333 3 SS1FH10 www.vishay.com Vishay General Semiconductor Surface-Mount Schottky Barrier Rectifier FEATURES Available eSMP Series Low profile package Ideal for automated placement Low forward voltage drop, low power losses Low leakage current Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C Top view Bottom view Wave and reflow solderable SMF (DO-219AB) AEC-Q101 qualified available - Automotive ordering code: base P/NHM3 Cathode Anode Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 ADDITIONAL RESOURCES TYPICAL APPLICATIONS For use in high frequency inverters, freewheeling, DC/DC 3D Models converters, and polarity protection in commercial, industrial, and automotive applications. PRIMARY CHARACTERISTICS MECHANICAL DATA I 1.0 A F(AV) Case: SMF (DO-219AB) V 100 V RRM Molding compound meets UL 94 V-0 flammability rating I 40 A FSM Base P/N-M3 - halogen-free, RoHS-compliant Base P/NHM3 - halogen-free, RoHS-compliant, and V at I = 1.0 A (T = 125 C) 0.57 V F F A AEC-Q101 qualified T max. 175 C J Terminals: matte tin plated leads, solderable per Package SMF (DO-219AB) J-STD-002 and JESD 22-B102 Circuit configuration Single M3 and HM3 suffix meets JESD 201 class 2 whisker test Polarity: color band denotes the cathode end MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL SS1FH10 UNIT Device marking code 110 Maximum repetitive peak reverse voltage V 100 V RRM (1) Maximum average forward rectified current (fig. 1) I 1.0 A F(AV) Non-repetitive peak forward surge current 8.3 ms single half I 40 A FSM sine-wave at T = 25 C J (init) Operating junction and storage temperature range T , T -55 to +175 C J STG Note (1) Free air, mounted on recommended copper pad area Revision: 03-Dec-2019 Document Number: 87613 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD D SS1FH10 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT I = 0.5 A 0.65 - F T = 25 C A I = 1.0 A 0.72 0.80 F (1) Instantaneous forward voltage V V F I = 0.5 A 0.51 - F T = 125 C A = 1.0 A 0.57 0.65 I F T = 25 C -5 A (2) Reverse current V = 100 V I A R R T = 125 C 65 160 A Typical junction capacitance 4.0 V, 1 MHz C 70 - pF J Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 5 ms THERMAL CHARACTERISTICS (T = 25 c unless otherwise noted) A PARAMETER SYMBOL SS1FH10 UNIT (1)(2)(3) R 125 JA Typical thermal resistance C/W (2)(3) R 26 JM Notes (1) The heat generated must be less than the thermal conductivity from junction-to-ambient: dP /dT < 1/R D J JA (2) Device mounted on FR4 PCB, 2 oz. standard footprint (3) Thermal resistance R - junction to ambient R - junction to mount JA JM ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE SS1FH10-M3/H 0.015 H 3000 7 diameter plastic tape and reel SS1FH10-M3/I 0.015 I 10 000 13 diameter plastic tape and reel (1) SS1FH10HM3/H 0.015 H 3000 7 diameter plastic tape and reel (1) SS1FH10HM3/I 0.015 I 10 000 13 diameter plastic tape and reel Note (1) AEC-Q101 qualified Revision: 03-Dec-2019 Document Number: 87613 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000