VOL617A www.vishay.com Vishay Semiconductors Optocoupler, Phototransistor Output, 4 Pin LSOP, Long Creepage Mini-Flat Package FEATURES Low profile package A 1 4 C High collector emitter voltage, V = 80 V CEO Isolation test voltage, 5000 V RMS C 2 3 E Isolation voltage V = 1050 V IORM peak Low coupling capacitance 17295-6 High common mode transient immunity Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 DESCRIPTION The VOL617A has a GaAs infrared emitting diode emitter, APPLICATIONS which is optically coupled to a silicon planar phototransistor Telecom detector, and is incorporated in a 4 pin LSOP wide body Industrial controls package. Battery powered equipment It features a high current transfer ratio, low coupling capacitance, and high isolation voltage. Office machines The coupling device is designed for signal transmission Programmable controllers between two electrically separated circuits. AGENCY APPROVALS (All parts are certified under base model VOL617A) UL1577, file no. E76222 cUL CSA 22.2 bulletin 5A, double protection DIN EN 60747-5-5 (VDE 0884-5), available with option 1 BSI: EN 60065:2002, EN 60950-1:2006 FIMKO EN60950-1 CQC: GB8898-2011, GB4943.1-2011 ORDERING INFORMATION V O L 61 7 A - X 001 T LSOP-4 PART NUMBER CTR PACKAGE OPTION TAPE 10.2 mm BIN AND REEL CTR (%) AGENCY CERTIFIED/ PACKAGE 5 mA UL, cUL, BSI, 50 to 600 40 to 80 63 to 125 100 to 200 160 to 320 80 to 160 130 to 260 FIMKO, CQC 4 pin LSOP, mini-flat, VOL617AT VOL617A-1T VOL617A-2T VOL617A-3T VOL617A-4T - - long creepage UL, cUL, BSI, FIMKO, 50 to 600 40 to 80 63 to 125 100 to 200 160 to 320 80 to 160 130 to 260 CQC, VDE (option 1) VOL617A- 4 pin LSOP, mini-flat, VOL617A- VOL617A- VOL617A- VOL617A- VOL617A- VOL617A- 8X001T, long creepage X001T 1X001T 2X001T 3X001T 4X001T 7X001T VOL617A- (1) 8X001T3 Note (1) Product is rotated 180 in tape and reel cavity Rev. 2.1, 28-Jan-2019 Document Number: 82424 1 For technical questions, contact: optocoupleranswers vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VOL617A www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage V 6V R Power dissipation P 100 mW diss Forward surge current t < 10 s I 1.5 A p FSM Forward current I 60 mA F Junction temperature T 125 C j OUTPUT Collector emitter voltage V 80 V CEO Emitter collector voltage V 7V ECO I 50 mA C Collector current t /T = 0.5, t < 10 ms I 100 mA p p C Power dissipation P 150 mW diss Junction temperature T 125 C j COUPLER Total power dissipation P 250 mW tot Storage temperature range T -55 to +125 C stg Ambient temperature range T -55 to +110 C amb (1) Soldering temperature 10 s T 260 C sld Notes Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability (1) Refer to reflow profile for soldering conditions for surface mounted devices 300 Coupled device 250 200 Phototransistor 150 100 IR diode 50 0 0 20 40 60 80 100 120 T - Ambient Temperature (C) amb Fig. 1 - Total Power Dissipation vs. Ambient Temperature Rev. 2.1, 28-Jan-2019 Document Number: 82424 2 For technical questions, contact: optocoupleranswers vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 P - Total Power Dissipation (mW) tot