SS8P2L-M3/86A Vishay

333 3 SS8P2L, SS8P3L www.vishay.com Vishay General Semiconductor High Current Density Surface-Mount Schottky Barrier Rectifiers FEATURES eSMP Series Available Very low profile - typical height of 1.1 mm Ideal for automated placement K Low forward voltage drop Low power loss, high efficiency 1 Low thermal resistance Meets MSL level 1, per J-STD-020, 2 LF maximum peak of 260 C AEC-Q101 qualified available SMPC (TO-277A) - Automotive ordering code: base P/NHM3 K Anode 1 Material categorization: for definitions of compliance Cathode Anode 2 please see www.vishay.com/doc 99912 TYPICAL APPLICATIONS LINKS TO ADDITIONAL RESOURCES For use in low voltage high frequency inverters, freewheeling, DC/DC converters, and polarity protection 3D Models applications. MECHANICAL DATA PRIMARY CHARACTERISTICS Case: SMPC (TO-277A) I 8.0 A F(AV) Molding compound meets UL 94 V-0 flammability rating V 20 V, 30 V RRM Base P/N-M3 - halogen-free, RoHS-compliant, and I 150 A FSM commercial grade E 20 mJ AS Base P/NHM3 X - halogen-free, RoHS-compliant and V at I = 8.0 A 0.472 V F F AEC-Q101 qualified T max. 150 C J ( X denotes revision code e.g. A, B,.....) Package SMPC (TO-277A) Terminals: matte tin plated leads, solderable per Circuit configuration Single J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix meets JESD 201 class 2 whisker test MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL SS8P2L SS8P3L UNIT Device marking code S82 S83 Maximum repetitive peak reverse voltage V 20 30 V RRM Maximum average forward rectified current (fig. 1) I 8.0 F(AV) A Peak forward surge current 10 ms single half sine-wave I 150 FSM superimposed on rated load Non-repetitive avalanche energy at I = 2 A, T = 25 C E 20 mJ AS J AS Operating junction and storage temperature range T , T -55 to +150 C J STG Revision: 24-Apr-2020 Document Number: 89001 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD D SS8P2L, SS8P3L www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL TEST CONDITIONS TYP. MAX. UNIT I = 4.0 A 0.447 - F T = 25 C A I = 8.0 A 0.533 0.57 F (1) Maximum instantaneous forward voltage V V F I = 4.0 A 0.357 - F T = 125 C A I = 8.0 A 0.472 0.49 F T = 25 C 55 200 A A Maximum reverse current I V = 30 V R (2) R T = 125 C 24 35 mA A Typical junction capacitance C 4.0 V, 1 MHz 330 - pF J Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL SS8P2L SS8P3L UNIT (1) R 60 JA Typical thermal resistance C/W R 3.5 JL Note (1) Units mounted on recommended PCB 1 oz. pad layout ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE SS8P3L-M3/86A 0.1 86A 1500 7 diameter plastic tape and reel SS8P3L-M3/87A 0.1 87A 6500 13 diameter plastic tape and reel (1) SS8P3LHM3 A/H 0.1 H 1500 7 diameter plastic tape and reel (1) SS8P3LHM3 A/I 0.1 I 6500 13 diameter plastic tape and reel Note (1) AEC-Q101 qualified Revision: 24-Apr-2020 Document Number: 89001 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000