VOS617B www.vishay.com Vishay Semiconductors Optocoupler, Phototransistor Output, Low Input Current, SSOP-4, Half Pitch, Mini-Flat Package FEATURES High CTR with low input current A 1 4 C SSOP low profile package (half pitch) High collector emitter voltage, V = 80 V CEO C 2 3 E Isolation test voltage = 3750 V RMS Low coupling capacitance Material categorization: 22628-1 for definitions of compliance please see www.vishay.com/doc 99912 DESCRIPTION APPLICATIONS The VOS617B series has a GaAs infrared emitting diode Telecom emitter, which is optically coupled to a silicon planar Industrial controls phototransistor detector, and is incorporated in a 4-pin Battery powered equipment 50 mil lead pitch mini-flat package. Office machines It features a high current transfer ratio at low input current, low coupling capacitance, and high isolation voltage. Programmable controllers The coupling devices are designed for signal transmission AGENCY APPROVALS between two electrically separated circuits. Safety application model number covering all products in this datasheet is VOS617B. This model number should be used when consulting safety agency documents. UL1577 cUL, accordance to CSA DIN EN 60747-5-5 (VDE 0884-5), available with option 1 FIMKO CQC ORDERING INFORMATION V O S 6 1 7 B - X 001 T SSOP-4 PART NUMBER CTR PACKAGE OPTION TAPE 5 mm BIN AND REEL CTR (%) AGENCY CERTIFIED/PACKAGE 5 mA UL, cUL, FIMKO, CQC 50 to 600 63 to 125 100 to 200 80 to 160 130 to 260 SSOP-4, 50 mil pitch - VOS617B-2T VOS617B-3T VOS617B-7T - UL, cUL, FIMKO, 50 to 600 63 to 125 100 to 200 80 to 160 130 to 260 CQC, VDE (option 1) SSOP-4, 50 mil pitch VOS617B-X001T VOS617B-2X001T VOS617B-3X001T VOS617B-7X001T VOS617B-8X001T Note Additional options may be possible, please contact sales office. Rev. 1.3, 28-Nov-16 Document Number: 84270 1 For technical questions, contact: optocoupleranswers vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VOS617B www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage V 6V R Power dissipation P 100 mW diss Forward current I 60 mA F Surge forward current t 10 s I 1.5 A p FSM Junction temperature T 125 C j OUTPUT Collector emitter voltage V 80 V CEO Emitter collector voltage V 7V ECO Collector current I 50 mA C Power dissipation P 150 mW diss Junction temperature T 125 C j COUPLER Total power dissipation P 250 mW tot Storage temperature range T -55 to +150 C stg Ambient temperature range T -55 to +110 C amb Soldering temperature t = 10 s T 260 C sld Note Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. 300 70 Coupled device 60 250 50 200 40 Phototransistor 150 30 IR diode 100 20 50 10 0 0 0 20 40 60 80 100 120 -25 0 25 50 75 100 125 T - Ambient Temperature (C) T - Ambient Temperature (C) amb amb Fig. 1 - Power Dissipation vs. Ambient Temperature Fig. 2 - Maximum Forward Current vs. Ambient Temperature Rev. 1.3, 28-Nov-16 Document Number: 84270 2 For technical questions, contact: optocoupleranswers vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 P - Total Power Dissipation (mW) tot I - Maximum Forward Current (mA) F