333 3 VS-E5TH0812-M3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 8 A FRED Pt G5 FEATURES Base cathode Hyperfast and optimized Q 2 rr 2 Best in class forward voltage drop and switching losses trade off Optimized for high speed operation 1 175 C maximum operating junction temperature 1 3 3 Polyimide passivation Cathode Anode TO-220AC 2L Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 LINKS TO ADDITIONAL RESOURCES DESCRIPTION / APPLICATIONS 3D Models Featuring a unique combination of low conduction and switching losses, this rectifier is the right choice for high frequency converters, both soft switched / resonant. PRIMARY CHARACTERISTICS Specifically designed to improve efficiency of PFC and I 8 A F(AV) output rectification stages of EV / HEV battery charging V 1200 V stations, booster stage of solar inverters and UPS R applications, these devices are perfectly matched to V at I at 125 C 1.8 V F F operate with MOSFETs or high speed IGBTs. t 33 ns rr T max. 175 C J MECHANICAL DATA Package TO-220AC 2L Case: TO-220AC 2L Circuit configuration Single Molding compound meets UL 94 V-0 flammability rating Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 Polarity: as per marking device details ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONS VALUESUNITS Repetitive peak reverse voltage V 1200 V RRM Average rectified forward current I T = 122 C, D = 0.50 8 F(AV) C Repetitive peak forward current I T = 122 C, D = 0.50, f = 20 kHz 16 A FRM C Non-repetitive peak surge current I T = 45 C, t = 10 ms, sine wave 65 FSM C p Operating junction and storage temperature T , T -55 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS V , BR Breakdown voltage, blocking voltage I = 100 A 1200 - - R V R V I = 8 A - 1.9 2.5 F Forward voltage V F I = 8 A, T = 125 C - 1.8 - F J V = V rated - - 50 R R Reverse leakage current I A R T = 125 C, V = V rated - - 500 J R R Junction capacitance C V = 200 V - 5 - pF T R Series inductance L Measured to lead 5 mm from package body - 8 - nH S Revision: 30-Jul-2020 Document Number: 96606 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD D VS-E5TH0812-M3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS I = 1.0 A, dI /dt = 100 A/s, V = 30 V - 33 55 F F R Reverse recovery time t T = 25 C - 100 - ns rr J T = 125 C - 165 - J I = 6 A F T = 25 C - 8.0 - J Peak recovery current I dI /dt = 400 A/s A RRM F T = 125 C - 10 - J V = 400 V R T = 25 C - 300 - J Reverse recovery charge Q nC rr T = 125 C - 700 - J T = 25 C -60 - J Reverse recovery time t ns rr T = 125 C - 80 - J I = 8 A F T = 25 C - 16 - J Peak recovery current I dI /dt = 1000 A/s A RRM F T = 125 C - 26 - J V = 800 V R T = 25 C - 570 - J Reverse recovery charge Q nC rr T = 125 C - 1350 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOLTEST CONDITIONSMIN. TYP. MAX. UNITS Thermal resistance, junction-to-case R --2.3C/W thJC -2 - g Weight -0.07 - oz. 6.0 12 kgf cm Mounting torque - (5.0) (10) (lbf in) Maximum junction and storage temperature range T , T -55 - 175 C J Stg Marking device Case style TO-220AC 2L E5TH0812 Revision: 30-Jul-2020 Document Number: 96606 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000