333 3 VS-1EMH01HM3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 1 A FRED Pt FEATURES Hyperfast recovery time, reduced Q , and rr soft recovery 175 C maximum operating junction temperature Cathode Anode Specified for output and snubber operation Low forward voltage drop Low leakage current SMA (DO-214AC) Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C AEC-Q101 qualified, meets JESD 201 class 2 whisker test Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 LINKS TO ADDITIONAL RESOURCES DESCRIPTION / APPLICATIONS 3D Models State of the art hyperfast recovery rectifiers specifically designed with optimized performance of forward voltage drop and hyperfast recovery time. The planar structure and the platinum doped life time control PRIMARY CHARACTERISTICS guarantee the best overall performance, ruggedness, and I 1 A F(AV) reliability characteristics. V 100 V R These devices are intended for use in snubber, boost, lighting, piezo-injection, as high frequency rectifiers, an d V at I 0.68 V F F freewheeling diodes. t 25 ns rr Their extremely optimized stored charge and low recovery T max. 175 C J current minimize the switching losses and reduce power Package SMA (DO-214AC) dissipation in the switching element. Circuit configuration Single MECHANICAL DATA Case: SMA (DO-214AC) Molding compound meets UL 94 V-0 flammability rating Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 Polarity: color band denotes cathode end ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONS VALUESUNITS Peak repetitive reverse voltage V 100 V RRM Average rectified forward current I T = 158 C 1 F(AV) Sp A Non-repetitive peak surge current I T = 25 C, 6 ms square pulse 50 FSM J Operating junction and storage temperatures T , T -55 to +175 C J Stg Revision: 17-Jul-2020 Document Number: 95827 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD D VS-1EMH01HM3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, blocking voltage V , V I = 100 A 100 - - BR R R I = 1 A - 0.82 0.90 V F Forward voltage, per diode V F I = 1 A, T = 125 C - 0.68 0.76 F J V = V rated - - 2 R R Reverse leakage current, per diode I A R T = 125 C, V = V rated - 0.6 8 J R R Junction capacitance C V = 100 V - 8.5 - pF T R DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1.0 A, dI /dt = 50 A/s, V = 30 V - 24 - F F R I = 0.5 A, I = 1 A, I = 0.25 A - - 25 F R rr Reverse recovery time t ns rr T = 25 C - 15.2 - J T = 125 C - 21 - J I = 1 A, T = 25 C F - 1.38 - J Peak recovery current I dI /dt = 200 A/s, A RRM F T = 125 C - 2 - J V = 100 V R T = 25 C - 10.6 - J Reverse recovery charge Q nC rr T = 125 C - 21 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and storage temperature range T , T -55 - 175 C J Stg Device mounted on PCB with Thermal resistance, junction to lead R -11 21 C/W thJL 2 x 3.5 mm soldering lands Device mounted on PCB with Thermal resistance, junction to ambient R - - 125 C/W thJA recommended pad size 0.07 g Approximate weight 0.002 oz. Marking device Case style SMA (DO-214AC) 1H1 100 100 10 175 C 150 C T = 175 C J 10 1 125 C 0.1 1 0.01 25 C T = 150 C J 0.001 T = 125 C J T = 25 C J 0.1 0.0001 0.4 0.8 1.2 1.6 2.0 2.4 0 255075 100 V - Forward Voltage Drop (V) V - Reverse Voltage (V) F R Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 17-Jul-2020 Document Number: 95827 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Instantaneous Forward Current (A) F I - Reverse Current (A) R