V20W60C-M3 www.vishay.com Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low V = 0.40 V at I = 5 A F F FEATURES TMBS Trench MOS Schottky technology TO-252 (D-PAK) Ideal for automated placement Low forward voltage drop, low power losses K High efficiency operation Meets MSL level 1, per J-STD-020, LF maximum peak A of 260 C Material categorization: For definitions of compliance please see www.vishay.com/doc 99912 A V20W60C TYPICAL APPLICATIONS A K For use in high frequency DC/DC converters, switching A HEATSINK power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. MECHANICAL DATA PRIMARY CHARACTERISTICS Case: TO-252 (D-PAK) I 2 x 10 A F(AV) Molding compound meets UL 94 V-0 flammability rating V 60 V RRM Base P/N-M3 - halogen-free, RoHS-compliant, and I 100 A commercial grade FSM V at I = 10 A (T = 125 C) 0.51 V Terminals: Matte tin plated leads, solderable per F F A J-STD-002 and JESD 22-B102 T max. 150 C J M3 suffix meets JESD 201 class 1A whisker test Package TO-252 (D-PAK) Polarity: As marked Diode variation Dual common cathode MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V20W60C UNIT Maximum repetitive peak reverse voltage V 60 V RRM 20 per device Maximum average forward rectified current I A F(AV) (fig. 1) per diode 10 Peak forward surge current 8.3 ms single half sine-wave I 100 A FSM superimposed on rated load per diode Operating junction and storage temperature range T , T -40 to +150 C J STG Revision: 05-Dec-13 Document Number: 89976 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000V20W60C-M3 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT I = 5 A 0.48 - F T = 25 C A I = 10 A 0.55 0.65 F (1) Instantaneous forward voltage per diode V V F I = 5 A 0.40 - F T = 125 C A I = 10 A 0.51 0.62 F T = 25 C -5000 A A (2) Reverse current per diode V = 60 V I R R T = 125 C 17 60 mA A Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 5 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V20W60CUNIT per diode 2.4 R JC Typical thermal resistance per device 1.2 C/W (1)(2) per device R 65 JA Notes (1) The heat generated must be less than the thermal conductivity from junction-to-ambient: dP /dT < 1/R D J JA (2) Free air, without heatsink ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE V20W60C-M3/I 0.38 I 2500/reel 13 diameter plastic tape and reel RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted) A 24 8 D = 0.8 22 o Rth =Rth =1.2 C/W JA JC 7 D = 0.5 20 D = 0.3 6 18 D = 0.2 16 5 14 D = 1.0 4 12 D = 0.1 10 3 T 8 o 2 6 Rth =65 C/W JA 4 1 D = t /T t p p 2 0 0 0 1 2 3 4 5 6 7 8 9 10 11 12 0 25 50 75 100 125 150 Average Forward Current (A) Case Temperature (C) Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Per Diode Revision: 05-Dec-13 Document Number: 89976 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Average Forward Rectified Current (A) Average Power Loss (W)