333 3 V2P6X www.vishay.com Vishay General Semiconductor Surface-Mount TMBS (Trench MOS Barrier Schottky) Rectifier FEATURES eSMP Series Available Low profile package Trench MOS Schottky technology Low power losses, high efficiency Low forward voltage drop Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C AEC-Q101 qualified available SMP (DO-220AA) - Automotive ordering code base P/NHM3 Cathode Anode Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 DESIGN SUPPORT TOOLS AVAILABLE TYPICAL APPLICATIONS For use in low voltage, high frequency inverters, 3D Models freewheeling, DC/DC converters, and polarity protection applications. PRIMARY CHARACTERISTICS MECHANICAL DATA I 2.0 A F(AV) Case: SMP (DO-220AA) V 60 V Molding compound meets UL 94 V-0 flammability rating RRM Base P/N-M3 - halogen-free, RoHS-compliant, and I 50 A FSM commercial grade V at I = 2.0 A 0.51 V F F Base P/NHM3 - halogen-free, RoHS-compliant, and T max. 175 C J AEC-Q101 qualified Package SMP (DO-220AA) Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 Circuit configuration Single M3 and HM3 suffix meets JESD 201 class 2 whisker test Polarity: color band denotes the cathode end MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V2P6X UNIT Device marking code 26X Maximum repetitive peak reverse voltage V 60 V RRM (1) Maximum DC forward current I 2A F Peak forward surge current 8.3 ms single half sine-wave I 50 A FSM superimposed on rated load (2) Operating junction temperature range T -40 to +175 C J Storage temperature range T -55 to +175 C STG Notes (1) Free air, mounted on recommended copper pad area (2) The heat generated must be less than the thermal conductivity from junction-to-ambient: dP /dT < 1/R D J JA Revision: 02-Aug-2019 Document Number: 87457 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD DV2P6X www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT I = 1 A 0.48 - F T = 25 C A I = 2 A 0.56 0.64 F (1) Instantaneous forward voltage V V F I = 1 A 0.40 - F T = 125 C A I = 2 A 0.51 0.59 F T = 25 C -0.1 A (2) Reverse current V = 60 V I mA R R T = 125 C 1.0 2.0 A Typical junction capacitance 4.0 V, 1 MHz C 240 - pF J Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: pulse width 5 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise specified) A PARAMETER SYMBOL V2P6X UNIT (1) R 125 JA Typical thermal resistance C/W (2) R 15 JM Notes (1) Free air, mounted on recommended PCB, 2 oz. pad area thermal resistance R - junction-to-ambient JA (2) Units mounted on recommended copper pad areas R - junction-to-mount JM ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE V2P6X-M3/H 0.024 H 3000 7 diameter plastic tape and reel V2P6X-M3/I 0.024 I 10 000 13 diameter plastic tape and reel (1) V2P6XHM3/H 0.024 H 3000 7 diameter plastic tape and reel (1) V2P6XHM3/I 0.024 I 10 000 13 diameter plastic tape and reel Note (1) AEC-Q101 qualified Revision: 02-Aug-2019 Document Number: 87457 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000