VS-30BQ015PbF Vishay Semiconductors Schottky Rectifier, 3.0 A FEATURES 125 C T operation (V < 5 V) J R Optimized for OR-ing applications Cathode Anode Ultralow forward voltage drop High frequency operation SMC Guard ring for enhanced ruggedness and long term reliability High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance PRODUCT SUMMARY Meets MSL level 1, per J-STD-020, LF maximum peak of Package SMC 260 C Compliant to RoHS Directive 2002/95/EC I 3 A F(AV) Designed and qualified for industrial level V 15 V R V at I 0.3 V F F DESCRIPTION I 50 mA at 100 C RM The VS-30BQ015PbF surface mount Schottky rectifier has T max. 125 C been designed for applications requiring low forward drop J and very small foot prints on PC boards. The proprietary Diode variation Single die barrier technology allows for reliable operation up to 125 C E 1.5 mJ AS junction temperature. Typical applications are in disk drives, switching power supplies, converters, freewheeling diodes, battery charging, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform 3.0 A F(AV) V 15 V RRM I t = 5 s sine 650 A FSM p V 1.0 Apk, T = 75 C 0.30 V F J T Range - 55 to 125 C J VOLTAGE RATINGS PARAMETER SYMBOL VS-30BQ015PbF UNITS Maximum DC reverse voltage V 15 R V Maximum working peak reverse voltage V 25 RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 50 % duty cycle at T = 83 C, rectangular waveform 3.0 L Maximum average forward current I F(AV) 50 % duty cycle at T = 78 C, rectangular waveform 4.0 L A Following any rated 5 s sine or 3 s rect. pulse 650 Maximum peak one cycle I load condition and with FSM non-repetitive surge current 10 ms sine or 6 ms rect. pulse 75 rated V applied RRM Non-repetitive avalanche energy E T = 25 C, I = 0.5 A, L = 12 mH 1.5 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current I 0.5 A AR Frequency limited by T maximum V = 1.5 x V typical J A R Document Number: 94178 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 23-Feb-11 DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com 1 VS-30BQ015PbF Schottky Rectifier, 3.0 A Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS 3 A 0.35 T = 25 C J 6 A 0.40 (1) Maximum forward voltage drop V V FM 3 A 0.30 T = 75 C J 6 A 0.35 T = 25 C 4 J (1) Maximum reverse leakage current I V = Rated V mA RM R R T = 100 C 50 J Maximum junction capacitance C V = 5 V (test signal range 100 kHz to 1 MHz), 25 C 1120 pF T R DC Typical series inductance L Measured lead to lead 5 mm from package body 3.0 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS (1) Maximum junction temperature range T - 55 to 125 J C Maximum storage temperature range T - 55 to 150 Stg Maximum thermal resistance, (2) R 12 thJL junction to lead DC operation C/W Maximum thermal resistance, R 46 thJA junction to ambient 0.24 g Approximate weight 0.008 oz. Marking device Case style SMC (similar to DO-214AB) V3C Notes dP tot 1 (1) ------------- < -------------- thermal runaway condition for a diode on its own heatsink dT R J thJA (2) Mounted 1 square PCB www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94178 2 DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com Revision: 23-Feb-11