X-On Electronics has gained recognition as a prominent supplier of SMCJ120CA-E3/57T ESD Suppressors / TVS Diodes across the USA, India, Europe, Australia, and various other global locations. SMCJ120CA-E3/57T ESD Suppressors / TVS Diodes are a product manufactured by Vishay. We provide cost-effective solutions for ESD Suppressors / TVS Diodes, ensuring timely deliveries around the world.

SMCJ120CA-E3/57T Vishay

SMCJ120CA-E3/57T electronic component of Vishay
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Part No.SMCJ120CA-E3/57T
Manufacturer: Vishay
Category: ESD Suppressors / TVS Diodes
Description: TVS Diodes - Transient Voltage Suppressors 1500W 120V Bidirect
Datasheet: SMCJ120CA-E3/57T Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1700: USD 0.0741 ea
Line Total: USD 125.97 
Availability - 8245
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ: 1700  Multiples: 1700
Pack Size: 1700
Availability Price Quantity
8245
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 1700
Multiples : 1700
1700 : USD 0.0766

569
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 19
Multiples : 1
19 : USD 0.273
20 : USD 0.2566
25 : USD 0.2558
100 : USD 0.2267
250 : USD 0.2259
500 : USD 0.192

20612
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 850
Multiples : 850
850 : USD 0.1612
2550 : USD 0.1586
4250 : USD 0.1573
17000 : USD 0.1534
25500 : USD 0.1508

2599
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ : 1
Multiples : 1
1 : USD 0.4367
10 : USD 0.3564
100 : USD 0.2684
500 : USD 0.2299
850 : USD 0.2057

569
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 45
Multiples : 1
45 : USD 0.2477
100 : USD 0.2195
250 : USD 0.2187
500 : USD 0.1859

824
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 224
Multiples : 1
224 : USD 0.1762
500 : USD 0.1668

8245
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 1700
Multiples : 1700
1700 : USD 0.0741

14841
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 850
Multiples : 850
850 : USD 0.4971

   
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RoHS - XON
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Product Type
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Breakdown Voltage
Working Voltage
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Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
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Operating Voltage
Peak Surge Current
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Brand
Mounting Style
Peak Pulse Power Dissipation
Factory Pack Quantity :
Tradename
Cnhts
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Mxhts
Pd - Power Dissipation
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We are delighted to provide the SMCJ120CA-E3/57T from our ESD Suppressors / TVS Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SMCJ120CA-E3/57T and other electronic components in the ESD Suppressors / TVS Diodes category and beyond.

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333 3 SMCJ5.0A thru SMCJ188CA www.vishay.com Vishay General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES Available Low profile package Ideal for automated placement Glass passivated chip junction Available in unidirectional and bidirectional Excellent clamping capability Very fast response time Available SMC (DO-214AB) Low incremental surge resistance Cathode Anode Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C (unidirectional) (bidirectional) AEC-Q101 qualified available - Automotive ordering code: base P/NHE3 or P/NHM3 LINKS TO ADDITIONAL RESOURCES Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 3D Models TYPICAL APPLICATIONS Use in sensitive electronics protection against voltage PRIMARY CHARACTERISTICS transients induced by inductive load switching and lightin g V unidirectional 6.40 V to 231 V on ICs, MOSFET, signal lines of sensor units for consumer, BR computer, industrial, automotive, and telecommunication. V bidirectional 6.40 V to 231 V BR V 5.0 V to 188 V WM MECHANICAL DATA P 1500 W PPM Case: SMC (DO-214AB) P 6.5 W D Molding compound meets UL 94 V-0 flammability rating I (unidirectional only) 200 A FSM Base P/N-E3 - RoHS-compliant, commercial grade T max. 150 C J Base P/N-M3 - halogen-free, RoHS-compliant, commercial Polarity Unidirectional, bidirectional grade Package SMC (DO-214AB) Base P/NHE3 X - RoHS-compliant and AEC-Q101 qualified Base P/NHM3 X - halogen-free, RoHS-compliant, and AEC-Q101 qualified DEVICES FOR BIDIRECTION APPLICATIONS ( X denotes revision code e.g. A, B, ...) For bidirectional devices use CA suffix (e.g. SMCJ188CA). Terminals: matte tin plated leads, solderable per Electrical characteristics apply in both directions. J-STD-002 and JESD 22-B102 E3, M3, HE3, and HM3 suffix meets JESD 201 class 2 whisker test Polarity: for unidirectional types the band denotes cathode end, no marking on bidirectional types MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VALUE UNIT (1)(2) Peak pulse power dissipation with a 10/1000 s waveform P 1500 W PPM (1) Peak pulse current with a 10/1000 s waveform I See next table A PPM Power dissipation on infinite heatsink, T = 50 C P 6.5 W A D (2) Peak forward surge current 8.3 ms single half sine-wave unidirectional only I 200 A FSM Operating junction and storage temperature range T , T -55 to +150 C J STG Notes (1) Non-repetitive current pulse, per fig. 3 and derated above T = 25 C per fig. 2 A (2) Mounted on 0.31 x 0.31 (8.0 mm x 8.0 mm) copper pads to each terminal Revision: 30-Jun-2021 Document Number: 88394 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD D SMCJ5.0A thru SMCJ188CA www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A BREAKDOWN MAXIMUM MAXIMUM MAXIMUM MAXIMUM DEVICE DEVICE TYPE TEST STAND-OFF VOLTAGE REVERSE PEAK PULSE CLAMPING TEMPERATURE MARKING MODIFIED CURRENT VOLTAGE (1) V AT I BR T LEAKAGE SURGE VOLTAGE COEFFICIENT CODE J BEND I V T WM (V) AT V CURRENT AT I OF V WM PPM BR LEAD (mA) (V) (3) (2) I (A) I (A) V (V) (%/C) UNI BI MIN. MAX. D PPM C (+) (5) SMCJ5.0A GDE GDE 6.40 7.07 10 5.0 1000 163.0 9.2 0.057 (+) SMCJ6.0A GDG GDG 6.67 7.37 10 6.0 1000 145.6 10.3 0.059 (+) SMCJ6.5A GDK BDK 7.22 7.98 10 6.5 500 133.9 11.2 0.061 (+) SMCJ7.0A GDM GDM 7.78 8.60 10 7.0 200 125.0 12.0 0.065 (+) SMCJ7.5A GDP BDP 8.33 9.21 1.0 7.5 100 116.3 12.9 0.067 (+) SMCJ8.0A GDR BDR 8.89 9.83 1.0 8.0 50 110.3 13.6 0.069 (+) SMCJ8.5A GDT BDT 9.44 10.4 1.0 8.5 20 104.2 14.4 0.073 (+) SMCJ9.0A GDV BDV 10.0 11.1 1.0 9.0 10 97.4 15.4 0.074 (+) SMCJ10A GDX BDX 11.1 12.3 1.0 10 5.0 88.2 17.0 0.078 (+) SMCJ11A GDZ GDZ 12.2 13.5 1.0 11 5.0 82.4 18.2 0.080 (+) SMCJ12A GEE BEE 13.3 14.7 1.0 12 5.0 75.4 19.9 0.083 (+) SMCJ13A GEG GEG 14.4 15.9 1.0 13 1.0 69.8 21.5 0.084 (+) SMCJ14A GEK BEK 15.6 17.2 1.0 14 1.0 64.7 23.2 0.087 (+) SMCJ15A GEM BEM 16.7 18.5 1.0 15 1.0 61.5 24.4 0.088 (+) SMCJ16A GEP GEP 17.8 19.7 1.0 16 1.0 57.7 26.0 0.089 (+) SMCJ17A GER GER 18.9 20.9 1.0 17 1.0 54.3 27.6 0.090 (+) SMCJ18A GET BET 20.0 22.1 1.0 18 1.0 51.4 29.2 0.092 (+) SMCJ20A GEV BEV 22.2 24.5 1.0 20 1.0 46.3 32.4 0.094 (+) SMCJ22A GEX BEX 24.4 26.9 1.0 22 1.0 42.3 35.5 0.096 (+) SMCJ24A GEZ BEZ 26.7 29.5 1.0 24 1.0 38.6 38.9 0.096 (+) SMCJ26A GFE BFE 28.9 31.9 1.0 26 1.0 35.6 42.1 0.097 (+) SMCJ28A GFG BFG 31.1 34.4 1.0 28 1.0 33.0 45.4 0.098 (+) SMCJ30A GFK BFK 33.3 36.8 1.0 30 1.0 31.0 48.4 0.099 (+) SMCJ33A GFM BFM 36.7 40.6 1.0 33 1.0 28.1 53.3 0.100 (+) SMCJ36A GFP BFP 40.0 44.2 1.0 36 1.0 25.8 58.1 0.100 (+) SMCJ40A GFR BFR 44.4 49.1 1.0 40 1.0 23.3 64.5 0.101 (+) SMCJ43A GFT BFT 47.8 52.8 1.0 43 1.0 21.6 69.4 0.102 (+) SMCJ45A GFV GFV 50.0 55.3 1.0 45 1.0 20.6 72.7 0.102 (+) SMCJ48A GFX GFX 53.3 58.9 1.0 48 1.0 19.4 77.4 0.103 (+) SMCJ51A GFZ GFZ 56.7 62.7 1.0 51 1.0 18.2 82.4 0.104 (+) SMCJ54A GGE GGE 60.0 66.3 1.0 54 1.0 17.2 87.1 0.104 (+) SMCJ58A GGG GGG 64.4 71.2 1.0 58 1.0 16.0 93.6 0.104 (+) SMCJ60A GGK GGK 66.7 73.7 1.0 60 1.0 15.5 96.8 0.105 (+) SMCJ64A GGM GGM 71.1 78.6 1.0 64 1.0 14.6 103 0.105 (+) SMCJ70A GGP GGP 77.8 86.0 1.0 70 1.0 13.3 113 0.105 (+) SMCJ75A GGR GGR 83.3 92.1 1.0 75 1.0 12.4 121 0.106 (+) SMCJ78A GGT GGT 86.7 95.8 1.0 78 1.0 11.9 126 0.106 (+) SMCJ85A GGV GGV 94.4 104 1.0 85 1.0 10.9 137 0.106 (+) SMCJ90A GGX GGX 100 111 1.0 90 1.0 10.3 146 0.106 (+) SMCJ100A GGZ GGZ 111 123 1.0 100 1.0 9.3 162 0.107 (+) SMCJ110A GHE GHE 122 135 1.0 110 1.0 8.5 177 0.107 (+) SMCJ120A GHG GHG 133 147 1.0 120 1.0 7.8 193 0.108 (+) SMCJ130A GHK GHK 144 159 1.0 130 1.0 7.2 209 0.108 (+) SMCJ150A GHM GHM 167 185 1.0 150 1.0 6.2 243 0.108 (+) SMCJ160A GHP GHP 178 197 1.0 160 1.0 5.8 259 0.108 (+) SMCJ170A GHR GHR 189 209 1.0 170 1.0 5.5 275 0.108 SMCJ188A GHS GHS 209 231 1.0 188 1.0 4.6 328 0.108 Notes (1) Pulse test: t 50 ms p (2) Surge current waveform per fig. 3 and derate per fig. 2 (3) For bidirectional types having V of 10 V and less, the I limit is doubled WM D (4) All terms and symbols are consistent with ANSI/IEEE C62.35 (5) For the bidirectional SMCJ5.0CA, the maximum V is 7.25 V BR (6) V = 3.5 V at I = 100 A (unidirectional only) F F (+) Underwriters laboratory recognition for the classification of protectors (QVGQ2) under the UL standard for safety 497B and file number E136766 for both uni-directional and bi-directional devices Revision: 30-Jun-2021 Document Number: 88394 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
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