333 3 VBUS05M2-HT5 www.vishay.com Vishay Semiconductors 2-Line Low Capacitance, Bidirectional and Symmetrical (BiSy) ESD Protection Diode FEATURES Small DFN1110-3A 2-line ESD protection 3 Working range 5.5 V Low leakage current I < 0.05 A R 1 2 Low load capacitance C < 0.45 pF D DFN1110-3A ESD immunity acc. IEC 61000-4-2 20 kV contact discharge 20 kV air discharge MARKING (example only) ESD capability according to AEC-Q101: human body model: class H3B: > 8 kV XY e3 - pins side wall plated with tin (Sn) 20932 AOI capable AEC-Q101 qualified available Dot = pin marking Material categorization: for definitions of compliance X = date code please see www.vishay.com/doc 99912 Y = type code (see table below) LINKS TO ADDITIONAL RESOURCES 3D Models Models ORDERING INFORMATION ENVIRONMENTAL AND QUALITY CODE PACKAGING CODE RoHS-COMPLIANT + PART NUMBER ORDERING CODE 10K PER 7 REEL LEAD (Pb)-FREE AEC-Q101 TIN (EXAMPLE) (EXAMPLE) (8 mm TAPE) TERMINATIONS QUALIFIED PLATED 10K/BOX = MOQ GREEN VBUS05M2-HT5 - G 3 -08 VBUS05M2-HT5-G3-08 VBUS05M2-HT5 H G 3 -08 VBUS05M2-HT5HG3-08 PACKAGE DATA PACKAGE TYPE MOLDING COMPOUND MOISTURE SOLDERING DEVICE NAME WEIGHT NAME CODE FLAMMABILITY RATING SENSITIVITY LEVEL CONDITIONS MSL level 1 Peak temperature VBUS05M2-HT5 DFN1110-3A M 1.43 mg UL 94 V-0 (according J-STD-020) max. 260 C ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT Peak pulse current Acc. IEC 61000-4-5 t = 8/20 s single shot I 3.4 A P PPM Peak pulse power Acc. IEC 61000-4-5 t = 8/20 s single shot P 60 W P PP Contact discharge acc. IEC 61000-4-2 10 pulses 20 ESD immunity V kV ESD Air discharge acc. IEC 61000-4-2 10 pulses 20 Operating temperature Junction temperature T -55 to +150 C J Storage temperature T -55 to +150 C STG Rev. 1.1, 25-Jan-2021 Document Number: 86166 1 For technical questions, contact: ESDprotection vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD DVBUS05M2-HT5 www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (pin 1 or pin 2 to pin 3 in both directions) (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT Protection paths Number of lines which can be protected N - - 2 lines channel Reverse stand-off voltage Max. reverse working voltage V -- 5.5 V RWM Reverse voltage At I = 0.1 A V 5.5 - - V R R Reverse current At V = 5.5 V I - < 0.001 0.1 A RWM R Reverse breakdown voltage At I = 1 mA V 7.5 8.5 9.5 V R BR At I = 1 A V -11 13 V PP C Reverse clamping voltage At I = I = 3.4 A V -15 18 V PP PPM C Transmission line pulse (TLP), t = 100 ns p V -20- V C-TLP I = 8 A TLP Clamping voltage Transmission line pulse (TLP), t = 100 ns p V -27- V C-TLP I = 16 A TLP Dynamic resistance Transmission line pulse (TLP), t = 100 ns R -1- p DYN At V = 0 V f = 1 MHz - 0.37 0.45 pF R Capacitance C D At V = 3.3 V f = 1 MHz - 0.37 0.45 pF R APPLICATION NOTE The VBUS05M2-HT5 is a two-line ESD protection device with a bidirectional and symmetrical (BiSy) breakdown and clampin g performance made for application with a voltage working range up to 5.5 V. The high ESD immunity and a very low capacitance makes it usable for high frequency applications like USB2.0, USB3.0, or HDMI. With the VBUS05M2-HT5 two high speed data lines can be protected against transient voltage signals like ESD (electro static discharge). Connected to the data line (pin 1 and pin 2) and to ground (pin 3) negative transients will be clamped close above the 5.5 V working range. SCHEMATIC DIAGRAM 3 D P = D N Z D 1 2 Fig. A The simplified schematic diagram in Fig. A shows three identical Z-diodes with the cathode on pin 1, 2, or 3 and common anodes. In reality each Z-diode consist of one Z-diode for the adjustment of the breakdown voltage, and two low capacitanc e switching diodes which provide the low capacitance. Positive transients will be clamped through the switching diode D and P the Z-diode Z while negative transients will be clamped through the switching diode D . D N Rev. 1.1, 25-Jan-2021 Document Number: 86166 2 For technical questions, contact: ESDprotection vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000