VS-30WQ04FN-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 3.5 A FEATURES Base cathode Low forward voltage drop 4, 2 Guard ring for enhanced ruggedness and long term reliability Popular D-PAK outline 1 3 Small foot print, surface mountable Anode Anode D-PAK (TO-252AA) High frequency operation Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C PRODUCT SUMMARY Material categorization: for definitions of compliance Package D-PAK (TO-252AA) please see www.vishay.com/doc 99912 I 3.5 A F(AV) V 40 V DESCRIPTION R The VS-30WQ04FN-M3 surface mount Schottky rectifier V at I See Electrical table F F has been designed for applications requiring low forward I 24 mA at 125 C RM drop and small foot prints on PC board. Typical applications T max. 150 C J are in disk drives, switching power supplies, converters, Diode variation Single die freewheeling diodes, battery charging, and reverse battery protection. E 8 mJ AS MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform 3.5 A F(AV) V 40 V RRM I t = 5 s sine 500 A FSM p V 3 A , T = 125 C 0.49 V F pk J T -40 to +150 C J VOLTAGE RATINGS PARAMETER SYMBOL VS-30WQ04FN-M3 UNITS Maximum DC reverse voltage V R 40 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum average forward current I 50 % duty cycle at T = 135 C, rectangular waveform 3.5 F(AV) C See fig. 5 A Following any rated load 5 s sine or 3 s rect. pulse 500 Maximum peak one cycle non-repetitive I condition and with rated FSM surge current. See fig. 7 10 ms sine or 6 ms rect. pulse 80 V applied RRM Non-repetitive avalanche energy E T = 25 C, I = 1 A, L = 16 mH 8.0 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current I 1.0 A AR Frequency limited by T maximum V = 1.5 x V typical J A R Revision: 22-Nov-16 Document Number: 93297 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-30WQ04FN-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS 3 A 0.53 T = 25 C J 6 A 0.67 Maximum forward voltage drop (1) V V FM See fig. 1 3 A 0.49 T = 125 C J 6 A 0.62 T = 25 C 2 Maximum reverse leakage current J (1) I V = Rated V mA RM R R See fig. 2 T = 125 C 24 J Threshold voltage V 0.34 V F(TO) T = T maximum J J Forward slope resistance r 37.33 m t Typical junction capacitance C V = 5 V (test signal range 100 kHz to 1 MHz), 25 C 189 pF T R DC Typical series inductance L Measured lead to lead 5 mm from package body 5.0 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and (1) T , T -40 to +150 C J Stg storage temperature range Maximum thermal resistance, DC operation R 4.7 C/W thJC junction to case See fig. 4 0.3 g Approximate weight 0.01 oz. Marking device Case style D-PAK (similar to TO-252AA) 30WQ04FN Note dP 1 tot (1) ------------- < -------------- thermal runaway condition for a diode on its own heatsink dT R J thJA Revision: 22-Nov-16 Document Number: 93297 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000