VOM617A www.vishay.com Vishay Semiconductors Low Input Current, Phototransistor Output, SOP-4, Mini-Flat Package FEATURES Operating temperature from - 55 C to + 110 C A 1 4 C SOP-4 mini-flat package C 2 3 E Isolation test voltage, 3750 V RMS Low saturation voltage Fast switching times i179089 Low coupling capacitance End-stackable, 0.100 (2.54 mm) spacing DESCRIPTION CTR range 40 % to 600 %, I = 5 mA F The 110 C rated VOM617A has a GaAs infrared emitting Material categorization: For definitions of compliance diode emitter, which is optically coupled to a silicon planar please see www.vishay.com/doc 99912 phototransistor detector, and is incorporated in a 4 pin 100 mil lead pitch miniflat package. It features a high current APPLICATIONS transfer ratio, low coupling capacitance, and high isolation PLCs voltage. Telecommunication These coupling devices are designed for signal transmission Lighting control system between two electrically separated circuits. Solar inverters AGENCY APPROVALS AC drives (All parts are certified under base model VOM617A) UL1577, file no. E52744 cUL tested to CSA 22.2 bulletin 5A DIN EN 60747-5-5 (VDE 0884-5), available with option 1 FIMKO EN 60065 and EN 60950-1 CQC GB8898-2011, GB4943.1-2001 ORDERING INFORMATION VO M 6 1 7 A - X 0 0 1 T SOP-4 PART NUMBER CTR VDE OPTION TAPE BIN AND 5 REEL AGENCY CTR (%) CERTIFIED/ 5 mA PACKAGE UL, cUL, 50 to 600 63 to 125 100 to 200 160 to 320 250 to 500 80 to 160 130 to 260 200 to 400 FIMKO, CQC SOP-4, VOM617AT VOM617A-2T VOM617A-3T VOM617A-4T VOM617A-6T VOM617A-7T VOM617A-8T VOM617A-9T mini-flat VDE, UL, cUL, 50 to 600 63 to 125 100 to 200 160 to 320 250 to 500 80 to 160 130 to 260 200 to 400 FIMKO, CQC SOP-4, VOM617A- VOM617A- VOM617A- VOM617A- VOM617A- VOM617A- VOM617A- VOM617A- mini-flat X001T 2X001T 3X001T 4X001T 6X001T 7X001T 8X001T 9X001T Rev. 1.3, 11-Dec-12 Document Number: 83446 1 For technical questions, contact: optocoupleranswers vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VOM617A www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT DC forward current I 60 mA F Reverse voltage V 6V R Power dissipation P 70 mW diss Surge forward current t 10 s I 2.5 A p FSM OUTPUT Collector emitter voltage V 80 V CEO Emitter collector voltage V 7V ECO 50 mA Collector current I C t 1 ms 100 mA p Power dissipation P 150 mW diss COUPLER Isolation test voltage t = 1 min V 3750 V ISO RMS between emitter and detector Total power dissipation P 170 mW tot Operating temperature range T - 55 to + 110 C amb Storage temperature range T - 55 to + 150 C stg Junction temperature T 125 C j (1) Soldering temperature T 260 C sld Notes Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (1) See Assembly Instructions for surface mounted devices (www.vishay.com/doc 80054). 200 Coupled device 150 Phototransistor 100 IR-diode 50 0 0 25 50 75 100 125 T - Ambient Temperature (C) amb Fig. 1 - Total Power Dissipation vs. Ambient Temperature Rev. 1.3, 11-Dec-12 Document Number: 83446 2 For technical questions, contact: optocoupleranswers vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 P - Total Power Dissipation (mW) tot