VESD05A8C-HNH www.vishay.com Vishay Semiconductors 8-Line ESD Protection Diode Array in LLP1713-9L FEATURES Ultra compact LLP1713-9L package 1 8 9 Low package profile < 0.6 mm 2 7 8-line ESD protection 3 6 Low leakage current I < 1 A R 4 5 Low load capacitance C = 10 pF D 20522 20521 ESD immunity acc. IEC 61000-4-2 8 kV contact discharge 12 kV air discharge MARKING (example only) Working voltage range V = 5 V RWM YXX e4 - precious metal (e.g. Ag, Au, NiPd, NiPdAu) (no Sn) 20719 Material categorization: for definitions of compliance Dot = pin 1 marking please see www.vishay.com/doc 99912 Y = type code (see table below) XX = date code click logo to get started DESIGN SUPPORT TOOLS Models Available ORDERING INFORMATION TAPED UNITS PER REEL DEVICE NAME ORDERING CODE MINIMUM ORDER QUANTITY (8 mm TAPE ON 7 REEL) VESD05A8C-HNH VESD05A8C-HNH-GS08 3000 15 000 PACKAGE DATA PACKAGE TYPE MOLDING COMPOUND MOISTURE DEVICE NAME WEIGHT SOLDERING CONDITIONS NAME CODE FLAMMABILITY RATING SENSITIVITY LEVEL MSL level 1 VESD05A8C-HNH LLP1713-9L F 3.7 mg UL 94 V-0 Peak temperature max. 260 C (according J-STD-020) ABSOLUTE MAXIMUM RATINGS VESD05A8C-HNH PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT BiAs-mode: each input (pin 1 to pin 8) to ground (pin 9) Peak pulse current I 2.5 A PPM acc. IEC 61000-4-5 t = 8/20 s single shot p BiAs-mode: each input (pin 1 to pin 8) to ground (pin 9) Peak pulse power P 33 W PP acc. IEC 61000-4-5 tp = 8/20 s single shot Contact discharge acc. IEC 61000-4-2 10 pulses 8 kV BiAs-mode: each input (pin 1 to pin 8) to ground (pin 9) ESD immunity V ESD Air discharge acc. IEC 61000-4-2 10 pulses 12 kV BiAs-mode: each input (pin 1 to pin 8) to ground (pin 9) Operating temperature Junction temperature T -40 to +125 C J Storage temperature T -55 to +150 C STG Rev. 1.5, 09-Jan-2019 Document Number: 81705 1 For technical questions, contact: ESDprotection vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VESD05A8C-HNH www.vishay.com Vishay Semiconductors BiAs-MODE (8-line bidirectional asymmetrical protection mode) With the VESD05A8C-HNH up to 8 signal- or data-lines (L1 to L8) can be protected against voltage transients. With pin 9 connected to ground and pin 1 up to pin 8 connected to a signal- or data-line which has to be protected. As long as the voltage level on the data- or signal-line is between 0 V (ground level) and the specified maximum reverse working voltage (V ) the RWM protection diode between data line and ground offer a high isolation to the ground line. The protection device behaves like an open switch. As soon as any positive transient voltage signal exceeds the break through voltage level of the protection diode, the diode becomes conductive and shorts the transient current to ground. Now the protection device behaves like a closed switch. The clamping voltage (V ) is defined by the breakthrough voltage (V ) level plus the voltage drop at the series impedance C BR (resistance and inductance) of the protection device. Any negative transient signal will be clamped accordingly. The negative transient current is flowing in the forward direction of the protection diode. The low forward voltage (V ) clamps the negative transient close to the ground level. F Due to the different clamping levels in forward and reverse direction the VESD05A8C-HNH clamping behaviour is bidirectional and asymmetrical (BiAs). L1 L8 1 8 9 L2 L7 2 7 L3 L6 3 6 L4 L5 4 5 20524 ELECTRICAL CHARACTERISTICS VESD05A8C-HNH PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT Protection paths Number of lines which can be protected N - - 8 lines channel Reverse working voltage at I = 1 A V 5- - V R RWM Reverse current at V = V = 5 V I -- 0.1 A R RWM R Reverse breakdown voltage at I = 1 mA V 6- 8 V R BR Reverse clamping voltage at I = 2.5 A acc. IEC 61000-4-5 V -- 13 V PP C Forward clamping voltage at I = 2.5 A acc. IEC 61000-4-5 V -- 4.5 V F F at V = 0 V f = 1 MHz C -10 13 pF R D Capacitance at V = 2.5 V f = 1 MHz C -5 7 pF R D Notes Ratings at 25 C, ambient temperature unless otherwise specified. BiAs mode: each input (pin 1 to pin 8) to ground (pin 9) If a higher surge current or peak pulse current (I ) is needed, some protection diodes in the VESD05A8C-HNH can also be used PP in parallel in order to multiply the performance. If two diodes are switched in parallel you get double surge power = double peak pulse current (2 x I ) PPM half of the line inductance = reduced clamping voltage half of the line resistance = reduced clamping voltage double line capacitance (2 x C ) D double reverse leakage current (2 x I ) R L1 L4 1 8 9 2 7 3 6 L2 L3 4 5 20525 Rev. 1.5, 09-Jan-2019 Document Number: 81705 2 For technical questions, contact: ESDprotection vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000