SS2PH9-M3/85A Vishay

333 3 SS2PH9, SS2PH10 www.vishay.com Vishay General Semiconductor High Voltage Surface-Mount Schottky Barrier Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES eSMP Series Available Very low profile - typical height of 1.0 mm Ideal for automated placement Low forward voltage drop, low power losses High efficiency Low thermal resistance Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C SMP (DO-220AA) AEC-Q101 qualified available - Automotive ordering code: base P/NHM3 Cathode Anode Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 LINKS TO ADDITIONAL RESOURCES TYPICAL APPLICATIONS For use in high frequency inverters, freewheeling, DC/DC 3D Models converters, and polarity protection applications. MECHANICAL DATA PRIMARY CHARACTERISTICS Case: SMP (DO-220AA) I 2.0 A F(AV) Molding compound meets UL 94 V-0 flammability rating V 90 V, 100 V Base P/N-M3 - halogen-free, RoHS-compliant, and RRM commercial grade I 50 A FSM Base P/NHM3 X - halogen-free, RoHS-compliant, and E 11.25 mJ AS AEC-Q101 qualified V at I = 2.0 A, T = 125 C 0.62 V F F J ( X denotes revision code e.g. A, B,.....) I max. at rated V , T = 25 C 1.0 A R R J Terminals: matte tin plated leads, solderable per T max. 175 C J J-STD-002 and JESD 22-B102 Package SMP (DO-220AA) M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix Circuit configuration Single meets JESD 201 class 2 whisker test Polarity: color band denotes the cathode end MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL SS2PH9 SS2PH10 UNIT Device marking code 29 210 Maximum repetitive peak reverse voltage V 90 100 V RRM Maximum average forward rectified current (fig. 1) I 2.0 A F(AV) Peak forward surge current 8.3 ms single half sine-wave I 50 A FSM superimposed on rated load Non-repetitive avalanche energy at T 25 C, I = 1.5 A, L = 10 mH E 11.25 mJ J = AS AS Voltage rate of change (rated V ) dV/dt 10 000 V/s R Operating junction and storage temperature range T , T -55 to +175 C J STG Revision: 19-Jul-2021 Document Number: 84682 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD D SS2PH9, SS2PH10 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT T = 25 C 0.77 0.80 J (1) Maximum instantaneous forward voltage I = 2.0 A V V F F T = 125 C 0.62 0.66 J T = 25 C 0.1 1.0 J (2) Maximum reverse current at rated V I A R R T = 125 C 60 500 J Typical junction capacitance 4.0 V, 1 MHz CJ 65 - pF Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL SS2PH9SS2PH10UNIT (1) R 110 JA (1) Typical thermal resistance R 15 C/W JL (1) R 25 JC Note (1) Thermal resistance from junction to ambient and junction to lead mounted on PCB with 15 mm x 15 mm copper pad areas. R is measured JC at the top center of the body ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE SS2PH9-M3/84A 0.024 84A 3000 7 diameter plastic tape and reel SS2PH9-M3/85A 0.024 85A 10 000 13 diameter plastic tape and reel (1) SS2PH9HM3 A/H 0.024 H 3000 7 diameter plastic tape and reel (1) SS2PH9HM3 A/I 0.024 I 10 000 13 diameter plastic tape and reel Note (1) AEC-Q101 qualified Revision: 19-Jul-2021 Document Number: 84682 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000