VS-KBPC8 Series www.vishay.com Vishay Semiconductors Single Phase Rectifier Bridge, 8 A FEATURES Suitable for printed circuit board or chassis mounting Compact construction High surge current capability Fully characterized data Wide temperature range Material categorization: for definitions of compliance D-72 please see www.vishay.com/doc 99912 DESCRIPTION PRIMARY CHARACTERISTICS The VS-KBPC series of single phase rectifier bridge consists I 8.0 A O of four silicon junctions connected as a full bridge. These V 50 V to 1000 V RRM device are intended for general use in industrial and Package D-72 consumer equipment. Circuit configuration Single phase bridge MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS Resistive load 8 A I Capacitive load 6.4 O T 50 C C 50 Hz 125 I A FSM 60 Hz 137 50 Hz 110 2 2 I t A s 60 Hz 100 V Range 50 to 1000 V RRM T -55 to +150 C J ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS V , MAXIMUM REPETITIVE V , MAXIMUM NON-REPETITIVE RRM RSM PART NUMBER PEAK REVERSE VOLTAGE PEAK REVERSE VOLTAGE V V VS-KBPC8005 50 80 VS-KBPC801 100 150 VS-KBPC802 200 300 VS-KBPC804 400 500 VS-KBPC806 600 700 VS-KBPC808 800 900 VS-KBPC810 1000 1100 Revision: 18-May-2018 Document Number: 93586 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-KBPC8 Series www.vishay.com Vishay Semiconductors FORWARD CONDUCTION PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS T = 50 C, resistive or inductive load 8.0 C Maximum DC output current I O T = 50 C, capacitive load 6.4 C A t = 10 ms, 20 ms Following any rated load 125 Maximum peak one cycle, I condition and with rated FSM non-repetitive surge current t = 8.3 ms, 16.7 ms 137 V reapplied RRM t = 10 ms 78 t = 8.3 ms 71 Initial T = T maximum J J 2 2 2 Maximum I t capability for fusing I t A s 100 % V reapplied RRM t = 10 ms 110 t = 8.3 ms 1000 2 2 2 Maximum I t capability for fusing I t t = 0.1 to 10 ms, no voltage reapplied 1105 A s Maximum peak forward voltage per diode V I = 3.0 A, T = 25 C 1.0 V FM FM J T = 25 C, 100 % V 10 A J RRM Typical peak reverse leakage per diode I RM T = 150 C, 100 % V 1.0 mA J RRM Operating frequency range f 400 to 1000 Hz Maximum repetitive peak reverse V 50 to 1000 V RRM voltage range THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL VALUES UNITS Operating and storage temperature range T , T -55 to +150 C J Stg Thermal resistance, junction to case R 6K/W thJC 6g Approximate weight 0.21 oz. 10 140 130 KBPC8 9 KBPC8... 50 Hz 120 8 110 100 7 Resistive load 90 6 80 5 70 60 4 50 Capacitive load 3 40 30 2 20 1 10 0 0 0.01 0.1 1.0 10 0 20 40 60 80 100 120 140 160 Maximum Allowable Ambient Temperature (C) Pulse Train Duration (s) Fig. 1 - Current Ratings Fig. 2 - Non-Repetitive Surge Ratings LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc 95250 Revision: 18-May-2018 Document Number: 93586 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Average Output Current (A) Maximum Peak Surge Current (A)