13D 6AN 6AN 14.6 15.7 1.0 13 0.5 28.3 21.2 (+)SMBJ14D 6AP 6AP 15.8 17.0 1.0 14 0.5 26.2 22.9 (+)SMBJ15D 6AQ 6AQ 17.0 18.2 1.0 15 0.5 25.0 24.0 (+)SMBJ16D 6AR 6AR 18.1 19.4 1.0 16 0.5 23.4 25.6 (+)SMBJ17D 6AS 6AS 19.2 20.6 1.0 17 0.5 22.1 27.2 (+)SMBJ18D 6AT 6AT 20.3 21.8 1.0 18 0.5 20.8 28.8 (+)SMBJ20D 6AU 6AU 22.5 24.2 1.0 20 0.5 18.8 32.0 (+)SMBJ22D 6AV 6AV 24.8 26.6 1.0 22 0.5 17.1 35.1 (+)SMBJ24D 6AW 6AW 27.1 29.1 1.0 24 0.5 15.6 38.4 (+)SMBJ26D 6AX 6AX 29.3 31.5 1.0 26 0.5 14.5 41.6 (+)SMBJ28D 6AY 6AY 31.6 33.9 1.0 28 0.5 13.4 44.7 (+)SMBJ30D 6AZ 6AZ 33.8 36.3 1.0 30 0.5 12.6 47.7 (+)SMBJ33D 6BA 6BA 37.3 40.0 1.0 33 0.5 11.5 52.5 (+)SMBJ36D 6BB 6BB 40.6 43.6 1.0 36 0.5 10.5 57.3 (+)SMBJ40D 6BC 6BC 45.1 48.4 1.0 40 0.5 9.43 63.6 (+)SMBJ43D 6BD 6BD 48.5 52.1 1.0 43 0.5 8.76 68.5 (+)SMBJ45D 6BE 6BE 50.8 54.5 1.0 45 0.5 8.40 71.6 (+)SMBJ48D 6BF 6BF 54.1 58.1 1.0 48 0.5 7.90 76.3 (+)SMBJ51D 6BG 6BG 57.6 61.8 1.0 51 0.5 7.40 81.2 (+)SMBJ54D 6BH 6BH 60.9 65.4 1.0 54 0.5 7.00 85.9 (+)SMBJ58D 6BK 6BK 65.4 70.2 1.0 58 0.5 6.50 92.3 (+)SMBJ60D 6BL 6BL 67.7 72.7 1.0 60 0.5 6.28 95.5 (+)SMBJ64D 6BM 6BM 72.2 77.5 1.0 64 0.5 5.88 102 (+)SMBJ70D 6BN 6BN 79.0 84.8 1.0 70 0.5 5.40 111 (+)SMBJ75D 6BP 6BP 84.6 90.8 1.0 75 0.5 5.06 119 (+)SMBJ78D 6BQ 6BQ 88.1 94.4 1.0 78 0.5 4.86 124 (+)SMBJ85D 6BR 6BR 95.7 103 1.0 85 0.5 4.46 135 (+)SMBJ90D 6BS 6BS 102 109 1.0 90 0.5 4.17 144 (+)SMBJ100D 6BT 6BT 113 121 1.0 100 0.5 3.77 159 (+)SMBJ110D 6BU 6BU 124 133 1.0 110 0.5 3.45 174 (+)SMBJ120D 6BV 6BV 135 145 1.0 120 0.5 3.15 190 (+)SMBJ130D 6BW - 146 157 1.0 130 0.5 2.94 206 (+)SMBJ150D 6BX - 170 182 1.0 150 0.5 2.53 239 (+)SMBJ160D 6BY - 181 194 1.0 160 0.5 2.34 256 (+)SMBJ170D 6BZ - 192 206 1.0 170 0.5 2.23 270 SMBJ188D 6CA - 212 228 1.0 188 0.5 2.03 301 Notes All terms and symbols are consistent with ANSI/IEEE C62.35 (1) Pulse test: t 50 ms p (2) For bi-directional types having V of 12 V and less, the I limit is doubled WM D (3) Surge current waveform per fig. 3 and derate per fig. 2 (+) Underwriters Laboratory Recognition for the classification of protectors (QVGQ2) under the UL standard for safety 497B and file number E136766 for both uni-directional and bi-directional device Revision: 10-Sep-15 Document Number: 87606 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
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