X-On Electronics has gained recognition as a prominent supplier of SMBJ7.0A-E3/52 ESD Suppressors / TVS Diodes across the USA, India, Europe, Australia, and various other global locations. SMBJ7.0A-E3/52 ESD Suppressors / TVS Diodes are a product manufactured by Vishay. We provide cost-effective solutions for ESD Suppressors / TVS Diodes, ensuring timely deliveries around the world.

SMBJ7.0A-E3/52 Vishay

SMBJ7.0A-E3/52 electronic component of Vishay
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Part No.SMBJ7.0A-E3/52
Manufacturer: Vishay
Category: ESD Suppressors / TVS Diodes
Description: ESD Suppressors / TVS Diodes 7.0V 1000W UniDir TransZorb 5% Tol
Datasheet: SMBJ7.0A-E3/52 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
750: USD 0.0564 ea
Line Total: USD 42.3 
Availability - 31282
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ: 750  Multiples: 750
Pack Size: 750
Availability Price Quantity
1455
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.089
6000 : USD 0.088
9000 : USD 0.0859
12000 : USD 0.0851
15000 : USD 0.0787
30000 : USD 0.078

31282
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 750
Multiples : 750
750 : USD 0.0564
3000 : USD 0.0564
11250 : USD 0.0564
30000 : USD 0.0564
75000 : USD 0.0564

137
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 5
Multiples : 5
5 : USD 0.1908
50 : USD 0.1574
150 : USD 0.1431
750 : USD 0.1118
2250 : USD 0.1038
5250 : USD 0.0991

1165
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.406
10 : USD 0.28
100 : USD 0.1456
157 : USD 0.1092
430 : USD 0.1036

1455
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1500
Multiples : 1500
1500 : USD 0.0935

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Vesd - Voltage ESD Contact
Vesd - Voltage ESD Air Gap
Polarity
Termination Style
Breakdown Voltage
Working Voltage
Clamping Voltage
Package / Case
Pppm - Peak Pulse Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Cnhts
Hts Code
Mxhts
Pd - Power Dissipation
Factory Pack Quantity :
Subcategory
Taric
Tradename
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SMBJ7.0A-E3/52 from our ESD Suppressors / TVS Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SMBJ7.0A-E3/52 and other electronic components in the ESD Suppressors / TVS Diodes category and beyond.

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333 3 SMBJ5.0A thru SMBJ188A www.vishay.com Vishay General Semiconductor Surface-Mount TRANSZORB Transient Voltage Suppressors FEATURES Available Low profile package Ideal for automated placement Glass passivated chip junction Available in unidirectional and bidirectional 600 W peak pulse power capability with a 10/1000 s waveform, repetitive rate Available (duty cycle): 0.01 % SMB (DO-214AA) Excellent clamping capability Very fast response time Cathode Anode Low incremental surge resistance (unidirectional) (bidirectional) Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C LINKS TO ADDITIONAL RESOURCES AEC-Q101 qualified available - Automotive ordering code: base P/NHE3 or P/NHM3 Material categorization: for definitions of compliance 3D Models please see www.vishay.com/doc 99912 MECHANICAL DATA PRIMARY CHARACTERISTICS Case: SMB (DO-214AA) V (bidirectional) 6.4 V to 231 V BR Molding compound meets UL 94 V-0 flammability rating V (unidirectional) 6.4 V to 231 V BR Base P/N-E3 - RoHS-compliant, commercial grade V 5.0 V to 188 V WM Base P/N-M3 - halogen-free, RoHS-compliant, commercial P 600 W PPM grade P 5.0 W D Base P/NHE3 X - RoHS-compliant and AEC-Q101 qualified I (unidirectional only) 100 A Base P/NHM3 X - halogen-free, RoHS-compliant, and FSM AEC-Q101 qualified T max. 150 C J ( X denotes revision code e.g. A, B, ...) Polarity Unidirectional, bidirectional Terminals: matte tin plated leads, solderable per Package SMB (DO-214AA) J-STD-002 and JESD 22-B102 E3, M3, HE3, and HM3 suffix meets JESD 201 class 2 DEVICES FOR BIDIRECTION APPLICATIONS whisker test For bidirectional devices use CA suffix (e.g. SMBJ10CA). Polarity: for unidirectional types the band denotes cathode Electrical characteristics apply in both directions. end, no marking on bidirectional types TYPICAL APPLICATIONS Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial, and telecommunication. MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VALUE UNIT (1)(2) Peak pulse power dissipation with a 10/1000 s waveform (fig. 1) P 600 W PPM (1) Peak pulse current with a 10/1000 s waveform I See next table A PPM Power dissipation on infinite heatsink at T = 50 C P 5.0 W A D (2) Peak forward surge current 8.3 ms single half sine-wave unidirectional only I 100 A FSM Operating junction and storage temperature range T , T -55 to +150 C J STG Notes (1) Non-repetitive current pulse, per fig. 3 and derated above T = 25 C per fig. 2 A (2) Mounted on 0.2 x 0.2 (5.0 mm x 5.0 mm) copper pads to each terminal Revision: 30-Jun-2021 Document Number: 88392 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD D SMBJ5.0A thru SMBJ188A www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A BREAKDOWN MAXIMUM MAXIMUM MAXIMUM MAXIMUM DEVICE DEVICE TYPE TEST STAND-OFF VOLTAGE REVERSE PEAK PULSE CLAMPING TEMPERATURE MARKING MODIFIED CURRENT VOLTAGE (1) V AT I BR T LEAKAGE SURGE VOLTAGE AT COEFFICIENT CODE J BEND I V T WM (V) AT V CURRENT I OF V WM PPM BR LEAD (mA) (V) (3) (2) I (A) I (A) V (V) (%/C) UNI BI MIN. MAX. D PPM C (+) (5) SMBJ5.0A KE KE 6.40 7.07 10 5.0 800 65.2 9.2 0.057 (+) SMBJ6.0A KG KG 6.67 7.37 10 6.0 800 58.3 10.3 0.059 (+) SMBJ6.5A KK AK 7.22 7.98 10 6.5 500 53.6 11.2 0.061 (+) SMBJ7.0A KM KM 7.78 8.60 10 7.0 200 50.0 12.0 0.065 (+) SMBJ7.5A KP AP 8.33 9.21 1.0 7.5 100 46.5 12.9 0.067 (+) SMBJ8.0A KR AR 8.89 9.83 1.0 8.0 50 44.1 13.6 0.069 (+) SMBJ8.5A KT AT 9.44 10.4 1.0 8.5 20 41.7 14.4 0.073 (+) SMBJ9.0A KV AV 10.0 11.1 1.0 9.0 10 39.0 15.4 0.074 (+) SMBJ10A KX AX 11.1 12.3 1.0 10 5.0 35.3 17.0 0.078 (+) SMBJ11A KZ KZ 12.2 13.5 1.0 11 5.0 33.0 18.2 0.080 (+) SMBJ12A LE BE 13.3 14.7 1.0 12 5.0 30.2 19.9 0.083 (+) SMBJ13A LG LG 14.4 15.9 1.0 13 1.0 27.9 21.5 0.084 (+) SMBJ14A LK BK 15.6 17.2 1.0 14 1.0 25.9 23.2 0.087 (+) SMBJ15A LM BM 16.7 18.5 1.0 15 1.0 24.6 24.4 0.088 (+) SMBJ16A LP LM 17.8 19.7 1.0 16 1.0 23.1 26.0 0.089 (+) SMBJ17A LR LR 18.9 20.9 1.0 17 1.0 21.7 27.6 0.090 (+) SMBJ18A LT BT 20.0 22.1 1.0 18 1.0 20.5 29.2 0.092 (+) SMBJ20A LV LV 22.2 24.5 1.0 20 1.0 18.5 32.4 0.094 (+) SMBJ22A LX BX 24.4 26.9 1.0 22 1.0 16.9 35.5 0.096 (+) SMBJ24A LZ BZ 26.7 29.5 1.0 24 1.0 15.4 38.9 0.096 (+) SMBJ26A ME CE 28.9 31.9 1.0 26 1.0 14.3 42.1 0.097 (+) SMBJ28A MG MG 31.1 34.4 1.0 28 1.0 13.2 45.4 0.098 (+) SMBJ30A MK CK 33.3 36.8 1.0 30 1.0 12.4 48.4 0.099 (+) SMBJ33A MM CM 36.7 40.6 1.0 33 1.0 11.3 53.3 0.100 (+) SMBJ36A MP CP 40.0 44.2 1.0 36 1.0 10.3 58.1 0.100 (+) SMBJ40A MR CR 44.4 49.1 1.0 40 1.0 9.3 64.5 0.101 (+) SMBJ43A MT CT 47.8 52.8 1.0 43 1.0 8.6 69.4 0.102 (+) SMBJ45A MV MV 50.0 55.3 1.0 45 1.0 8.3 72.7 0.102 (+) SMBJ48A MX MX 53.3 58.9 1.0 48 1.0 7.8 77.4 0.103 (+) SMBJ51A MZ MZ 56.7 62.7 1.0 51 1.0 7.3 82.4 0.104 (+) SMBJ54A NE NE 60.0 66.3 1.0 54 1.0 6.9 87.1 0.104 (+) SMBJ58A NG NG 64.4 71.2 1.0 58 1.0 6.4 93.6 0.104 (+) SMBJ60A NK NK 66.7 73.7 1.0 60 1.0 6.2 96.8 0.105 (+) SMBJ64A NM NM 71.1 78.6 1.0 64 1.0 5.8 103 0.105 (+) SMBJ70A NP NP 77.8 86.0 1.0 70 1.0 5.3 113 0.105 (+) SMBJ75A NR NR 83.3 92.1 1.0 75 1.0 5.0 121 0.106 (+) SMBJ78A NT NT 86.7 95.8 1.0 78 1.0 4.8 126 0.106 (+) SMBJ85A NV NV 94.4 104 1.0 85 1.0 4.4 137 0.106 (+) SMBJ90A NX NX 100 111 1.0 90 1.0 4.1 146 0.106 (+) SMBJ100A NZ NZ 111 123 1.0 100 1.0 3.7 162 0.107 (+) SMBJ110A PE PE 122 135 1.0 110 1.0 3.4 177 0.107 (+) SMBJ120A PG PG 133 147 1.0 120 1.0 3.1 193 0.108 (+) SMBJ130A PK PK 144 159 1.0 130 1.0 2.9 209 0.108 (+) SMBJ150A PM PM 167 185 1.0 150 1.0 2.5 243 0.108 (+) SMBJ160A PP PP 178 197 1.0 160 1.0 2.3 259 0.108 (+) SMBJ170A PR PR 189 209 1.0 170 1.0 2.2 275 0.108 SMBJ188A PS PS 209 231 1.0 188 1.0 2.0 328 0.108 Notes (1) Pulse test: t 50 ms p (2) Surge current waveform per fig. 3 and derate per fig. 2 (3) For bidirectional types having V of 10 V and less, the I limit is doubled WM D (4) All terms and symbols are consistent with ANSI/IEEE C62.35 (5) For the bidirectional SMBJ5.0CA, the maximum V is 7.25 V BR (6) V = 3.5 V max. at I = 50 A (unidirectional only) F F (+) Underwriters laboratory recognition for the classification of protectors (QVGQ2) under the UL standard for safety 497B and file number E136766 for both uni-directional and bi-directional devices Revision: 30-Jun-2021 Document Number: 88392 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
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