333 3 V1F6 www.vishay.com Vishay General Semiconductor Surface-Mount TMBS (Trench MOS Barrier Schottky) Rectifiers FEATURES Available eSMP Series Trench MOS Schottky technology Low profile package Ideal for automated placement Low forward voltage drop, low power losses Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C Top view Bottom view Wave and reflow solderable SMF (DO-219AB) AEC-Q101 qualified available Cathode Anode - Automotive ordering code: base P/NHM3 Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 ADDITIONAL RESOURCES TYPICAL APPLICATIONS 3D Models For use in high frequency inverters, freewheeling, DC/DC converters, and polarity protection in commercial, industrial, and automotive applications. PRIMARY CHARACTERISTICS I 1.0 A F(AV) MECHANICAL DATA V 60 V RRM Case: SMF (DO-219AB) I 30 A FSM Molding compound meets UL 94 V-0 flammability rating V at I = 1 A (T = 125 C) 0.45 V Base P/N-M3 - halogen-free, RoHS-compliant F F A Base P/NHM3 - halogen-free, RoHS-compliant, and T max. 150 C J AEC-Q101 qualified Package SMF (DO-219AB) Terminals: matte tin plated leads, solderable per Circuit configuration Single J-STD-002 and JESD 22-B102 M3 and HM3 suffix meet JESD 201 class 2 whisker test Polarity: color band denotes the cathode end MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V1F6 UNIT Device marking code V16 Maximum repetitive peak reverse voltage V 60 V RRM (1) Maximum average forward rectified current (fig.1) I 1.0 A F(AV) Peak forward surge current 8.3 ms single half sine-wave I 30 A FSM superimposed on rated load (2) Operating junction temperature range T -40 to +150 J C Storage temperature range T -55 to +150 STG Notes (1) Free air, mounted on FR4 PCB, 2 oz. standard footprint (2) The heat generated must be less than the thermal conductivity from junction-to-ambient: dP /dT < 1/R D J JA Revision: 04-Dec-2019 Document Number: 87555 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD DV1F6 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT I = 0.5 A 0.45 - F T = 25 C A I = 1.0 A 0.52 0.60 F (1) Instantaneous forward voltage V V F I = 0.5 A 0.36 - F T = 125 C A I = 1.0 A 0.45 0.53 F T = 25 C -0.27 A (2) Reverse current V = 60 V I mA R R T = 125 C 1.0 5 A Typical junction capacitance 4.0 V, 1 MHz C 135 - pF J Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 5 ms THERMAL CHARACTERISTICS (T = 25 c unless otherwise noted) A PARAMETER SYMBOL V1F6 UNIT (1)(2) R 125 JA Typical thermal resistance C/W (2) R 27 JM Notes (1) The heat generated must be less than the thermal conductivity from junction-to-ambient: dP /dT <1/R D J JA (2) Device mounted on FR4 PCB, 2 oz. standard footprint, thermal resistance R junction-to-ambient thermal resistance JA R junction-to-mount JM ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE V1F6-M3/H 0.015 H 3000 7 diameter plastic tape and reel V1F6-M3/I 0.015 I 10 000 13 diameter plastic tape and reel (1) V1F6HM3/H 0.015 H 3000 7 diameter plastic tape and reel (1) V1F6HM3/I 0.015 I 10 000 13 diameter plastic tape and reel Note (1) AEC-Q101 qualified Revision: 04-Dec-2019 Document Number: 87555 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000