VS-70MT060WSP www.vishay.com Vishay Semiconductors MTP IGBT Power Module Primary Rectifier and PFC FEATURES Input rectifier bridge PFC stage with warp 2 IGBT and FRED Pt hyperfast diode Very low stray inductance design for high speed operation Integrated thermistor Isolated baseplate MTP UL approved file E78996 Designed and qualified for industrial level PRIMARY CHARACTERISTICS Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 INPUT BRIDGE DIODE, T = 150 C J V 1200 V RRM BENEFITS l at 80 C 48 A O Lower conduction losses and switching losses V at 25 C at 20 A 1.05 V FM Optimized for welding, UPS, and SMPS applications PFC IGBT, T = 150 C J V 600 V PCB solderable terminals CES V at 25 C at 40 A 1.93 V CE(on) Direct mounting to heatsink I at 80C 66 A C FRED Pt PFC DIODE, T = 150 C J V 600 V R I at 80 C 55 A F(DC) V at 25 C at 40 A 1.76 V F FRED Pt AP DIODE, T = 150 C J V 600 V R I at 80 C 13 A F(DC) V at 25 C at 4 A 1.1 V F Speed 30 kHz to 150 kHz Package MTP Circuit configuration Input rectifier bridge ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS Repetitive peak reverse voltage V 1200 V RRM Maximum average output current Input I T = 80 C 48 O C T = 150 C maximum Rectifier J A Bridge Surge current (Non-repetitive) I Rated V applied 250 FSM RRM 2 2 2 Maximum I t for fusing I t 10 ms, sine pulse 316 A s T = 25 C 600 Collector to emitter voltage V CES J V Gate to emitter voltage V I max. 250 ns 20 GE GES T = 25 C 96 Maximum continuous collector current C I C at V = 15 V, T = 150 C maximum PFC IGBT GE J T = 80 C 66 C A (1) Pulsed collector current I 250 CM Clamped inductive load current I 250 LM Maximum power dissipation P T = 25 C 378 W D C Revision: 09-Oct-17 Document Number: 93410 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-70MT060WSP www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS Repetitive peak reverse voltage V 600 V RRM T = 25 C 82 C Maximum continuous forward current I A F T = 150 C maximum PFC Diode J T = 80 C 55 C Maximum power dissipation P T = 25 C 181 W D C Maximum non-repetitive peak current I T = 25 C 360 A FSM C Repetitive peak reverse voltage V 600 V RRM T = 25 C 21 Maximum continuous forward current C I A F T = 150 C maximum AP Diode J T = 80 C 13 C Maximum power dissipation P T = 25 C 32 W D C Maximum non-repetitive peak current I T = 25 C 60 A FSM C Maximum operating junction temperature T 150 J C Storage temperature range T -40 to +150 Stg RMS isolation voltage V V t = 1 s, T = 25 C 3500 W ISOL RMS J R CONDUCTION PER JUNCTION - SINGLE PHASE BRIDGE DIODE SINE HALF WAVE CONDUCTION RECTANGULAR WAVE CONDUCTION DEVICES UNITS 180 120 90 60 30 180 120 90 60 30 70MT060WSP 0.273 0.302 0.322 0.338 0.350 0.236 0.288 0.294 0.287 0.235 C/W ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Blocking voltage BV I = 250 A 1200 - - V RRM R V = 1200 V - - 0.1 RRM Reverse leakage current I mA RRM V = 1200 V, T = 150 C - - 3.0 RRM J Input Rectifier I = 20 A - 1.05 1.2 F Bridge Forward voltage drop V V FM I = 20 A, T = 150 C - 0.94 1.0 F J Forward slope resistance rt -- 8.7 m T = 150 C J Conduction threshold voltage V - - 0.94 V T Collector to emitter BV V = 0 V, I = 0.5 mA 600 - - V CES GE C breakdown voltage Temperature coefficient of V / BR(CES) I = 0.5 mA (25 C to 125 C) - 0.6 - V/C C breakdown voltage T J V = 15 V, I = 40 A - 1.93 2.15 GE C Collector to emitter voltage V V PFC IGBT CE(on) V = 15 V, l = 40 A, T = 125 C - 2.30 2.55 GE C J Gate threshold voltage V V = V , I = 500 A 2.9 - 5.6 V GE(th) CE GE C V = 0 V, V = 600 V - - 0.1 Collector to emitter GE CE I mA CES leakage current V = 0 V, V = 600 V, T = 125 C - - 1 GE CE J Gate to emitter leakage I V = 20 V - - 100 nA GES GE I = 40 A - 1.76 2.23 F Forward voltage drop V FM I = 40 A, T = 125 C - 1.34 1.62 V F J PFC Diode Blocking voltage BV I = 0.5 mA 600 - - RM R V = 600 V - - 75 A RRM Reverse leakage current I RM V = 600 V, T = 125 C - - 0.5 mA RRM J I = 4 A - 1.1 1.28 F AP Diode Forward voltage drop V V FM I = 4 A, T = 125 C - 0.95 1.09 F J Revision: 09-Oct-17 Document Number: 93410 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000