X-On Electronics has gained recognition as a prominent supplier of SMCJ6.5CA7T ESD Suppressors / TVS Diodes across the USA, India, Europe, Australia, and various other global locations. SMCJ6.5CA7T ESD Suppressors / TVS Diodes are a product manufactured by Vishay. We provide cost-effective solutions for ESD Suppressors / TVS Diodes, ensuring timely deliveries around the world.

SMCJ6.5CA7T Vishay

SMCJ6.5CA7T electronic component of Vishay
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Part No.SMCJ6.5CA7T
Manufacturer: Vishay
Category: ESD Suppressors / TVS Diodes
Description: Diode TVS Single Bi-Dir 6.5V 1.5KW 2-Pin SMC T/R
Datasheet: SMCJ6.5CA7T Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
850: USD 0.5361 ea
Line Total: USD 455.68 
Availability - 1649
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ: 850  Multiples: 850
Pack Size: 850
Availability Price Quantity
1649
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 850
Multiples : 850
850 : USD 0.5361

1649
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 850
Multiples : 850
850 : USD 0.5361

   
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We are delighted to provide the SMCJ6.5CA7T from our ESD Suppressors / TVS Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SMCJ6.5CA7T and other electronic components in the ESD Suppressors / TVS Diodes category and beyond.

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SMCJ5.0A thru SMCJ188CA www.vishay.com Vishay General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES Low profile package Ideal for automated placement Glass passivated chip junction Available in uni-directional and bi-directional Excellent clamping capability Very fast response time Low incremental surge resistance DO-214AB (SMC) Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C Material categorization: For definitions of compliance PRIMARY CHARACTERISTICS please see www.vishay.com/doc 99912 V uni-directional 6.40 V to 209 V BR TYPICAL APPLICATIONS V bi-directional 6.40 V to 209 V BR Use in sensitive electronics protection against voltage V 5.0 V to 170 V WM transients induced by inductive load switching and lighting P 1500 W PPM on ICs, MOSFET, signal lines of sensor units for consumer, I (uni-directional only) 200 A FSM computer, industrial, and telecommunication. T max. 150 C J MECHANICAL DATA Polarity Uni-directional, bi-directional Case: DO-214AB (SMCJ) Package DO-214AB (SMCJ) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade DEVICES FOR BI-DIRECTION APPLICATIONS Terminals: Matte tin plated leads, solderable per For bi-directional use CA suffix (e.g. SMCJ188CA). J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 2 whisker test Electrical characteristics apply in both directions. Polarity: Color band denotes cathode end MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VALUE UNIT (1)(2) Peak pulse power dissipation with a 10/1000 s waveform (fig. 1) P 1500 W PPM (1) Peak pulse current with a 10/1000 s waveform I See next table A PPM (2) Peak forward surge current 8.3 ms single half sine-wave uni-directional only I 200 A FSM Power dissipation on infinite heatsink, T = 50 C P 6.5 W A D Operating junction and storage temperature range T , T - 55 to + 150 C J STG Notes (1) Non-repetitive current pulse, per fig. 3 and derated above T = 25 C per fig. 2 A (2) Mounted on 0.31 x 0.31 (8.0 mm x 8.0 mm) copper pads to each terminal Revision: 10-Dec-13 Document Number: 89331 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SMCJ5.0A thru SMCJ188CA www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A BREAKDOWN MAXIMUM MAXIMUM MAXIMUM TEST STAND-OFF DEVICE MARKING VOLTAGE DEVICE TYPE REVERSE PEAK PULSE CLAMPING CURRENT VOLTAGE (1) CODE V AT I BR T MODIFIED LEAKAGE SURGE VOLTAGE AT I V T WM (V) J BEND LEAD AT V CURRENT I WM PPM (mA) (V) (3) (2) I (A) I (A) V (V) UNI BI MIN. MAX. D PPM C (5) (+)SMCJ5.0A GDE GDE 6.40 7.07 10 5.0 800 163.0 9.2 (+)SMCJ6.0A GDG GDG 6.67 7.37 10 6.0 800 145.6 10.3 (+)SMCJ6.5A GDK BDK 7.22 7.98 10 6.5 500 133.9 11.2 (+)SMCJ7.0A GDM GDM 7.78 8.60 10 7.0 200 125.0 12.0 (+)SMCJ7.5A GDP BDP 8.33 9.21 1.0 7.5 100 116.3 12.9 (+)SMCJ8.0A GDR BDR 8.89 9.83 1.0 8.0 50 110.3 13.6 (+)SMCJ8.5A GDT BDT 9.44 10.4 1.0 8.5 20 104.2 14.4 (+)SMCJ9.0A GDV BDV 10.0 11.1 1.0 9.0 10 97.4 15.4 (+)SMCJ10A GDX BDX 11.1 12.3 1.0 10 5.0 88.2 17.0 (+)SMCJ11A GDZ GDZ 12.2 13.5 1.0 11 5.0 82.4 18.2 (+)SMCJ12A GEE BEE 13.3 14.7 1.0 12 5.0 75.4 19.9 (+)SMCJ13A GEG GEG 14.4 15.9 1.0 13 1.0 69.8 21.5 (+)SMCJ14A GEK BEK 15.6 17.2 1.0 14 1.0 64.7 23.2 (+)SMCJ15A GEM BEM 16.7 18.5 1.0 15 1.0 61.5 24.4 (+)SMCJ16A GEP GEM 17.8 19.7 1.0 16 1.0 57.7 26.0 (+)SMCJ17A GER GER 18.9 20.9 1.0 17 1.0 54.3 27.6 (+)SMCJ18A GET BET 20.0 22.1 1.0 18 1.0 51.4 29.2 (+)SMCJ20A GEV BEV 22.2 24.5 1.0 20 1.0 46.3 32.4 (+)SMCJ22A GEX BEX 24.4 26.9 1.0 22 1.0 42.3 35.5 (+)SMCJ24A GEZ BEZ 26.7 29.5 1.0 24 1.0 38.6 38.9 (+)SMCJ26A GFE BFE 28.9 31.9 1.0 26 1.0 35.6 42.1 (+)SMCJ28A GFG GFG 31.1 34.4 1.0 28 1.0 33.0 45.4 (+)SMCJ30A GFK BFK 33.3 36.8 1.0 30 1.0 31.0 48.4 (+)SMCJ33A GFM BFM 36.7 40.6 1.0 33 1.0 28.1 53.3 (+)SMCJ36A GFP BFP 40.0 44.2 1.0 36 1.0 25.8 58.1 (+)SMCJ40A GFR BFR 44.4 49.1 1.0 40 1.0 23.3 64.5 (+)SMCJ43A GFT BFT 47.8 52.8 1.0 43 1.0 21.6 69.4 (+)SMCJ45A GFV GFV 50.0 55.3 1.0 45 1.0 20.6 72.7 (+)SMCJ48A GFX GFX 53.3 58.9 1.0 48 1.0 19.4 77.4 (+)SMCJ51A GFZ GFZ 56.7 62.7 1.0 51 1.0 18.2 82.4 (+)SMCJ54A GGE GGE 60.0 66.3 1.0 54 1.0 17.2 87.1 (+)SMCJ58A GGG GGG 64.4 71.2 1.0 58 1.0 16.0 93.6 (+)SMCJ60A GGK GGK 66.7 73.7 1.0 60 1.0 15.5 96.8 (+)SMCJ64A GGM GGM 71.1 78.6 1.0 64 1.0 14.6 103 (+)SMCJ70A GGP GGP 77.8 86.0 1.0 70 1.0 13.3 113 (+)SMCJ75A GGR GGR 83.3 92.1 1.0 75 1.0 12.4 121 (+)SMCJ78A GGT GGT 86.7 95.8 1.0 78 1.0 11.9 126 (+)SMCJ85A GGV GGV 94.4 104 1.0 85 1.0 10.9 137 (+)SMCJ90A GGX GGX 100 111 1.0 90 1.0 10.3 146 (+)SMCJ100A GGZ GGZ 111 123 1.0 100 1.0 9.3 162 (+)SMCJ110A GHE GHE 122 135 1.0 110 1.0 8.5 177 (+)SMCJ120A GHG GHG 133 147 1.0 120 1.0 7.8 193 (+)SMCJ130A GHK GHK 144 159 1.0 130 1.0 7.2 209 (+)SMCJ150A GHM GHM 167 185 1.0 150 1.0 6.2 243 (+)SMCJ160A GHP GHP 178 197 1.0 160 1.0 5.8 259 (+)SMCJ170A GHR GHR 189 209 1.0 170 1.0 5.5 275 Notes (1) Pulse test: t 50 ms p (2) Surge current waveform per fig. 3 and derate per fig. 2 (3) For bi-directional types having V of 10 V and less, the I limit is doubled WM D (4) All terms and symbols are consistent with ANSI/IEEE C62.35 (5) For the bi-directional SMCJ5.0CA, the maximum V is 7.25 V BR (6) V = 3.5 V at I = 25 A (uni-directional only) F F (+) Underwriters laboratory recognition for the classification of protectors (QVGQ2) under the UL standard for safety 497B and file number E136766 for both uni-directional and bi-directional devices Revision: 10-Dec-13 Document Number: 89331 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
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