T40HF..., T70HF..., T85HF..., T110HF... Series Vishay Semiconductors Power Rectifier Diodes (T-Modules), 40 A to 110 A FEATURES Electrically isolated base plate Types up to 1200 V RRM 3500 V isolating voltage RMS Simplified mechanical designs, rapid assembly High surge capability Large creepage distances UL E78996 approved Compliant to RoHS directive 2002/95/EC D-55 Designed and qualified for industrial level DESCRIPTION These series of T-modules use standard recovery power PRODUCT SUMMARY rectifier diodes. The semiconductors are electrically isolated I 40 A to 110 A from the metal base, allowing common heatsink and F(AV) compact assembly to be built. Type Modules - Diode, High Voltage Applications include power supplies, battery charges, welders, motor controls and general industrial current rectification. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS T40HF T70HF T85HF T110HF UNITS 40 70 85 110 A I F(AV) T 85 85 85 85 C C I 63 110 134 173 A F(RMS) 50 Hz 570 1200 1700 2000 I A FSM 60 Hz 600 1250 1800 2100 50 Hz 1630 7100 14 500 20 500 2 2 I t A s 60 Hz 1500 6450 13 500 18 600 2 2 I t 16 300 70 700 148 700 204 300 A s V 100 to 1200 V RRM T - 40 to 150 C J Document Number: 93587 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 20-May-10 DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com 1 T40HF..., T70HF..., T85HF..., T110HF... Series Power Rectifier Diodes Vishay Semiconductors (T-Modules), 40 A to 110 A ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS V , MAXIMUM REPETITIVE V , MAXIMUM NON-REPETITIVE I MAXIMUM RRM RSM RRM TYPE VOLTAGE PEAK REVERSE VOLTAGE PEAK REVERSE VOLTAGE AT T = 25 C J NUMBER CODE V V A 10 100 150 20 200 300 T40HF... 40 400 500 T70HF... 60 600 700 100 T85HF... 80 800 900 T110HF... 100 1000 1100 120 1200 1300 FORWARD CONDUCTION PARAMETER SYMBOL TEST CONDITIONS T40HFT70HFT85HFT110HFUNITS 40 70 85 110 A Maximum average forward current I 180 conduction, half sine wave F(AV) at case temperature 85 85 85 85 C Maximum RMS forward current I 63110134173A F(RMS) t = 10 ms 570 1200 1700 2000 No voltage Maximum peak, one-cycle reapplied t = 8.3 ms 600 1250 1800 2100 forward, non-repetitive I A FSM t = 10 ms 480 1000 1450 1700 100 % V surge current RRM Sinusoidal reapplied t = 8.3 ms 500 1050 1500 1780 half wave, initial T = J t = 10 ms 1630 7100 14 500 20 500 No voltage T maximum J reapplied t = 8.3 ms 1500 6450 13 500 18 600 2 2 2 Maximum I t for fusing I t A s t = 10 ms 1150 5000 10 500 14 500 100 % V RRM reapplied t = 8.3 ms 1050 4570 9600 13 200 2 2 2 Maximum I t for fusing I t t = 0.1 ms to 10 ms, no voltage reapplied 16 300 70 700 148 700 204 300 A s Low level value of (16.7 % x x I < I < x I ), F(AV) F(AV) V 0.66 0.76 0.68 0.68 F(TO)1 threshold voltage T maximum J V High level value of V (I > x I ), T maximum 0.84 0.95 0.90 0.86 F(TO)2 F(AV) J threshold voltage Low level value of (16.7 % x x I < I < x I ), F(AV) F(AV) r 4.3 2.4 1.76 1.56 f1 forward slope resistance T maximum J m High level value of r (I > x I ), T maximum 3.1 1.7 1.08 1.12 f2 F(AV) J forward slope resistance I = x I , T = 25 C, FM F(AV) J Maximum forward voltage drop V t = 400 s square pulse 1.30 1.35 1.27 1.35 V FM p 2 Average power = V x I + r x (I ) F(TO) F(AV) f F(RMS) www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 93587 2 DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com Revision: 20-May-10