VS-20MT120UFP www.vishay.com Vishay Semiconductors Full Bridge IGBT MTP (Ultrafast NPT IGBT), 40 A FEATURES Ultrafast non punch through (NPT) technology Positive V temperature coefficient CE(on) 10 s short circuit capability HEXFRED antiparallel diodes with ultrasoft reverse recovery Low diode V F Square RBSOA Aluminum nitride DBC Very low stray inductance design for high speed operation UL approved file E78996 Designed and qualified for industrial level MTP Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 BENEFITS PRIMARY CHARACTERISTICS Optimized for welding, UPS and SMPS applications V 1200 V CES Rugged with ultrafast performance I at T = 25 C 40 A C C Outstanding ZVS and hard switching operation V 3.29 V CE(on) Low EMI, requires less snubbing Speed 8 kHz to 30 kHz Excellent current sharing in parallel operation Package MTP Direct mounting to heatsink Circuit configuration Full bridge PCB solderable terminals Very low junction to case thermal resistance ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONS MAX. UNITS Collector to emitter breakdown voltage V 1200 V CES T = 25 C 40 C Continuous collector current I C T = 106 C 20 C Pulsed collector current I 100 CM A Clamped inductive load current I 100 LM Diode continuous forward current I T = 106 C 25 F C Diode maximum forward current I 100 FM Gate to emitter voltage V 20 GE V Any terminal to case, t = 1 min 2500 RMS isolation voltage V ISOL T = 25 C 240 C Maximum power dissipation (only IGBT) P W D T = 100 C 96 C Revision: 09-Oct-17 Document Number: 94505 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-20MT120UFP www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS Collector to emitter breakdown voltage V V = 0 V, I = 250 A 1200 - - V (BR)CES GE C Temperature coefficient of breakdown voltage V /T V = 0 V, I = 3 mA (25 C to 125 C) - + 1.3 - V/C (BR)CES J GE C V = 15 V, I = 20 A - 3.29 3.59 GE C V = 15 V, I = 40 A - 4.42 4.66 GE C Collector to emitter saturation voltage V V = 15 V, I = 20 A, T = 125 C - 3.87 4.11 CE(on) GE C J V V = 15 V, I = 40 A, T = 125 C - 5.32 5.70 GE C J V = 15 V, I = 20 A, T = 150 C - 3.99 4.27 GE C J Gate threshold voltage V V = V , I = 250 A 4 - 6 GE(th) CE GE C Temperature coefficient of threshold voltage V /T V = V , I = 3 mA (25 C to 125 C) - - 14 - mV/C GE(th) J CE GE C Transconductance g V = 50 V, I = 20 A, PW = 80 s - 17.5 - S fe CE C V = 0 V, V = 1200 V, T = 25 C - - 250 A GE CE J (1) Zero gate voltage collector current I V = 0 V, V = 1200 V, T = 125 C - 0.7 3.0 CES GE CE J mA V = 0 V, V = 1200 V, T = 150 C - 2.9 9.0 GE CE J Gate to emitter leakage current I V = 20 V - - 250 nA GES GE Note (1) I includes also opposite leg overall leakage CES SWITCHING CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS Total gate charge (turn-on) Q - 176 264 g I = 20 A C Gate to emitter charge (turn-on) Q -19 30 nC ge V = 600 V CC V = 15 V GE Gate to collector charge (turn-on) Q - 89 134 gc Turn-on switching loss E V = 600 V, I = 20 A, V = 15 V, -0.92 - on CC C GE R = 5 , L = 1 mH, T = 25 C, g J Turn-off switching loss E -0.46 - off energy losses include tail and Total switching loss E -1.38 - tot diode reverse recovery mJ Turn-on switching loss E V = 600 V, I = 20 A, V = 15 V, -1.29 - on CC C GE R = 5 , L = 1 mH, T = 125 C, g J Turn-off switching loss E -0.81 - off energy losses include tail and Total switching loss E -2.1 - tot diode reverse recovery Input capacitance C - 2530 3790 ies V = 0 V GE Output capacitance C V = 30 V - 344 516 pF oes CC f = 1.0 MHz Reverse transfer capacitance C - 78 117 res T = 150 C, I = 120 A J C Reverse bias safe operating area RBSOA V = 1000 V, V = 1200 V Fullsquare CC p R = 5 , V = + 15 V to 0 V g GE T = 150 C J Short circuit safe operating area SCSOA V = 900 V, V = 1200 V 10 - - s CC p R = 5 , V = + 15 V to 0 V g GE DIODE SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 20 A - 2.48 2.94 C I = 40 A - 3.28 3.90 C Diode forward voltage drop V I = 20 A, T = 125 C - 2.44 2.84 V FM C J I = 40 A, T = 125 C - 3.45 4.14 C J I = 20 A, T = 150 C - 2.21 2.93 C J Reverse recovery energy of the diode E - 420 630 J rec V = 15 V, R = 5 , L = 200 H GE g Diode reverse recovery time t V = 600 V, I = 20 A - 98 150 ns rr CC C T = 125 C J Peak reverse recovery current I -33 50 A rr Revision: 09-Oct-17 Document Number: 94505 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000