VS-30BQ100-M3 Vishay Semiconductors Schottky Rectifier, 3 A FEATURES Low forward voltage drop Guard ring for enhanced ruggedness and long Cathode Anode term reliability Halogen-free according to IEC 61249-2-21 SMC definition Small foot print, surface mountable High frequency operation PRODUCT SUMMARY Meets MSL level 1, per J-STD-020, LF maximum peak of Package SMC 260 C I 3.0 A F(AV) Compliant to RoHS directive 2002/95/EC V 100 V R DESCRIPTION V at I 0.62 V F F The VS-30BQ100-M3 surface mount Schottky rectifier has I 5 mA at 125 C RM been designed for applications requiring low forward drop T max. 175 C J and small foot prints on PC boards. Typical applications are Diode variation Single die in disk drives, switching power supplies, converters, freewheeling diodes, battery charging, and reverse battery E 3.0 mJ AS protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform 3.0 A F(AV) V 100 V RRM I t = 5 s sine 800 A FSM p V 3.0 Apk, T = 125 C 0.62 V F J T Range - 55 to 175 C J VOLTAGE RATINGS PARAMETER SYMBOL VS-30BQ100-M3 UNITS Maximum DC reverse voltage V R 100 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 50 % duty cycle at T = 148 C, rectangular waveform 3.0 L Maximum average forward current I F(AV) 50 % duty cycle at T = 138 C, rectangular waveform 4.0 L A Following any rated 5 s sine or 3 s rect. pulse 800 Maximum peak one cycle I load condition and with FSM non-repetitive surge current 10 ms sine or 6 ms rect. pulse 70 rated V applied RRM Non-repetitive avalanche energy E T = 25 C, I = 1.0 A, L = 6 mH 3.0 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current I 0.5 A AR Frequency limited by T maximum V = 1.5 x V typical J A R Document Number: 93360 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 13-Sep-10 DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com 1 VS-30BQ100-M3 Schottky Rectifier, 3 A Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS 3 A 0.79 T = 25 C J 6 A 0.90 (1) Maximum forward voltage drop V V FM 3 A 0.62 T = 125 C J 6 A 0.70 T = 25 C 0.5 J Maximum reverse leakage current I V = Rated V mA RM R R T = 125 C 5.0 J Maximum junction capacitance C V = 5 V (test signal range 100 kHz to 1 MHz), 25 C 115 pF T R DC Typical series inductance L Measured lead to lead 5 mm from package body 3.0 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width = 300 s, duty cycle = 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and (1) T , T - 55 to 175 C J Stg storage temperature range Maximum thermal resistance, (2) R 12 thJL junction to lead DC operation C/W Maximum thermal resistance, R 46 thJA junction to ambient 0.24 g Approximate weight 0.008 oz. Marking device Case style SMC (similar to DO-214AB) 3J Notes dP tot 1 (1) ------------- < -------------- thermal runaway condition for a diode on its own heatsink dT R J thJA (2) Mounted 1 square PCB www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 93360 2 DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com Revision: 13-Sep-10