TCST2103, TCST2202, TCST2300 Vishay Semiconductors Transmissive Optical Sensor with Phototransistor Output FEATURES Package type: leaded Top view Detector type: phototransistor + D Dimensions (L x W x H in mm): 24.5 x 6.3 x 10.8 Gap (in mm): 3.1 E + Typical output current under test: I = 4 mA C 0.3 (TCST2103) 7.6 mm 19180 3 Typical output current under test: I = 2 mA (TCST2202) C 19180 4 Typical output current under test: I = 0.5 mA (TCST2300) C Daylight blocking filter DESCRIPTION Emitter wavelength: 950 nm The TCST2103, TCST2202, and TCST2300 are Lead (Pb)-free soldering released transmissive sensors that include an infrared emitter and phototransistor, located face-to-face on the optical axes in a Compliant to RoHS directive 2002/95/EC and in leaded package which blocks visible light. These part accordance to WEEE 2002/96/EC numbers include options for aperture width. APPLICATIONS Optical switch Photo interrupter Counter Encoder PRODUCT SUMMARY TYPICAL OUTPUT CURRENT DAYLIGHT (1) PART NUMBER GAP WIDTH APERTURE WIDTH UNDER TEST BLOCKING FILTER (mm) (mm) (mA) INTEGRATED TCST2103 3.1 1 4 Yes TCST2202 3.1 0.5 2 Yes TCST2300 3.1 0.25 0.5 Yes Note (1) Conditions like in table basic characteristics/coupler ORDERING INFORMATION (1) ORDERING CODE PACKAGING VOLUME REMARKS TCST2103 Tube MOQ: 1020 pcs, 85 pcs/tube With mounting flange TCST2202 Tube MOQ: 1020 pcs, 85 pcs/tube With mounting flange TCST2300 Tube MOQ: 1020 pcs, 85 pcs/tube With mounting flange Note (1) MOQ: minimum order quantity (1) ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT COUPLER Total power dissipation T 25 C P 250 mW amb tot Ambient temperature range T - 55 to + 85 C amb Storage temperature range T - 55 to + 100 C stg Soldering temperature Distance to package: 2 mm t 5 s T 260 C sd Document Number: 81147 For technical questions, contact: sensorstechsupport vishay.com www.vishay.com Rev. 1.0, 17-Aug-09 1 TCST2103, TCST2202, TCST2300 Transmissive Optical Sensor with Vishay Semiconductors Phototransistor Output (1) ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT (EMITTER) Reverse voltage V 6V R Forward current I 60 mA F Forward surge current t 10 s I 3A p FSM Power dissipation T 25 C P 100 mW amb V Junction temperature T 100 C j OUTPUT (DETECTOR) Collector emitter voltage V 70 V CEO Emitter collector voltage V 7V ECO Collector peak current t /T = 0.5, t 10 ms I 200 mA p p CM Power dissipation T 25 C P 150 mW amb V Junction temperature T 100 C j Note (1) T = 25 C, unless otherwise specified amb ABSOLUTE MAXIMUM RATINGS 400 300 Coupled device 200 Phototransistor IR-diode 100 0 0 30 60 90 120 150 T - Ambient Temperature (C) 95 11088 amb Fig. 1 - Power Dissipation Limit vs. Ambient Temperature (1) BASIC CHARACTERISTICS PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT COUPLER TCST2103 CTR 10 20 % Current transfer ratio V = 5 V, I = 20 mA TCST2202 CTR 5 10 % CE F TCST2300 CTR 1.25 2.5 % TCST2103 I 24 mA C Collector current V = 5 V, I = 20 mA TCST2202 I 12 mA CE F C TCST2300 I 0.25 0.5 mA C I = 20 mA, I = 1 mA TCST2103 V 0.4 V F C CEsat Collector emitter saturation I = 20 mA, I = 0.5 mA TCST2202 V 0.4 V F C CEsat voltage I = 20 mA, I = 0.1 mA TCST2300 V 0.4 V F C CEsat TCST2103 s 0.6 mm Resolution, path of the shutter crossing the radiant sensitive I = 10 % to 90 % TCST2202 s 0.4 mm Crel zone TCST2300 s 0.2 mm www.vishay.com For technical questions, contact: sensorstechsupport vishay.com Document Number: 81147 2 Rev. 1.0, 17-Aug-09 P - Power Dissipation (mW)