V8PAM10S-M3/H Vishay

333 3 V8PAM10S www.vishay.com Vishay General Semiconductor Surface-Mount TMBS (Trench MOS Barrier Schottky) Rectifier FEATURES Available eSMP Series Very low profile - typical height of 0.95 mm Ideal for automated placement Trench MOS Schottky technology Low power losses, high efficiency Low forward voltage drop Meets MSL level 1, per J-STD-020, Top View Bottom View LF maximum peak of 260 C SMPA (DO-221BC) AEC-Q101 qualified available - Automotive ordering code: P/NHM3 Anode Cathode Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 LINKS TO ADDITIONAL RESOURCES TYPICAL APPLICATIONS For use in high frequency inverters, freewheeling, DC/DC 3D Models converters, and polarity protection in commercial and automotive applications. PRIMARY CHARACTERISTICS MECHANICAL DATA I 8.0 A F(AV) Case: SMPA (DO-221BC) Molding compound meets UL 94 V-0 flammability rating V 100 V RRM Base P/N-M3 - halogen-free, RoHS-compliant I 90 A FSM Base P/NHM3 - halogen-free, RoHS-compliant, and V at I = 8.0 A (T = 125 C) 0.63 V F F J AEC-Q101 qualified T max. 175 C J Terminals: matte tin plated leads, solderable per Package SMPA (DO-221BC) J-STD-002 and JESD22-B102 M3 and HM3 suffix meets JESD 201 class 2 whisker test Circuit configuration Single Polarity: color band denotes cathode end MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V8PAM10S UNIT Device marking code 8MBS Maximum repetitive peak reverse voltage V 100 V RRM (1) I 8.0 F(AV) Maximum DC forward current A (2) I 2.8 F(AV) Peak forward surge current 8.3 ms single half sine-wave I 90 A FSM superimposed on rated load (3) Operating junction temperature range T -40 to +175 C J Storage temperature range T -55 to +175 C STG Notes (1) Units mounted on 3 cm x 3 cm aluminum PCB (2) Free air, mounted on recommended copper pad area, 2 oz., FR4 PCB (3) The heat generated must be less than the thermal conductivity from junction-to-ambient: dP /dT < 1/R D J JA Revision: 07-Apr-2020 Document Number: 87013 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD D V8PAM10S www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) J PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT I = 4.0 A 0.61 - F T = 25 C J I = 8.0 A 0.75 0.84 F (1) Instantaneous forward voltage V V F I = 4.0 A 0.53 - F T = 125 C J I = 8.0 A 0.63 0.71 F T = 25 C 0.003 - J V = 70 V R T = 125 C 1.5 - J (2) Reverse current I mA R T = 25 C - 0.18 J V = 100 V R T = 125 C 3 9 J Typical junction capacitance 4.0 V, 1 MHz C 600 - pF J Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 5 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise specified) A PARAMETER SYMBOL V8PAM10S UNIT (1)(2) R 100 JA Typical thermal resistance C/W (3) R 5 JM Notes (1) The heat generated must be less than the thermal conductivity from junction-to-ambient: dP /dT < 1/R D J JA (2) Free air, mounted on recommended PCB, 2 oz. pad area thermal resistance R - junction to ambient JA (3) Units mounted on 3 cm x 3 cm aluminum PCB thermal resistance R - junction to mount JM ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE V8PAM10S-M3/H 0.032 H 3500 7 diameter plastic tape and reel V8PAM10S-M3/I 0.032 I 14 000 13 diameter plastic tape and reel (1) V8PAM10SHM3/H 0.032 H 3500 7 diameter plastic tape and reel (1) V8PAM10SHM3/I 0.032 I 14 000 13 diameter plastic tape and reel Note (1) AEC-Q101 qualified RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise specified) A Axis Title Axis Title 8.0 10000 10 10000 D = 0.8 R = 5 C/W thJM D = 0.5 8 6.0 D = 0.3 T measured at cathode M 1000 1000 terminal mount typical values D = 0.2 D = 1.0 6 4.0 D = 0.1 4 100 R = 100 C/W 100 thJA T 2.0 2 D = t /T t p p 0 10 0 10 02468 10 0 25 50 75 100 125 150 175 Average Forward Current (A) Mount Temperature (C) Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Revision: 07-Apr-2020 Document Number: 87013 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 2nd line Average Forward Rectified Current (A) 1st line 2nd line 2nd line Average Power Loss (W) 1st line 2nd line