V1P22 www.vishay.com Vishay General Semiconductor Surface-Mount TMBS (Trench MOS Barrier Schottky) Rectifier FEATURES eSMP Series Available Very low profile - typical height of 0.65 mm Trench MOS Schottky technology Low forward voltage drop Low power loss, high efficiency Meets MSL level 1, per J-STD-020, Top View Bottom View LF maximum peak of 260 C AEC-Q101 qualified available MicroSMP (DO-219AD) - Automotive ordering code: base P/NHM3 Material categorization: for definitions of compliance Cathode Anode please see www.vishay.com/doc 99912 TYPICAL APPLICATIONS click logo to get started DESIGN SUPPORT TOOLS For use in low voltage high frequency inverters, freewheeling, DC/DC converters, and polarity protection applications, in commercial, industrial, and automotiv e Models Available applications. MECHANICAL DATA Case: MicroSMP (DO-219AD) PRIMARY CHARACTERISTICS Molding compound meets UL 94 V-0 flammability rating I 1.0 A F(AV) Base P/N-M3 - halogen-free, and RoHS-compliant V 200 V RRM Base P/NHM3 - halogen-free, RoHS-compliant, and I 25 A AEC-Q101 qualified FSM V at I = 1.0 A (125 C) 0.65 V Terminals: matte tin plated leads, solderable per F F J-STD-002 and JESD 22-B102 T max. 175 C J M3 and HM3 suffix meets JESD 201 class 2 whisker test Package MicroSMP (DO-219AD) Polarity: color band denotes the cathode end Circuit configuration Single MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V1P22 UNIT Device marking code V1D Maximum repetitive peak reverse voltage V 200 V RRM Maximum DC reverse voltage V 160 V DC (1) Maximum average forward rectified current I 1.0 A F(AV) Peak forward surge current 10 ms single half sine-wave I 25 A FSM superimposed on rated load (2) Operating junction temperature range T -40 to +175 C J Storage temperature range T -55 to +175 C STG Notes (1) Free air mounted on recommended copper pad area (2) The heat generated must be less than the thermal conductivity from junction to ambient: dP /dT < 1/R D J JA Revision: 18-Feb-2019 Document Number: 86535 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 V1P22 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT I = 0.5 A 0.74 - F T = 25 C A I = 1.0 A 0.80 0.88 F (1) Instantaneous forward voltage V V F I = 0.5 A 0.58 - F T = 125 C A I = 1.0 A 0.65 0.73 F T = 25 C 0.001 - A V = 160 V R T = 125 C 0.1 - A (2) Reverse current I mA R T = 25 C - 0.015 A V = 200 V R T = 125 C 0.2 1.0 A Typical junction capacitance 4.0 V, 1 MHz C 50.0 - pF J Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: pulse width 5 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V1P22 UNIT (1)(2) R 130 JA Typical thermal resistance C/W (3) R 20 JM Notes (1) The heat generated must be less than the thermal conductivity from junction-to-ambient: dP /dT < 1/ R D J JA (2) Free air, mounted on recommended copper pad area thermal resistance, R - junction to ambient JA (3) Mounted on recommended copper pad area thermal resistance, R - junction to mount JM ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE V1P22-M3/H 0.006 H 4500 7 diameter plastic tape and reel (1) V1P22HM3/H 0.006 H 4500 7 diameter plastic tape and reel Note (1) AEC-Q101 qualified Revision: 18-Feb-2019 Document Number: 86535 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000