TCET2600, TCET4600 Vishay Semiconductors Optocoupler, Phototransistor Output, AC Input (Dual, Quad Channel) FEATURES Quad Channel Extra low coupling capacity - typical 0.2 pF Dual Channel High common mode rejection Low temperature coefficient of CTR Rated impulse voltage (transient overvoltage) V = 10 kV peak IOTM Isolation test voltage (partial discharge test voltage) V = 1.6 kV peak pd i179012-2 Rated isolation voltage (RMS includes DC) CE V = 600 V IOWM RMS Rated recurring peak voltage (repetitive) V = 848 V IORM peak Thickness though insulation 0.4 mm Creepage current resistance according to VDE 0303/ 1 IEC 60112 comparative tracking index: CTI 175 AC 8 PIN Compliant to RoHS Directive to 2002/95/EC and in 16 PIN accordance WEEE 2002/96/EC 17196 1 V DE C AGENCY APPROVALS UL1577, file no. E52744 system code H, double protection DESCRIPTION CSA 22.2 bulletin 5A, double protection The TCET2600, TCET4600 consists of a phototransistor DIN EN 60747-5-2 (VDE 0884) optically coupled to 2 gallium arsenide infrared-emitting DIN EN 60747-5-5 (pending) diodes in 8 pin or 16 lead plastic dual inline package. FIMKO ORDERING INFORMATION DIP T C E T 600 PART NUMBER 7.62 mm CTR (%) AGENCY CERTIFIED/ PACKAGE 5 mA UL, cUL, VDE, FIMKO 20 to 300 DIP-8, dual channel TCET2600 DIP-16, quad channel TCET4600 (1) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage V 6V R Forward current I 60 mA F Forward surge current t 10 s I 1.5 A p FSM Power dissipation P 100 mW diss Junction temperature T 125 C j Document Number: 83726 For technical questions, contact: optocoupleranswers vishay.com www.vishay.com Rev. 1.6, 10-Dec-10 1 TCET2600, TCET4600 Optocoupler, Phototransistor Output, Vishay Semiconductors AC Input (Dual, Quad Channel) (1) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT OUTPUT Collector emitter voltage V 70 V CEO Emitter collector voltage V 7V ECO Collector current I 50 mA C Collector peak current t /T = 0.5, t 10 ms I 100 mA p p CM Power dissipation P 150 mW diss Junction temperature T 125 C j COUPLER Isolation test voltage (RMS) t = 1 s V 5300 V ISO RMS Isolation voltage V 890 V IORM P Total power dissipation P 250 mW tot Operating ambient temperature range T - 55 to + 100 C amb Storage temperature range T - 55 to + 150 C stg (2) Soldering temperature 2 mm from case, t 10 s T 260 C sld Notes (1) Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. (2) Refer to wave profile for soldering conditions for through hole devices. ELECTRICAL CHARACTERISTCS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage I = 50 mA V 1.25 1.6 V F F Junction capacitance V = 0 V, f = 1 MHz C 50 pF R j OUTPUT Collector emitter voltage I = 100 A V 70 V C CEO Emitter collector voltage I = 100 A V7V E ECO V = 20 V, I = 0 A, CE F Collector dark current I 100 nA CEO E = 0 COUPLER Collector emitter saturation voltage I = 10 mA, I = 1 mA V 0.3 V F C CEsat V = 5 V, I = 10 mA, CE F Cut-off frequency f 100 kHz c R = 100 L Coupling capacitance f = 1 MHz C 0.3 pF k Note Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering evaluations. Typical values are for information only and are not part of the testing requirements. CURRENT TRANSFER RATIO PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT I /I V = 5 V, I = 5 mA CTR 20 300 % C F CE F www.vishay.com For technical questions, contact: optocoupleranswers vishay.com Document Number: 83726 2 Rev. 1.6, 10-Dec-10