333 3 VESD05B1-02V www.vishay.com Vishay Semiconductors Single ESD-Protection Diode in SOD-523 FEATURES Compact SOD-523 package Low package height < 0.7 mm 1 2 1-line ESD-protection AEC-Q101 qualified 20278 Working range 5 V 19344 Low leakage current I < 0.1 A R Capacitance typical C = 12 pF D MARKING (example only) ESD-protection acc. IEC 61000-4-2 30 kV contact discharge 30 kV air discharge XY 20279 Lead plating: Sn (e3) - soldering can be checked by standard vision inspection Bar = cathode marking - AOI = automated optical inspection X = date code - no X-ray necessary Y = type code (see table below) Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 LINKS TO ADDITIONAL RESOURCES 3D Models ORDERING INFORMATION ENVIRONMENTAL AND QUALITY CODE RoHS COMPLIANT + PART NUMBER AEC-Q101 8K PER 7 REEL ORDERING CODE LEAD (Pb)-FREE (EXAMPLE) QUALIFIED (8 mm TAPE) (EXAMPLE) TIN PLATED TERMINATIONS GREEN MOQ = 8K/BOX VESD05B1-02V-G 3 -08 VESD05B1-02V-G3-08 VESD05B1-02VHG 3 -08 VESD05B1-02VHG3-08 PACKAGE DATA PACKAGE TYPE MOLDING COMPOUND MOISTURE DEVICE NAME WEIGHT SOLDERING CONDITIONS NAME CODE FLAMMABILITY RATING SENSITIVITY LEVEL MSL level 1 VESD05B1-02V SOD-523 . H 1.32 mg UL 94 V-0 Peak temperature max. 260 C (according J-STD-020) ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT Peak pulse current Acc. IEC 61000-4-5, 8/20 s/single shot I 3.5 A PPM Peak pulse power Acc. IEC 61000-4-5, 8/20 s/single shot P 40 W PP Contact discharge acc. IEC 61000-4-2 10 pulses 30 kV ESD immunity V ESD Air discharge acc. IEC 61000-4-2 10 pulses 30 kV Operating temperature Junction temperature T -55 to +150 C J Storage temperature T -55 to +150 C stg Rev. 1.2, 05-Aug-2020 Document Number: 86124 1 For technical questions, contact: ESDprotection vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD DVESD05B1-02V www.vishay.com Vishay Semiconductors BiAs-MODE (bidirectional asymmetrical protection mode) With the VESD05B1-02V one signal- or data-lines (L1) can be protected against voltage transients. With pin 1 connected to ground and pin 2 connected to a signal- or data-line which has to be protected. As long as the voltage level on the data- or signal-line is between 0 V (ground level) and the specified maximum reverse working voltage (V ) the protection diode RWM between data line and ground offers a high isolation to the ground line. The protection device behaves like an open switch. As soon as any positive transient voltage signal exceeds the break down voltage level of the protection diode, the diode becomes conductive and shorts the transient current to ground. Now the protection device behaves like a closed switch. The clamping voltage (V ) is defined by the break down voltage (V ) level plus the voltage drop at the series impedance (resistance C BR and inductance) of the protection device. Any negative transient signal will be clamped accordingly. The negative transient current is flowing in the forward direction of the protection diode. The low forward voltage (V ) clamps the negative transient close to the ground level. F Due to the different clamping levels in forward and reverse direction the VESD05B1-02V clamping behavior is bidirectional and asymmetrical (BiAs). L1 BiAs Ground 20280 ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT Protection paths Number of lines which can be protected N - - 1 lines channel Reverse stand off voltage Max. reverse working voltage V -- 5 V RWM Reverse voltage At I = 0.1 A V 5- - V R R Reverse current At V = 5 V I - 0.01 0.1 A R R Reverse breakdown voltage At I = 1 mA V 66.8 7.5 V R BR At I = 1 A, t = 300 s V -7.2 9.5 V PP p C Reverse clamping voltage At I = I = 3.5 A, t = 8/20 s V -8.6 11 V PP PPM p C At I = 0.2 A, t = 300 s V - 0.95 1.2 V PP p F Forward clamping voltage At I = 1 A, t = 300 s V -1.3 - V PP p F At I = I = 3.5 A, t = 300 s V -1.9 - V PP PPM p F t = 100 ns (TLP) pin 1-2 -0.2 - p Dynamic resistance r dyn t = 100 ns (TLP) pin 2-1 - 0.31 - p At V = 0 V f = 1 MHz C -19 23 pF R D Capacitance At V = 2.5 V f = 1 MHz C -12- pF R D Rev. 1.2, 05-Aug-2020 Document Number: 86124 2 For technical questions, contact: ESDprotection vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 1 2