SS10PH45HM3_A/I Vishay

333 3 SS10PH45 www.vishay.com Vishay General Semiconductor High Current Density Surface-Mount Schottky Rectifier FEATURES eSMP Series Available Very low profile - typical height of 1.1 mm Ideal for automated placement K Guardring for overvoltage protection High barrier technology, T = 175 C maximum J 1 Low leakage current 2 Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C SMPC (TO-277A) AEC-Q101 qualified available - Automotive ordering code: base P/NHM3 K Anode 1 Material categorization: for definitions of compliance Anode 2 Cathode please see www.vishay.com/doc 99912 TYPICAL APPLICATIONS LINKS TO ADDITIONAL RESOURCES For use in high frequency rectifier of switching mode powe r supplies, freewheeling diodes, DC/DC converters, or 3D Models polarity protection application. MECHANICAL DATA PRIMARY CHARACTERISTICS Case: SMPC (TO-277A) I 10 A F(AV) Molding compound meets UL 94 V-0 flammability rating V 45 V RRM Base P/N-M3 - halogen-free, RoHS-compliant, and I 200 A FSM commercial grade E 20 mJ Base P/NHM3 X - halogen-free, RoHS-compliant and AS AEC-Q101 qualified V at I = 10 A 0.56 V F F ( X denotes revision code e.g. A, B,.....) I 5.5 A R Terminals: matte tin plated leads, solderable per T max. 175 C J J-STD-002 and JESD 22-B102 Package SMPC (TO-277A) M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix Circuit configuration Single meets JESD 201 class 2 whisker test MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL SS10PH45 UNIT Device marking code 10H45 Maximum repetitive peak reverse voltage V 45 V RRM Maximum average forward rectified current (fig. 1) I 10 A F(AV) Peak forward surge current 10 ms single half sine-wave I 200 A FSM superimposed on rated load Non-repetitive avalanche energy at I = 2 A , T = 25 C E 20 mJ AS J AS Operating junction and storage temperature range T , T -55 to +175 C J STG Revision: 24-Apr-2020 Document Number: 89057 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD D SS10PH45 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT I = 5 A 0.54 - F T = 25 C A I = 10 A 0.64 0.72 F (1) Instantaneous forward voltage V V F I = 5 A 0.45 - F T = 125 C A = 10 A 0.56 0.64 I F T = 25 C 5.5 80 A A (2) Reverse current Rated V I R R T = 125 C 3.9 10 mA A Typical junction capacitance 4.0 V, 1 MHz C 400 - pF J Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise specified) A PARAMETER SYMBOL SS10PH45 UNIT (1) R 60 JA Typical thermal resistance per diode C/W R 3 JL Note (1) Units mounted on recommended PCB 1 oz. pad layout ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE SS10PH45-M3/86A 0.10 86A 1500 7 diameter plastic tape and reel SS10PH45-M3/87A 0.10 87A 6500 13 diameter plastic tape and reel (1) SS10PH45HM3 A/H 0.10 H 1500 7 diameter plastic tape and reel (1) SS10PH45HM3 A/I 0.10 I 6500 13 diameter plastic tape and reel Note (1) AEC-Q101 qualified Revision: 24-Apr-2020 Document Number: 89057 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000