VS-6DKH02-M3/I Vishay

333 3 VS-6DKH02-M3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 2 x 3 A FRED Pt FEATURES Hyper fast recovery time, reduced Q , and soft 11 rr 22 recovery 33 175 C maximum operating junction temperature 4 Low forward voltage drop 88 Low leakage current 77 Specific for output and snubber operation 66 Meets MSL level 1, per J-STD-020, LF maximum peak 55 of 260 C FlatPAK 5 x 6 Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 1, 2 7, 8 DESCRIPTION / APPLICATIONS 3, 4 5, 6 State of the art hyper fast recovery rectifiers specifically designed with optimized performance of forward voltage LINKS TO ADDITIONAL RESOURCES drop and hyper fast recovery time. The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and 3D Models reliability characteristics. These devices are intended for use in snubber, boost, lighting, as high frequency rectifiers and freewheelin g PRIMARY CHARACTERISTICS diodes. I 2 x 3 A F(AV) The extremely optimized stored charge and low recovery V 200 V R current minimize the switching losses and reduce power dissipation in the switching element. V at I 0.71 V F F t 25 ns rr MECHANICAL DATA T max. 175 C J Case: FlatPAK 5 x 6 Package FlatPAK 5 x 6 Molding compound meets UL 94 V-0 flammability rating Circuit configuration Separated cathode Halogen-free, RoHS-compliant Terminals: matte tin plated leads, solderable per J-STD-002, meets JESD 201 class 2 whisker test ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSVALUESUNITS Peak repetitive reverse voltage V 200 RRM T = 170 C, DC V Solderpad Average rectified forward current per device I 3 F(AV) T = 169 C, D = 0.5 Solderpad per device T = 25 C, 10 ms sinusoidal pulse 147 J Non-repetitive peak surge current I A FSM per diode 70 ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, blocking voltage V , V I = 100 A 200 - - BR R R I = 3 A - 0.88 0.94 V F Forward voltage V F I = 3 A, T = 150 C - 0.71 0.74 F J V = V rated - - 2 R R Reverse leakage current I A R T = 150 C, V = V rated - 6 40 J R R Junction capacitance C V = 200 V - 14 - pF T R Revision: 19-Mar-2021 Document Number: 96082 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD D VS-6DKH02-M3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1.0 A, dI /dt = 50 A/s, V = 30 V - 26 - F F R I = 0.5 A, I = 1 A, I = 0.25 A - - 25 F R rr Reverse recovery time t ns rr T = 25 C -15- J T = 125 C - 25 - J I = 3 A F T = 25 C - 2 - J Peak recovery current I dI /dt = 200 A/s A RRM F T = 125 C - 3 - J V = 160 V R T = 25 C - 12 - J Reverse recovery charge Q nC rr T = 125 C - 40 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and T , T -55 - 175 C J Stg storage temperature range Thermal resistance, (1)(2) R - 90 103 thJA junction to ambient Thermal resistance, (3) R -2.3 2.6 C/W thJM junction to mount Notes (1) The heat generated must be less than thermal conductivity from junction to ambient dP /dT < 1 x R D J thJA (2) Free air, mounted or recommended copper pad area thermal resistance R - junction to ambient thJA (3) Mounted on infinite heatsink 100 100 T = 175 C J 10 T = 150 C J T = 175 C J 10 T = 150 C 1 J T = 125 C J 0.1 T = 125 C J 1 0.01 T = 25 C J T = 25 C J 0.001 T = -40 C J 0.1 0.0001 0.20.4 0.60.8 1.01.2 1.41.6 050 100 150 200 V - Forward Voltage Drop (V) V - Reverse Voltage (V) F R Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 19-Mar-2021 Document Number: 96082 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Instantaneous Forward Current (A) F I - Reverse Current (A) R