VLMS20.., VLMK20.., VLMO20.., VLMY20.., VLMP20.. www.vishay.com Vishay Semiconductors Low Current Mini SMD LED FEATURES SMD LED with exceptional brightness Luminous intensity categorized Compatible with automatic placement equipment Available in 8 mm tape Low profile package Non-diffused lens: excellent for coupling to light pipes and backlighting Low power consumption 19226 IR reflow soldering according to J-STD-020 Luminous intensity ratio in one packaging uni t I /I 1.6 Vmax. Vmin. DESCRIPTION Preconditioning according to JEDEC level 2a The new low current MiniLED Series have been designed in a small white SMT package. The feature of the device is the ESD-withstand voltage: up to 2 kV according to very small package 2.3 mm x 1.3 mm x 1.4 mm and the low JESD22-A114-B forward current. The MiniLED is an obvious solution for AEC-Q101 qualified small-scale, high-power products that are expected to work Material categorization: for definitions of compliance reliability in an arduous environment. This is often the case please see www.vishay.com/doc 99912 in automotive and industrial application. APPLICATIONS PRODUCT GROUP AND PACKAGE DATA Automotive: backlighting in dashboards and switches Product group: LED Telecommunication: indicator and backlighting in Package: SMD MiniLED telephone and fax Product series: low current Indicator and backlight for audio and video equipment Angle of half intensity: 60 Indicator and backlight in office equipment Flat backlight for LCDs, switches, and symbols PARTS TABLE LUMINOUS FORWARD WAVELENGTH INTENSITY VOLTAGE at I at I at I F F F (nm) PART COLOR TECHNOLOGY (V) (mcd) (mA) (mA) (mA) MIN. TYP. MAX. MIN. TYP. MAX. MIN. TYP. MAX. VLMS2000-GS08 Super red 2.24 4.5 - 2 - 630 - 2 - 1.8 2.2 2 AllnGaP on GaAs VLMS20H2K1-GS08 Super red 3.55 - 9 2 - 630 - 2 - 1.8 2.2 2 AllnGaP on GaAs VLMS20H2L1-GS08 Super red 3.55 - 14 2 - 630 - 2 - 1.8 2.2 2 AllnGaP on GaAs VLMS20J2L1-GS08 Super red 5.6 - 14 2 - 630 - 2 - 1.8 2.2 2 AllnGaP on GaAs VLMK20J2L2-GS08 Amber 5.6 - 18 2 612 622 624 2 - 1.8 2.2 2 AllnGaP on GaAs VLMK2000-GS08 Amber 7.1 16 - 2 612 622 624 2 - 1.8 2.2 2 AllnGaP on GaAs VLMK20K1L2-GS08 Amber 7.1 - 18 2 612 622 624 2 - 1.8 2.2 2 AllnGaP on GaAs VLMO20J2M1-GS08 Soft orange 5.6 - 22.4 2 598 605 611 2 - 1.8 2.2 2 AllnGaP on GaAs VLMO20K2L2-35-GS08 Soft orange 9 - 18 2 602 - 609 2 - 1.8 2.2 2 AllnGaP on GaAs VLMY2000-GS08 Yellow 3.55 7.1 - 2 581 588 594 2 - 1.8 2.2 2 AllnGaP on GaAs VLMY20J1L2-GS08 Yellow 4.5 - 18 2 581 588 594 2 - 1.8 2.2 2 AllnGaP on GaAs VLMY20K1L2-GS08 Yellow 7.1 - 18 2 581 588 594 2 - 1.8 2.2 2 AllnGaP on GaAs VLMP20D2G1-GS08 Pure green 0.56 - 2.24 2 555 - 565 2 - 1.8 2.2 2 AllnGaP on GaAs Rev. 2.2, 22-May-2019 Document Number: 81339 1 For technical questions, contact: LED vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VLMS20.., VLMK20.., VLMO20.., VLMY20.., VLMP20.. www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb VLMS20.., VLMK20.., VLMO20.., VLMY20.., VLMP20.. PARAMETER TEST CONDITION SYMBOL VALUE UNIT (1) Reverse voltage V 5V R DC forward current T 100 C I 15 mA amb F Surge forward current t 10 s I 0.1 A p FSM Power dissipation P 40 mW V Junction temperature T +125 C j Operating temperature range T -40 to +100 C amb Storage temperature range T -40 to +100 C stg 2 Thermal resistance junction/ambient Mounted on PC board (pad size > 5 mm)R 580 K/W thJA Note (1) Driving the LED in reverse direction is suitable for a short term application OPTICAL AND ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb VLMS20.., SUPER RED PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT VLMS2000 l 2.24 4.5 - mcd V VLMS20H2K1 l 3.55 - 9 mcd V (1) Luminous intensity I = 2 mA F VLMS20H2L1 l 3.55 - 14 mcd V VLMS20J2L1 l 5.6 - 14 mcd V Dominant wavelength I = 2 mA - 630 - nm F d Peak wavelength I = 2 mA - 643 - nm F p Angle of half intensity I = 2 mA - 60 - F Forward voltage I = 2 mA V -1.8 2.2 V F F Reverse voltage I = 10 A V 5- - V R R Junction capacitance V = 0 V, f = 1 MHz C -15- pF R j Note (1) In one packing unit I /I 1.6 Vmax. Vmin. OPTICAL AND ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb VLMK20.., AMBER PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT VLMK20J2L2 l 5.6 - 18 mcd V (1) Luminous intensity I = 2 mA VLMK2000 l 7.1 16 - mcd F V VLMK20K1L2 l 7.1 - 18 mcd V Dominant wavelength I = 2 mA 612 622 624 nm F d Peak wavelength I = 2 mA - 615 - nm F p Angle of half intensity I = 2 mA - 60 - F Forward voltage I = 2 mA V -1.8 2.2 V F F Reverse voltage I = 10 A V 5- - V R R Junction capacitance V = 0 V, f = 1 MHz C -15- pF R j Note (1) In one packing unit I /I 1.6 Vmax. Vmin. Rev. 2.2, 22-May-2019 Document Number: 81339 2 For technical questions, contact: LED vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000