TLSV5100 Vishay Semiconductors Bicolor Symbol LED in 2.5 x 5 mm Untinted Top-Diffused Package FEATURES Even luminance of the emitting surface Ideal as flush mounted panel indicators For DC and pulse operation e4 Color mixing possible due to separate anode terminals Luminous intensity selected into groups Categorized for green color 9611496 Wide viewing angle Common cathode PRODUCT GROUP AND PACKAGE DATA Lead (Pb)-free component Product group: LED Component in accordance to RoHS 2002/95/EC Package: symbol and WEEE 2002/96/EC Product series: bicolor Angle of half intensity: 50 APPLICATIONS Indicating and illumination purposes PARTS TABLE PART COLOR, LUMINOUS INTENSITY TECHNOLOGY TLSV5100 Green/red, I > 0.63 mcd GaP on GaP V 1) ABSOLUTE MAXIMUM RATINGS TLSV5100 PARAMETER TEST CONDITION SYMBOL VALUE UNIT V 6V Reverse voltage per diode R I 30 mA DC Forward current per diode F Surge forward current per diode t 10 sI 1A p FSM T 55 C P 100 mW Power dissipation per diode amb V Total power dissipation T 55 C P 150 mW amb tot T 100 C Junction temperature j Operating temperature range T - 40 to + 100 C amb T - 55 to + 100 C Storage temperature range stg Soldering temperature t 5 s, 2 mm from body T 260 C sd Thermal resistance junction/ R 450 K/W thJA ambient per diode Thermal resistance junction/ R 300 K/W thJA ambient total Note: 1) T = 25 C, unless otherwise specified amb Document Number 83052 www.vishay.com Rev. 1.6, 18-Sep-07 1TLSV5100 Vishay Semiconductors 1) OPTICAL AND ELECTRICAL CHARACTERISTICS TLSV5100R, RED PARAMETER TEST CONDITION SYMBOL MIN TYP. MAX UNIT Per diode 2) I = 10 mA I 0.63 1 mcd Luminous intensity F V Dominant wavelength I = 10 mA 612 625 nm F d I = 10 mA Peak wavelength 635 nm F p I = 10 mA Angle of half intensity 50 deg F I = 20 mA V Forward voltage 23 V F F I = 10 AV Reverse voltage 615 V R R V = 0, f = 1 MHz C Junction capacitance 50 pF R j Note: 1) T = 25 C, unless otherwise specified amb 2) in one packing unit I /I 0.5 Vmin Vmax 1) OPTICAL AND ELECTRICAL CHARACTERISTICS TLSV5100G, GREEN PARAMETER TEST CONDITION SYMBOL MIN TYP. MAX UNIT Per diode 2) I = 10 mA I 0.63 1 mcd Luminous intensity F V I = 10 mA Dominant wavelength 562 575 nm F d Peak wavelength I = 10 mA 565 nm F p I = 10 mA Angle of half intensity 50 deg F I = 20 mA V Forward voltage 2.4 3 V F F I = 10 AV Reverse voltage 615 V R R V = 0, f = 1 MHz C Junction capacitance 50 pF R j Note: 1) T = 25 C, unless otherwise specified amb 2) in one packing unit I /I 0.5 Vmin Vmax TYPICAL CHARACTERISTICS T = 25 C, unless otherwise specified amb 125 60 50 100 40 75 30 50 20 25 10 0 0 020 40 60 80 100 020 40 60 80 100 T - Ambient Temperature (C) 95 9984 T - Ambient Temperature (C) 95 9983 amb amb Figure 1. Power Dissipation vs. Ambient Temperature Figure 2. Forward Current vs. Ambient Temperature for InGaN www.vishay.com Document Number 83052 2 Rev. 1.6, 18-Sep-07 P - Power Dissipation (mW) V I - Forward Current (mA) F