VOM618A www.vishay.com Vishay Semiconductors Low Input Current, Phototransistor Output, SOP-4, Mini-Flat Package FEATURES Operating temperature from - 55 C to + 110 C SOP-4 mini-flat package A 4 C 1 CTR range 40 % to 600 %, I = 1 mA F Isolation test voltage, 3750 V RMS C 2 3 E Low saturation voltage Fast switching times i179089 Low coupling capacitance End-stackable, 0.100 (2.54 mm) spacing Material categorization: For definitions of compliance please see www.vishay.com/doc 99912 DESCRIPTION APPLICATIONS The 110 C rated VOM618A has a GaAs infrared emitting PLCs diode emitter, which is optically coupled to a silicon planar Telecommunication phototransistor detector, and is incorporated in a 4 pin 100 mil lead pitch miniflat package. It features a high current Lighting control system transfer ratio with low input current, low coupling Solar inverters capacitance, and high isolation voltage. AC drives These coupling devices are designed for signal transmission between two electrically separated circuits. AGENCY APPROVALS (All parts are certified under base model VOM618A) UL1577, file no. E52744 cUL tested to CSA 22.2 bulletin 5A DIN EN 60747-5-5 (VDE 0884-5), available with option 1 FIMKO EN 60065 and EN 60950-1 CQC: GB8898-2011, GB4943.1-2011 ORDERING INFORMATION VO M 6 1 8 A - X 0 0 1 T SOP-4 PART NUMBER CTR VDE OPTION TAPE BIN AND 5 REEL AGENCY CTR (%) CERTIFIED/ 1 mA PACKAGE UL, cUL, FIMKO, 50 to 600 40 to 80 63 to 125 100 to 200 160 to 320 50 to 100 80 to 160 130 to 260 CQC SOP-4, VOM618AT VOM618A-1T VOM618A-2T VOM618A-3T VOM618A-4T VOM618A-5T VOM618A-7T VOM618A-8T mini-flat VDE, UL, cUL, CQC, 50 to 600 40 to 80 63 to 125 100 to 200 160 to 320 50 to 100 80 to 160 130 to 260 FIMKO SOP-4, VOM618A- VOM618A- VOM618A- VOM618A- VOM618A- VOM618A- VOM618A- VOM618A- mini-flat X001T 1X001T 2X001T 3X001T 4X001T 5X001T 7X001T 8X001T Rev. 1.4, 21-Oct-13 Document Number: 83449 1 For technical questions, contact: optocoupleranswers vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VOM618A www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT DC forward current I 60 mA F Reverse voltage V 6V R Power dissipation P 70 mW diss Surge forward current t 10 s I 2.5 A p FSM OUTPUT Collector emitter voltage V 80 V CEO Emitter collector voltage V 7V ECO I 50 mA C Collector current t 1 ms I 100 mA p C Power dissipation P 150 mW diss COUPLER Isolation test voltage between emitter t = 1 min V 3750 V ISO RMS and detector Total power dissipation P 170 mW tot Operating temperature range T - 55 to + 110 C amb Storage temperature range T - 55 to + 150 C stg Junction temperature T 125 C j (1) Soldering temperature T 260 C sld Notes Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (1) See Assembly Instructions for surface mounted devices (www.vishay.com/doc 80054). 200 Coupled device 150 Phototransistor 100 IR-diode 50 0 0 25 50 75 100 125 T - Ambient Temperature (C) amb Fig. 1 - Total Power Dissipation vs. Ambient Temperature Rev. 1.4, 21-Oct-13 Document Number: 83449 2 For technical questions, contact: optocoupleranswers vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 P - Total Power Dissipation (mW) tot