VLDS1235.., VLDR1235.., VLDK1235.., VLDY1235.. www.vishay.com Vishay Semiconductors Dome Lens SMD LED FEATURES VLD.1235R... VLD.1235G... Utilizing latest advanced AlInGaP technology Package type: surface-mount Package form: gullwing, reverse gullwing Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.8 High luminous flux and luminous intensity Luminous intensity and color categorized per packing unit Luminous intensity ratio per packing unit DESCRIPTION I /I 1.6 Vmax. Vmin. The dome lens SMD LED series has been designed in a ESD-withstand voltage: up to 2 kV according to small untinted and clear molded package with lens for JESD22-A114-B surface mounting as gullwing or reverse gullwing version. Preconditioning according to JEDEC level 2a The VLD.1235... series is using recent ultrabright AlInGaP / Suitable for reflow soldering according to J-STD-020 Si chip technology with high luminous flux and large chip size allowing a high DC forward current up to 70 mA. Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 PRODUCT GROUP AND PACKAGE DATA APPLICATIONS Product group: LED Traffic signals and signs Product series: power Interior and exterior lighting Package: SMD dome lens Indicator and backlighting purposes for audio, video, Angle of half intensity: 11 LCDs switches, symbols, illuminated advertising etc. PARTS TABLE LUMINOUS FORWARD WAVELENGTH at at at INTENSITY VOLTAGE (nm) PART COLOR I I I TECHNOLOGY F F F (mcd) (V) (mA) (mA) (mA) MIN. TYP. MAX. MIN. TYP. MAX. MIN. TYP. MAX. VLDS1235G Super red 5600 11 000 22 400 50 626 630 637 50 1.9 2.2 2.7 50 AlInGaP on Si VLDS1235R Super red 5600 11 000 22 400 50 626 630 637 50 1.9 2.2 2.7 50 AlInGaP on Si VLDR1235G Red 9000 14 500 35 500 50 619 624 631 50 1.9 2.2 2.7 50 AlInGaP on Si VLDR1235R Red 9000 14 500 35 500 50 619 624 631 50 1.9 2.2 2.7 50 AlInGaP on Si VLDK1235G Amber 9000 18 000 35 500 50 611 616 621 50 1.9 2.25 2.7 50 AlInGaP on Si VLDK1235R Amber 9000 18 000 35 500 50 611 616 621 50 1.9 2.25 2.7 50 AlInGaP on Si VLDY1235G Yellow 9000 18 000 35 500 50 583 589 595 50 1.9 2.3 2.7 50 AlInGaP on Si VLDY1235R Yellow 9000 18 000 35 500 50 583 589 595 50 1.9 2.3 2.7 50 AlInGaP on Si VLDS1235G-08 Super red 5600 11 000 22 400 50 626 630 637 50 1.9 2.2 2.7 50 AlInGaP on Si VLDS1235R-08 Super red 5600 11 000 22 400 50 626 630 637 50 1.9 2.2 2.7 50 AlInGaP on Si VLDR1235G-08 Red 9000 14 500 35 500 50 619 624 631 50 1.9 2.2 2.7 50 AlInGaP on Si VLDR1235R-08 Red 9000 14 500 35 500 50 619 624 631 50 1.9 2.2 2.7 50 AlInGaP on Si VLDK1235G-08 Amber 9000 18 000 35 500 50 611 616 621 50 1.9 2.25 2.7 50 AlInGaP on Si VLDK1235R-08 Amber 9000 18 000 35 500 50 611 616 621 50 1.9 2.25 2.7 50 AlInGaP on Si VLDY1235G-08 Yellow 9000 18 000 35 500 50 583 589 595 50 1.9 2.3 2.7 50 AlInGaP on Si VLDY1235R-08 Yellow 9000 18 000 35 500 50 583 589 595 50 1.9 2.3 2.7 50 AlInGaP on Si Rev. 1.1, 07-Jun-17 Document Number: 84280 1 For technical questions, contact: LED vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VLDS1235.., VLDR1235.., VLDK1235.., VLDY1235.. www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb VLDS1235..., VLDR1235..., VLDK1235..., VLDY1235... PARAMETER TEST CONDITION SYMBOL VALUE UNIT (1) Reverse voltage Short term application only V 5V R DC Forward current T 60 C I 70 mA amb F Power dissipation P 200 mW V Junction temperature T 125 C j Operating temperature range T -40 to +100 C amb Storage temperature range T -40 to +100 C stg 2 Thermal resistance junction-to-ambient Mounted on PC board (pad size > 16 mm)R 325 K/W thJA Note (1) Driving the LED in reverse direction is suitable for a short term application only OPTICAL AND ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb VLDS1235G, VLDS1235R, SUPER RED PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT (1) Luminous intensity I = 50 mA I 5600 11 000 22 400 mcd F V Luminous flux/luminous intensity /I -0.5 - mlm/mcd V V (1) Dominant wavelength I = 50 mA 626 630 637 nm F d Peak wavelength I = 50 mA - 639 - nm F p Spectral bandwidth at 50 % I I = 50 mA -18 - nm rel max. F Angle of half intensity I = 50 mA - 11 - deg F (1) Forward voltage I = 50 mA V 1.9 2.2 2.7 V F F = 5 V I -0.01 10 A Reverse current V R R Note (1) Tolerances: 15 % for I , 0.1 V for V , 1 nm for V F d OPTICAL AND ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb VLDR1235G, VLDR1235R, RED PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT (1) Luminous intensity I = 50 mA I 9000 14 500 35 500 mcd F V Luminous flux/luminous intensity /I -0.5 - mlm/mcd V V (1) Dominant wavelength I = 50 mA 619 624 631 nm F d Peak wavelength I = 50 mA - 632 - nm F p Spectral bandwidth at 50 % I I = 50 mA -18 - nm rel max. F Angle of half intensity I = 50 mA - 11 - deg F (1) Forward voltage I = 50 mA V 1.9 2.2 2.7 V F F Reverse current V = 5 V I -0.01 10 A R R Note (1) Tolerances: 15 % for I , 0.1 V for V , 1 nm for V F d OPTICAL AND ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb VLDK1235G, VLDK1235R, AMBER PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT (1) Luminous intensity I = 50 mA I 9000 18 000 35 500 mcd F V Luminous flux/luminous intensity /I -0.5 - mlm/mcd V V (1) Dominant wavelength I = 50 mA 611 616 621 nm F d Peak wavelength I = 50 mA - 622 - nm F p Spectral bandwidth at 50 % I I = 50 mA -18 - nm rel max. F Angle of half intensity I = 50 mA - 11 - deg F (1) Forward voltage I = 50 mA V 1.92.252.7 V F F Reverse current V = 5 V I -0.01 10 A R R Note (1) Tolerances: 15 % for I , 0.1 V for V , 1 nm for V F d Rev. 1.1, 07-Jun-17 Document Number: 84280 2 For technical questions, contact: LED vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000