X-On Electronics has gained recognition as a prominent supplier of TGL41-51A-E396 ESD Suppressors / TVS Diodes across the USA, India, Europe, Australia, and various other global locations. TGL41-51A-E396 ESD Suppressors / TVS Diodes are a product manufactured by Vishay. We provide cost-effective solutions for ESD Suppressors / TVS Diodes, ensuring timely deliveries around the world.

TGL41-51A-E396 Vishay

TGL41-51A-E396 electronic component of Vishay
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Part No.TGL41-51A-E396
Manufacturer: Vishay
Category: ESD Suppressors / TVS Diodes
Description: Vishay Semiconductors TVS Diodes - Transient Voltage Suppressors 400W 51V Unidirect
Datasheet: TGL41-51A-E396 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.583 ea
Line Total: USD 0.58 
Availability - 1493
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1493
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 1
Multiples : 1
1 : USD 0.583
10 : USD 0.4994
100 : USD 0.3476
500 : USD 0.2706
1000 : USD 0.22
1500 : USD 0.1881
9000 : USD 0.165

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Polarity
Termination Style
Breakdown Voltage
Working Voltage
Clamping Voltage
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Peak Surge Current
Length
Operating Temperature Range
Width
Brand
Mounting Style
Pd - Power Dissipation
Factory Pack Quantity :
Tradename
Cnhts
Hts Code
Mxhts
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the TGL41-51A-E396 from our ESD Suppressors / TVS Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TGL41-51A-E396 and other electronic components in the ESD Suppressors / TVS Diodes category and beyond.

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TGL41-6.8A thru TGL41-200A www.vishay.com Vishay General Semiconductor TRANSZorb Transient Voltage Suppressors FEATURES Plastic MELF package Ideal for automated placement Glass passivated pallet chip junction Available in uni-directional polarity only 400 W peak pulse power capability with a 10/1000 s waveform, repetitive rate (duty cycle): 0.01 % Excellent clamping capability Very fast response time Low incremental surge resistance Meets MSL level 1, per J-STD-020, LF maximum peak GL41 (DO-213AB) of 250 C Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 TYPICAL APPLICATIONS Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting PRIMARY CHARACTERISTICS on ICs, MOSFET, signal lines of sensor units for consumer, V uni-directional 6.45 V to 210 V computer, industrial, and telecommunication. BR V 5.8 V to 171 V WM MECHANICAL DATA P 400 W, 200 W PPM Case: GL41 (DO-213AB) P 1.0 W D Molding compound meets UL 94 V-0 flammability rating I 40 A FSM Base P/N-E3 - RoHS compliant, commercial grade T max. 150 C J Terminals: matte tin plated leads, solderable per Polarity Uni-directional J-STD-002 and JESD 22-B102 Package GL41 (DO-213AB) E3 suffix meets JESD 201 class 1A whisker test Polarity: blue band denotes the cathode which is positive with respect to the anode under normal TVS operation MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VALUE UNIT (1) Peak pulse power dissipation with a 10/1000 s waveform (fig. 1) P 400 W PPM Power dissipation on infinite heatsink at T = 75 C P 1.0 W L D (1) Peak pulse current with a 10/1000 s waveform (fig. 3) I See next table A PPM (2) Peak forward surge current, 8.3 ms half sine-wave uni-directional only I 40 A FSM Maximum instantaneous forward voltage at 25 A for uni-directional only V 3.5 V F Operating junction and storage temperature range T , T -55 to +150 C J STG Notes (1) Non-repetitive current pulse, per fig. 3 and derated above T = 25 C per fig. 2. Rating is 200 W above 91 V A (2) Measured at 8.3 ms single half sine-wave or equivalent square wave duty cycle = 4 pulses per minute maximum Revision: 16-Jan-18 Document Number: 88403 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 TGL41-6.8A thru TGL41-200A www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A BREAKDOWN MAXIMUM MAXIMUM MAXIMUM MAXIMUM VOLTAGE TEST STAND-OFF PEAK REVERSE CLAMPING TEMPERATURE (1) DEVICE V CURRENT VOLTAGE PULSE BR LEAKAGE VOLTAGE COEFFICIENT TYPE (V) I V CURRENT T WM AT V I AT I OF V WM D PPM BR (2) (mA) (V) I PPM (A) V (V) (%/C) MIN. MAX. C (A) TGL41-6.8A 6.45 7.14 10 5.80 1000 38.1 10.5 0.060 TGL41-7.5A 7.13 7.88 10 6.40 500 35.4 11.3 0.064 TGL41-8.2A 7.79 8.61 10 7.02 200 33.1 12.1 0.068 TGL41-9.1A 8.65 9.55 1.0 7.78 50.0 29.9 13.4 0.071 TGL41-10A 9.5 10.5 1.0 8.55 10.0 27.6 14.5 0.076 TGL41-11A 10.5 11.6 1.0 9.40 5.0 25.6 15.6 0.078 TGL41-12A 11.4 12.6 1.0 10.2 5.0 24.0 16.7 0.081 TGL41-13A 12.4 13.7 1.0 11.1 5.0 22.0 18.2 0.084 TGL41-15A 14.3 15.8 1.0 12.8 5.0 18.9 21.2 0.087 TGL41-16A 15.2 16.8 1.0 13.6 5.0 17.8 22.5 0.089 TGL41-18A 17.1 18.9 1.0 15.3 5.0 15.9 25.2 0.091 TGL41-20A 19.0 21.0 1.0 17.1 5.0 14.4 27.7 0.093 TGL41-22A 20.9 23.1 1.0 18.8 5.0 13.1 30.6 0.095 TGL41-24A 22.8 25.2 1.0 20.5 5.0 12.0 33.2 0.097 TGL41-27A 25.7 28.4 1.0 23.1 5.0 10.7 37.5 0.099 TGL41-30A 28.5 31.5 1.0 25.6 5.0 9.7 41.4 0.100 TGL41-33A 31.4 34.7 1.0 28.2 5.0 8.8 45.7 0.101 TGL41-36A 34.2 37.8 1.0 30.8 5.0 8.0 49.9 0.102 TGL41-39A 37.1 41.0 1.0 33.3 5.0 7.4 53.9 0.103 TGL41-43A 40.9 45.2 1.0 36.8 5.0 6.7 59.3 0.104 TGL41-47A 44.7 49.4 1.0 40.2 5.0 6.2 64.8 0.104 TGL41-51A 48.5 53.6 1.0 43.6 5.0 5.7 70.1 0.105 TGL41-56A 53.2 58.8 1.0 47.8 5.0 5.2 77.0 0.106 TGL41-62A 58.9 65.1 1.0 53.0 5.0 4.7 85.0 0.107 TGL41-68A 64.6 71.4 1.0 58.1 5.0 4.3 92.0 0.107 TGL41-75A 71.3 78.8 1.0 64.1 5.0 3.9 103 0.108 TGL41-82A 77.9 86.1 1.0 70.1 5.0 3.5 113 0.108 TGL41-91A 86.5 95.5 1.0 77.8 5.0 3.2 125 0.109 TGL41-100A 95.0 105 1.0 85.5 5.0 1.46 137 0.109 TGL41-110A 105 116 1.0 94.0 5.0 1.32 152 0.110 TGL41-120A 114 126 1.0 102 5.0 1.21 165 0.110 TGL41-130A 124 137 1.0 111 5.0 1.12 179 0.110 TGL41-150A 143 158 1.0 128 5.0 0.97 207 0.111 TGL41-160A 152 168 1.0 136 5.0 0.91 219 0.111 TGL41-170A 162 179 1.0 145 5.0 0.85 234 0.111 TGL41-180A 171 189 1.0 154 5.0 0.81 246 0.111 TGL41-200A 190 210 1.0 171 5.0 0.73 274 0.111 Notes (1) Pulse test: t 50 ms p (2) Surge current waveform per fig. 3 and derate per fig. 2 (2) All terms and symbols are consistent with ANSI/IEEE C62.35 ORDERING INFORMATION (Example) PREFERRED PIN UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE TGL41-6.8A-E3/96 0.134 96 1500 7 diameter plastic tape and reel TGL41-6.8A-E3/97 0.134 97 5000 13 diameter plastic tape and reel Revision: 16-Jan-18 Document Number: 88403 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
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