VLMU5200-...-140 www.vishay.com Vishay Semiconductors UV SMD LED with Silicone Lens FEATURES Ceramic SMT package with silicone lens Dimensions (L x W x H) in mm: 5.2 x 5.2 x 3.1 Forward current: up to 700 mA Radiant power (typ.): 2500 mW at 500 mA, 3600 mW at 700 mA Materials: - Die: InGaN - Resin: silicone (water clear) DESCRIPTION - L / F finish: AIN with Au plating The VLMU5200-...-140 series comprises 3 high brightness Grouping parameters: UV LED types within an overall wavelength range from - Radiant power 380nm to 410nm. The ceramic based high power package -Peak wavelength with silicone lens features a good longterm stability against - Forward voltage thermal exposure and UV light irradiation and therefore Reflow soldering method a long life time. The package size is 5.2 mm x 5.2 mm x 3.1 mm, and the radiant power up to 4400 mW at 700 mA, MSL2 according to J-STD-020 with 4 LED chips connected in series. Packaging: 12 mm tape with 100 pieces per reel, 180 mm (7 ) PRODUCT GROUP AND PACKAGE DATA Material categorization: for definitions of compliance Product group: LED please see www.vishay.com/doc 99912 Package: SMD ceramic high power APPLICATIONS Product series: high power UV LED Industrial curing Angle of half intensity: 70 Photocatalytic purification Lead-finishing: Au Poster printing curing SAFETY ADVICES Counterfeit money detector Depending on the mode of operation, these devices emit Blood detector highly concentrated non visible ultraviolet light which can be Nail curing hazardous to the human eye. Products which incorporate Teeth curing these devices have to follow the safety precautions given in IEC 62471 Photobiological Safety of Lamp and Lamp Systems. PARTS TABLE FORWARD RADIANT POWER WAVELENGTH at at at VOLTAGE (mW) (nm) PART COLOR I I I TECHNOLOGY F F F (V) (mA) (mA) (mA) MIN. TYP. MAX. MIN. TYP. MAX. MIN. TYP. MAX. VLMU5200-385-140 Ultraviolet 1800 2500 3300 500 380 385 390 500 13 14.5 16 500 InGaN VLMU5200-395-140 Ultraviolet 1800 2500 3300 500 390 395 400 500 13 14.5 16 500 InGaN VLMU5200-405-140 Ultraviolet 1800 2500 3300 500 400 405 410 500 13 14.5 16 500 InGaN Rev. 1.2, 23-May-16 Document Number: 84832 1 For technical questions, contact: LED vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VLMU5200-...-140 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb VLMU5200-...-140 PARAMETER TEST CONDITION SYMBOL VALUE UNIT DC forward current I 700 mA F Power dissipation P 11.2 W V Electrostatic discharge HBM: MIL-STD-883 C 3B ESD 2000 V Junction temperature T +150 C j Operating temperature range T -40 to +85 C amb Storage temperature range T -40 to +100 C stg Solder temperature T 260 C sol Thermal resistance - junction to solder point R 2.4 C/W thJS OPTICAL AND ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb VLMU5200-...-140, ULTRAVIOLET PARAMETER TEST CONDITION DEVICE TYPE SYMBOL MIN. TYP. MAX. UNIT Forward voltage I = 500 mA V 13.0 14.5 16.0 V F F I = 350 mA 1300 1950 2350 F Radiant power I = 500 mA 1800 2500 3300 mW F e I = 700 mA 2480 3600 4400 F Ratio: radiant intensity / -1 I = 500 mA l -0.28 - sr F e radiant power VLMU5200-385-140 380 385 390 nm Peak wavelength I = 500 mA VLMU5200-395-140 390 395 400 nm F p VLMU5200-405-140 400 405 410 nm Angle of half intensity I = 500 mA - 70 - deg F Note Tolerances: 11 % for , 0.1 V for V , 2 nm for . e F p RADIANT POWER CLASSIFICATION (I = 500 mA) F GROUP MIN. MAX. UNIT PA8 1800 1900 PA9 1900 2000 PB0 2000 2100 PB1 2100 2200 PB2 2200 2300 PB3 2300 2400 PB4 2400 2500 PB5 2500 2600 mW PB6 2600 2700 PB7 2700 2800 PB8 2800 2900 PB9 2900 3000 PC0 3000 3100 PC1 3100 3200 PC2 3200 3300 Rev. 1.2, 23-May-16 Document Number: 84832 2 For technical questions, contact: LED vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000