TPSMB6.8AHE3_A/H Vishay

333 3 TPSMB6.8A thru TPSMB43A www.vishay.com Vishay General Semiconductor Surface-Mount PAR Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions FEATURES Available Junction passivation optimized design passivated anisotropic rectifier technology T = 185 C capability suitable for high J reliability and automotive requirement Available in unidirectional polarity only 600 W peak pulse power capability with a Available 10/1000 s waveform, repetitive rate SMB (DO-214AA) (duty cycle): 0.01 % Cathode Anode Excellent clamping capability Very fast response time LINKS TO ADDITIONAL RESOURCES Low incremental surge resistance Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C 3D Models AEC-Q101 qualified available - Automotive ordering code: base P/NHE3 or P/NHM3 PRIMARY CHARACTERISTICS Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 V 6.8 V to 43 V BR V 5.8 V to 36.8 V WM MECHANICAL DATA P 600 W PPM Case: SMB (DO-214AA) I 75 A FSM Molding compound meets UL 94 V-0 flammability rating Base P/NHE3 X - RoHS-compliant and AEC-Q101 qualified T max. 185 C J Base P/NHM3 X - halogen-free, RoHS-compliant, and Polarity Unidirectional AEC-Q101 qualified Package SMB (DO-214AA) ( X denotes revision code e.g. A, B, ...) Terminals: matte tin plated leads, solderable per TYPICAL APPLICATIONS J-STD-002 and JESD 22-B102 HE3 and HM3 suffix meets JESD 201 class 2 whisker test Use in sensitive electronics protection against voltage Polarity: color band denotes cathode end transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial, automotive, and telecommunication. MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOLVALUEUNIT (1)(2) Peak pulse power dissipation with a 10/1000 s waveform (fig. 1) P 600 W PPM (1) Peak pulse current with a 10/1000 s waveform (fig. 3) I See table next page A PPM (2)(3) Peak forward surge current 8.3 ms single half sine-wave I 75 A FSM (2)(3) Maximum instantaneous forward voltage at 50 A V 3.5 V F Operating junction and storage temperature range T , T -65 to +185 C J STG Notes (1) Non-repetitive current pulse, per fig. 3 and derated above T = 25 C per fig. 2 A (2) Mounted on 0.2 x 0.2 (5.0 mm x 5.0 mm) copper pads at each terminal (3) Measured on 8.3 ms single half sine-wave, or equivalent square wave, duty cycle = 4 pulses per minute maximum Revision: 19-Apr-2021 Document Number: 88406 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD D TPSMB6.8A thru TPSMB43A www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise noted) A MAXIMUM TYPICAL MAXIMUM MAXIMUM MAXIMUM REVERSE TEMP. TEST STAND-OFF REVERSE PEAK PULSE CLAMPING BREAKDOWN DEVICE LEAKAGE COEFFICIENT DEVICE CURRENT VOLTAGE LEAKAGE SURGE VOLTAGE VOLTAGE MARKING AT V WM (1) (3) TYPE I V AT V CURRENT AT I OF V V AT I T WM WM PPM BR T BR CODE T = 150 C J (2) (mA) (V) I I V (V) R PPM C T I D (A) (A) (V) (%/C) (A) MIN. NOM. MAX. TPSMB6.8A KEP 6.45 6.80 7.14 10 5.8 500 1000 57.1 10.5 0.047 TPSMB7.5A KGP 7.13 7.50 7.88 10 6.4 250 500 53.1 11.3 0.052 TPSMB8.2A KKP 7.79 8.20 8.61 10 7.02 100 200 49.6 12.1 0.056 TPSMB9.1A KMP 8.65 9.10 9.55 1 7.78 25 50 44.8 13.4 0.060 TPSMB10A KPP 9.5 10.0 10.5 1 8.55 5 20 41.4 14.5 0.064 TPSMB11A KRP 10.5 11.0 11.6 1 9.4 2 5 38.5 15.6 0.067 TPSMB12A KTP 11.4 12.0 12.6 1 10.2 2 5 35.9 16.7 0.070 TPSMB13A KVP 12.4 13.0 13.7 1 11.1 2 5 33 18.2 0.072 TPSMB15A KXP 14.3 15.0 15.8 1 12.8 1 5 28.3 21.2 0.076 TPSMB16A KZP 15.2 16.0 16.8 1 13.6 1 5 26.7 22.5 0.078 TPSMB18A LEP 17.1 18.0 18.9 1 15.3 1 5 23.8 25.2 0.080 TPSMB20A LGP 19 20.0 21 1 17.1 1 5 21.7 27.7 0.082 TPSMB22A LKP 20.9 22.0 23.1 1 18.8 1 5 19.6 30.6 0.084 TPSMB24A LMP 22.8 24.0 25.2 1 20.5 1 5 18.1 33.2 0.085 TPSMB27A LPP 25.7 27.0 28.4 1 23.1 1 5 16 37.5 0.087 TPSMB30A LRP 28.5 30.0 31.5 1 25.6 1 5 14.5 41.4 0.088 TPSMB33A LTP 31.4 33.0 34.7 1 28.2 1 5 13.1 45.7 0.089 TPSMB36A LVP 34.2 36.0 37.8 1 30.8 1 5 12 49.9 0.090 TPSMB39A LXP 37.1 39.0 41.0 1 33.3 1 5 11.1 53.9 0.091 TPSMB43A LZP 40.9 43.0 45.2 1 36.8 1 5 10.1 59.3 0.092 Notes (1) V measured after I applied for 300 s, I = square wave pulse or equivalent BR T T (2) Surge current waveform per fig. 3 and derated per fig. 2 (3) To calculate V vs. junction temperature, use the following formula: V at T = V at 25 C x (1 + T x (T - 25)) BR BR J BR J (4) All terms and symbols are consistent with ANSI/IEEE C62.35 ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE (1) TPSMB6.8AHE3 A/H 0.096 H 750 7 diameter plastic tape and reel (1) TPSMB6.8AHE3 A/I 0.096 I 3200 13 diameter plastic tape and reel (1) TPSMB6.8AHM3 A/H 0.096 H 750 7 diameter plastic tape and reel (1) TPSMB6.8AHM3 A/I 0.096 I 3200 13 diameter plastic tape and reel Note (1) AEC-Q101 qualified Revision: 19-Apr-2021 Document Number: 88406 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000