VS-12F(R) Series www.vishay.com Vishay Semiconductors Standard Recovery Diodes, (Stud Version), 12 A FEATURES High surge current capability Stud cathode and stud anode version Wide current range Types up to 1200 V V RRM Designed and qualified for industrial and consumer level DO-4 (DO-203AA) Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 TYPICAL APPLICATIONS PRIMARY CHARACTERISTICS Battery charges I 12 A F(AV) Converters Package DO-4 (DO-203AA) Power supplies Circuit configuration Single Machine tool controls MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS VALUES UNITS 12 A I F(AV) T 144 C C I 19 A F(RMS) 50 Hz 265 I A FSM 60 Hz 280 50 Hz 351 2 2 I t A s 60 Hz 320 V Range 100 to 1200 V RRM T -65 to +175 C J ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS V , MAXIMUM V , MAXIMUM RRM RSM I MAXIMUM RRM TYPE VOLTAGE REPETITIVE PEAK NON-REPETITIVE AT T = 175 C J NUMBER CODE REVERSE VOLTAGE PEAK VOLTAGE mA V V 10 100 150 20 200 275 40 400 500 VS-12F(R) 60 600 725 12 80 800 950 100 1000 1200 120 1200 1400 Revision: 11-Jan-18 Document Number: 93487 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-12F(R) Series www.vishay.com Vishay Semiconductors FORWARD CONDUCTION PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 12 A Maximum average forward current I 180 conduction, half sine wave F(AV) at case temperature 144 C Maximum RMS forward current I 19 A F(RMS) t = 10 ms 265 No voltage reapplied t = 8.3 ms 280 Maximum peak, one-cycle forward, I A FSM non-repetitive surge current t = 10 ms 225 100 % V RRM reapplied t = 8.3 ms 235 Sinusoidal half wave, initial T = T maximum t = 10 ms J J 351 No voltage reapplied t = 8.3 ms 320 2 2 2 Maximum I t for fusing I t A s t = 10 ms 250 100 % V RRM reapplied t = 8.3 ms 226 2 2 2 Maximum I t for fusing I t t = 0.1 to 10 ms, no voltage reapplied 3510 A s Low level value of threshold voltage V (16.7 % x x I < I < x I ), T = T maximum 0.77 F(TO)1 F(AV) F(AV) J J V High level value of threshold voltage V (I > x I ), T = T maximum 0.97 F(TO)2 F(AV) J J Low level value of forward r (16.7 % x x I < I < x I ), T = T maximum 10.70 f1 F(AV) F(AV) J J slope resistance m High level value of forward r (I > x I ), T = T maximum 6.20 f2 F(AV) J J slope resistance Maximum forward voltage drop V I = 38 A, T = 25 C, t = 400 s rectangular wave 1.26 V FM pk J p THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction operating temperature range T -65 to +175 J C Maximum storage temperature range T -65 to +200 Stg Maximum thermal resistance, junction to case R DC operation 2 thJC K/W Maximum thermal resistance, case to heatsink R Mounting surface, smooth, flat and greased 0.5 thCS 1.5 + 0 - 10 % N m Not lubricated threads 13 lbf in Allowable mounting torque 1.2 + 0 - 10 % N m Lubricated threads 10 lbf in 7g Approximate weight 0.25 oz. Case style See dimensions - link at the end of datasheet DO-4 (DO-203AA) R CONDUCTION thJC CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS 180 0.33 0.26 120 0.41 0.44 90 0.53 0.58 T = T maximum K/W J J 60 0.78 0.81 30 1.28 1.29 Note The table above shows the increment of thermal resistance R when devices operate at different conduction angles than DC thJC Revision: 11-Jan-18 Document Number: 93487 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000