VSSAF3M6 www.vishay.com Vishay General Semiconductor Surface Mount Trench MOS Barrier Schottky Rectifier FEATURES TMBS eSMP Series Very low profile - typical height of 0.95 mm Ideal for automated placement Trench MOS Schottky technology Low power losses, high efficiency Low forward voltage drop Bottom View Top View Meets MSL level 1, per J-STD-020, LF maximum peak SlimSMA (DO-221AC) of 260 C AEC-Q101 qualified available Cathode Anode - Automotive ordering code: base P/NHM3 Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 click logo to get started DESIGN SUPPORT TOOLS TYPICAL APPLICATIONS Models For use in high frequency inverters, freewheeling, DC/DC Available converters, and polarity protection in commercial, industrial, and automotive applications. PRIMARY CHARACTERISTICS MECHANICAL DATA I 3 A F(AV) Case: SlimSMA (DO-221AC) Molding compound meets UL 94 V-0 flammability rating V 60 V RRM Base P/N-M3 - halogen-free, RoHS-compliant I 80 A FSM Base P/NHM3 - halogen-free, RoHS-compliant, and V at I = 3 A (125 C) 0.46 V F F AEC-Q101 qualified T max. 175 C J Terminals: matte tin plated leads, solderable per Package SlimSMA (DO-221AC) J-STD-002 and JESD 22-B102 M3 and HM3 suffix meets JESD 201 class 2 whisker test Circuit configuration Single Polarity: color band denotes cathode end MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VSSAF3M6 UNIT Device marking code 3M6 Maximum repetitive peak reverse voltage V 60 V RRM (1) I 2.5 F(AV) Maximum DC forward current A (2) I 3 F(AV) Peak forward surge current 8.3 ms single half sine-wave I 80 A FSM superimposed on rated load Operating junction and storage temperature range T , T -40 to +175 C J STG Notes (1) Free air, mounted on recommended copper pad area (2) Mounted on 30 mm x 30 mm pad area Revision: 04-May-2018 Document Number: 87514 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VSSAF3M6 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT I = 1.5 A 0.49 - F T = 25 C A I = 3 A 0.54 0.62 F (1) Instantaneous forward voltage V V F I = 1.5 A 0.39 - F T = 125 C A I = 3 A 0.46 0.54 F T = 25 C -0.3 A (2) Reverse current V = 60 V I mA R R T = 125 C 2.0 6.0 A Typical junction capacitance 4.0 V, 1 MHz C 500 - pF J Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: pulse width 5 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise specified) A PARAMETER SYMBOL VSSAF3M6 UNIT (1)(2) R 115 JA Typical thermal resistance C/W (3) R 12 JM Notes (1) Free air, mounted on recommended PCB, 2 oz. pad area thermal resistance R - junction to ambient, R - junction to mount JA JM (2) The heat generated must be less than thermal conductivity from junction-to-ambient: dP /DT < 1/R D J JA (3) Mounted on 30 mm x 30 mm pad area ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE VSSAF3M6-M3/H 0.032 H 3500 7 diameter plastic tape and reel VSSAF3M6-M3/I 0.032 I 14 000 13 diameter plastic tape and reel (1) VSSAF3M6HM3/H 0.032 H 3500 7 diameter plastic tape and reel (1) VSSAF3M6HM3/I 0.032 I 14 000 13 diameter plastic tape and reel Note (1) AEC-Q101 qualified Revision: 04-May-2018 Document Number: 87514 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000