33 3 VOMA618A www.vishay.com Vishay Semiconductors Optocoupler, Phototransistor Output, Low Input Current, SOP-4, Mini-Flat Package FEATURES AEC-Q101 qualified A 1 4 C High CTR with low input current Low power consumption C 2 3 E SOP-4 low profile package High collector emitter voltage, V = 80 V CEO Isolation test voltage = 3750 V RMS Low coupling capacitance Material categorization: for definitions of compliance please see DESIGN SUPPORT TOOLS AVAILABLE www.vishay.com/doc 99912 3D Models Models Related APPLICATIONS Documents Galvanic and noise isolation DESCRIPTION Signal transmission The VOMA618A series has a GaAlAs infrared emitting diode, Hybrid / electric vehicle applications which is optically coupled to a silicon planar phototransistor Battery management detector, and is incorporated in a 4-pin mini-flat package. 48 V board net It features a high current transfer ratio at low input current, low coupling capacitance, and high isolation voltage. System control The coupling device is designed for signal transmission AGENCY APPROVALS between two electrically separated circuits, specifically for use in automotive, as well as high reliable industrial UL1577 applications. cUL 1577 DIN EN 60747-5-5 (VDE 0884-5) CQC GB4943.1-2011 ORDERING INFORMATION V O M A 6 1 8 A - X 001 T SOP-4 PART NUMBER CTR PACKAGE OPTION TAPE 5 mm BIN AND REEL CTR (%) AGENCY CERTIFIED / PACKAGE 1 mA UL, cUL, VDE, CQC 50 to 600 63 to 125 100 to 200 160 to 320 130 to 260 SOP-4 VOMA618A-X001T VOMA618A-2X001T VOMA618A-3X001T VOMA618A-4X001T VOMA618A-8X001T Note Additional options may be possible, please contact sales office Rev. 1.1, 05-Jul-2019 Document Number: 84949 1 For technical questions, contact: optocoupleranswers vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DD DVOMA618A www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage V 5V R Power dissipation P 30 mW diss Forward current I 20 mA F Surge forward current t 10 s I 0.5 A p FSM Junction temperature T 125 C j OUTPUT Collector emitter voltage V 80 V CEO Emitter collector voltage V 7V ECO Collector current I 50 mA C Power dissipation P 150 mW diss Junction temperature T 125 C j COUPLER Total power dissipation P 180 mW tot Storage temperature range T -40 to +150 C stg Ambient temperature range T -40 to +110 C amb Soldering temperature t = 10 s T 260 C sld Note Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability Axis Title Axis Title 200 10000 25 10000 Coupled device 20 150 1000 1000 15 Phototransistor 100 10 100 100 50 IR diode 5 0 10 0 10 0 255075 100 125 0 255075 100 125 T - Ambient Temperature (C) T - Ambient Temperature (C) amb amb Fig. 1 - Power Dissipation vs. Ambient Temperature Fig. 2 - Maximum Forward Current vs. Ambient Temperature Rev. 1.1, 05-Jul-2019 Document Number: 84949 2 For technical questions, contact: optocoupleranswers vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 2nd line P - Total Power Dissipation (mW) tot 1st line 2nd line 2nd line I - Forward Current (mA) F 1st line 2nd line