333 3 VS-2EQH01-M3, VS-2EQH02-M3 www.vishay.com Vishay Semiconductors Ultrafast Rectifier, 2 A FRED Pt FEATURES eSMP Series Very low profile - typical height of 1.0 mm Ideal for automated placement Low forward voltage drop, low power losses Low leakage current Meets MSL level 1, per J-STD-020, Top View Bottom View LF maximum peak of 260 C For PFC, CRM snubber operation MicroSMP (DO-219AD) Material categorization: for definitions of compliance Anode Cathode please see www.vishay.com/doc 99912 LINKS TO ADDITIONAL RESOURCES TYPICAL APPLICATION For use in high frequency, freewheeling, DC/DC converters, 3D Models PFC, and in snubber industrial and automotive applications. MECHANICAL DATA PRIMARY CHARACTERISTICS Case: MicroSMP (DO-219AD) I 2 A F(AV) Molding compound meets UL 94 V-0 flammability rating V 100 V, 200 V R Terminals: matte tin plated leads, solderable per V at I 0.82 V F F J-STD-002, meets JESD 201 class 2 whisker test t (typ.) 33 ns rr Polarity: color band denotes cathode end I 30 A FSM T max. 175 C J Package MicroSMP (DO-219AD) Circuit configuration Single ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSVALUESUNITS VS-2EQH01-M3 100 V Peak repetitive reverse V RRM voltage VS-2EQH02-M3 200 Average rectified forward current I T = 137 C 2 F(AV) M A Non-repetitive peak surge current I T = 25 C, 10 ms sine pulse 30 FSM J Operating junction and storage temperatures T , T -55 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS VS-2EQH01-M3 100 - - Breakdown voltage, V , BR I = 100 A R blocking voltage V VS-2EQH02-M3 R 200 V I = 2 A - 0.96 1.05 F Forward voltage V F I = 2 A, T = 150 C - 0.82 0.84 F J V = V rated - - 1 R R Reverse leakage current I A R T = 150 C, V = V rated - - 25 J R R Junction capacitance C V = 200 V - 6 - pF T R Revision: 28-Jan-2021 Document Number: 96545 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD DVS-2EQH01-M3, VS-2EQH02-M3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1.0 A, dI /dt = 50 A/s, V = 30 V - 33 - F F R I = 0.5 A, I = 1 A, I = 0.25 A - - 23 F R rr Reverse recovery time t ns rr T = 25 C -19- J T = 125 C - 33 - J I = 2 A F T = 25 C - 1.7 - J Peak recovery current I dI /dt = 200 A/s A RRM F T = 125 C - 2.5 - J V = 100 V R T = 25 C - 15 - J Reverse recovery charge Q nC rr T = 125 C - 34 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and storage T , T -55 - 175 C J Stg temperature range (1) Thermal resistance, junction to mount R -16 20 thJM C/W Device mounted on FR4 PCB, 2 oz. Thermal resistance, junction to ambient R - 160 - thJA standard footprint VS-1EQH01-M3 2H1 Marking device Case style MicroSMP (DO-219AD) VS-2EQH02-M3 2H2 Note (1) Thermal resistance junction to mount follows JEDEC 51-14 transient dual interface test method (TDIM) 100 10 175 C 150 C 1 10 T = 175 C J 125 C 1 0.1 T = 150 C J T = 125 C J 25 C T = 25 C J T = -40 C J 0.01 0.1 0.2 0.7 1.2 1.7 2.2 2.7 0 25 50 75 100 125 150 175 200 V - Forward Voltage Drop (V) V - Reverse Voltage (V) F R Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 28-Jan-2021 Document Number: 96545 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Instantaneous Forward Current (A) F I - Reverse Current (A) R