TCET1100, TCET1100G Vishay Semiconductors Optocoupler, Phototransistor Output, High Temperature FEATURES C E High common mode rejection 4 3 Low temperature coefficient of CTR CTR offered in 9 groups Reinforced isolation provides circuit protection against electrical shock (safety class II) 12 Isolation materials according to UL 94 V-O AC Pollution degree 2 (DIN/VDE 0110/resp. IEC 60664) V DE C Climatic classification 55/100/21 (IEC 60068 part 1) 17197 5 Rated impulse voltage (transient overvoltage) 17197 4 V = 6 kV IOTM peak Isolation test voltage (partial discharge test voltage) V = 1.6 kV DESCRIPTION pd The TCET110. consists of a phototransistor optically coupled Rated isolation voltage (RMS includes DC) to a gallium arsenide infrared-emitting diode in a 4-lead V = 600 V IOWM RMS plastic dual inline package. Rated recurring peak voltage (repetitive) V = 848 V IORM peak AGENCY APPROVALS Creepage current resistance according to VDE 0303/ UL1577, file no. E52744, double protection IEC 60112 comparative tracking index: CTI 175 cUL tested, file A52744 Compliant to RoHS directive 2002/95/EC and in BSI: EN 60065:2002, EN 60950:2000 accordance to WEEE 2002/96/EC DIN EN 60747-5-5 (VDE 0884) APPLICATIONS FIMKO Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation): for appl. class I - IV at mains voltage 300 V for appl. class I - III at mains voltage 600 V according to DIN EN 60747-5-5 (VDE 0884), suitable for: - Switch-mode power supplies - Line receiver - Computer peripheral interface - Microprocessor system interface www.vishay.com For technical questions, contact: optocoupleranswers vishay.com Document Number: 83503 810 Rev. 2.3, 14-Oct-09 TCET1100, TCET1100G Optocoupler, Phototransistor Output, Vishay Semiconductors High Temperature ORDER INFORMATION PART REMARKS TCET1100 CTR 50 % to 600 %, DIP-4 TCET1101 CTR 40 % to 80 %, DIP-4 TCET1102 CTR 63 % to 125 %, DIP-4 TCET1103 CTR 100 % to 200 %, DIP-4 TCET1104 CTR 160 % to 320 %, DIP-4 TCET1105 CTR 50 % to 150 %, DIP-4 TCET1106 CTR 100 % to 300 %, DIP-4 TCET1107 CTR 80 % to 160 %, DIP-4 TCET1108 CTR 130 % to 260 %, DIP-4 TCET1109 CTR 200 % to 400 %, DIP-4 TCET1100G CTR 50 % to 600 %, DIP-4, 400 mil TCET1101G CTR 40 % to 80 %, DIP-4, 400 mil TCET1102G CTR 63 % to 125 %, DIP-4, 400 mil TCET1103G CTR 100 % to 200 %, DIP-4, 400 mil TCET1104G CTR 160 % to 320 %, DIP-4, 400 mil TCET1105G CTR 50 % to 150 %, DIP-4, 400 mil TCET1106G CTR 100 % to 300 %, DIP-4, 400 mil TCET1107G CTR 80 % to 160 %, DIP-4, 400 mil TCET1108G CTR 130 % to 260 %, DIP-4, 400 mil TCET1109G CTR 200 % to 400 %, DIP-4, 400 mil Note G = lead form 10.16 mm G is not marked on the body (1) ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage V 6V R Forward current I 60 mA F Forward surge current t 10 s I 1.5 A p FSM OUTPUT Collector emitter voltage V 70 V CEO Emitter collector voltage V 7V ECO Collector current I 50 mA C Collector peak current t /T = 0.5, t 10 ms I 100 mA p p CM COUPLER Isolation test voltage (RMS) t = 1 min V 5000 V ISO RMS Operating ambient temperature range T - 40 to + 100 C amb Storage temperature range T - 55 to + 125 C stg (2) Soldering temperature 2 mm from case, 10 s T 260 C sld Notes (1) T = 25 C, unless otherwise specified. amb Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (2) Refer to wave profile for soldering conditions for through hole devices (DIP). Document Number: 83503 For technical questions, contact: optocoupleranswers vishay.com www.vishay.com Rev. 2.3, 14-Oct-09 811