VS-40MT120UHAPbF www.vishay.com Vishay Semiconductors Half Bridge IGBT MTP (Ultrafast NPT IGBT), 80 A FEATURES Ultrafast non punch through (NPT) technology Positive V temperature coefficient CE(on) Available 10 s short circuit capability Available Square RBSOA HEXFRED antiparallel diodes with ultrasoft reverse recovery and low V F Al O DBC 2 3 Very low stray inductance design for high speed operation UL approved file E78996 MTP Designed and qualified for industrial level Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. PRIMARY CHARACTERISTICS Please see the information / tables in this datasheet for details V 1200 V CES BENEFITS V typical at V = 15 V 3.36 V CE(on) GE Optimized for welding, UPS and SMPS applications I at T = 25 C 80 A C C Speed 8 kHz to 30 kHz Rugged with ultrafast performance Package MTP Benchmark efficiency above 20 kHz Circuit configuration Half bridge Outstanding ZVS and hard switching operation Low EMI, requires less snubbing Excellent current sharing in parallel operation Direct mounting to heatsink PCB solderable terminals Very low junction to case thermal resistance ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONS MAX. UNITS Collector to emitter breakdown voltage V 1200 V CES T = 25 C 80 C Continuous collector current I C T = 104 C 40 C Pulsed collector current I 160 CM A Clamped inductive load current I 160 LM Diode continuous forward current I T = 105 C 21 F C Diode maximum forward current I 160 FM Gate to emitter voltage V 20 GE V Any terminal to case, t = 1 min 2500 RMS isolation voltage V ISOL T = 25 C 463 C Maximum power dissipation (only IGBT) P W D T = 100 C 185 C Revision: 09-Oct-17 Document Number: 94507 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-40MT120UHAPbF www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Collector to emitter V V = 0 V, I = 250 A 1200 - - V (BR)CES GE C breakdown voltage Temperature coefficient of V / T V = 0 V, I = 3 mA (25 C to 125 C) - +1.1 - V/C (BR)CES J GE C breakdown voltage V = 15 V, I = 40 A - 3.36 3.59 GE C V = 15 V, I = 80 A - 4.53 4.91 GE C Collector to emitter saturation voltage V CE(on) V = 15 V, I = 40 A, T = 150 C - 3.88 4.10 V GE C J V = 15 V, I = 80 A, T = 150 C - 5.35 5.68 GE C J Gate threshold voltage V V = V , I = 500 A 4 - 6 GE(th) CE GE C Temperature coefficient of V /T V = V , I = 1 mA (25 C to 125 C) - -12 - mV/C GE(th) J CE GE C threshold voltage Transconductance g V = 50 V, I = 40 A, PW = 80 s - 35 - S fe CE C V = 0 V, V = 1200 V, T = 25 C - - 250 A GE CE J Zero gate voltage collector current I V = 0 V, V = 1200 V, T = 125 C - 0.4 1.0 CES GE CE J mA V = 0 V, V = 1200 V, T = 150 C - 0.2 10 GE CE J Gate to emitter leakage current I V = 20 V - - 250 nA GES GE SWITCHING CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Total gate charge (turn-on) Q - 399 599 g I = 40 A C Gate to emitter charge (turn-on) Q V = 600 V -43 65 nC ge CC V = 15 V GE Gate to collector charge (turn-on) Q - 187 281 gc Turn-on switching loss E V = 600 V, I = 40 A, V = 15 V, - 1.14 1.71 on CC C GE R = 5 , L = 200 H, T = 25 C, g J Turn-off switching loss E - 1.35 2.02 off energy losses include tail and diode Total switching loss E - 2.49 3.73 tot reverse recovery mJ Turn-on switching loss E V = 600 V, I = 40 A, V = 15 V, - 1.60 2.40 on CC C GE R = 5 , L = 200 H, T = 125 C, g J Turn-off switching loss E - 1.62 2.43 off energy losses include tail and diode Total switching loss E - 3.22 4.82 tot reverse recovery Input capacitance C - 5521 8282 ies V = 0 V GE Output capacitance C V = 30 V - 380 570 pF oes CC f = 1.0 MHz Reverse transfer capacitance C - 171 257 res T = 150 C, I = 160 A J C Reverse bias safe operating area RBSOA V = 1000 V, V = 1200 V Fullsquare CC p R = 5 , V = + 15 V to 0 V g GE T = 150 C, J Short circuit safe operating area SCSOA V = 900 V, V = 1200 V 10 - - s CC p R = 5 , V = + 15 V to 0 V g GE DIODE SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 40 A - 2.98 3.38 C I = 80 A - 3.90 4.41 C Diode forward voltage drop V I = 40 A, T = 125 C - 3.08 3.39 V FM C J I = 80 A, T = 125 C - 4.29 4.72 C J I = 40 A, T = 150 C - 3.12 3.42 C J Reverse recovery energy of the diode E - 574 861 J rec V = 15 V, R = 5 , L = 200 H GE g Diode reverse recovery time t V = 600 V, I = 40 A - 120 180 ns rr CC C T = 125 C J Peak reverse recovery current I -43 65 A rr Revision: 09-Oct-17 Document Number: 94507 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000