X-On Electronics has gained recognition as a prominent supplier of VS-ST083S08PFM1P SCRs across the USA, India, Europe, Australia, and various other global locations. VS-ST083S08PFM1P SCRs are a product manufactured by Vishay. We provide cost-effective solutions for SCRs, ensuring timely deliveries around the world.

VS-ST083S08PFM1P Vishay

VS-ST083S08PFM1P electronic component of Vishay
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Part No.VS-ST083S08PFM1P
Manufacturer: Vishay
Category: SCRs
Description: SCRs Thyristors - TO-8394 COM RD-e3
Datasheet: VS-ST083S08PFM1P Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 97.8312
10 : USD 92.788
25 : USD 92.2858
N/A

Obsolete
   
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We are delighted to provide the VS-ST083S08PFM1P from our SCRs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the VS-ST083S08PFM1P and other electronic components in the SCRs category and beyond.

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VS-ST083SP Series www.vishay.com Vishay Semiconductors Inverter Grade Thyristors (Stud Version), 85 A FEATURES Center amplifying gate High surge current capability Low thermal impedance High speed performance Compression bonding TO-94 (TO-209AC) Designed and qualified for industrial level Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 PRIMARY CHARACTERISTICS Package TO-94 (TO-209AC) TYPICAL APPLICATIONS Circuit configuration Single SCR Inverters I 85 A T(AV) Choppers V /V 400 V, 800 V, 1000 V, 1200 V DRM RRM Induction heating V 2.15 V TM All types of force-commutated converters I at 50 Hz 2450 A TSM I at 60 Hz 2560 A TSM I 200 mA GT T /T 85 C C hs MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS VALUES UNITS 85 A I T(AV) T 85 C C I 135 A T(RMS) 50 Hz 2450 A I TSM 60 Hz 2560 A 50 Hz 30 2 2 I t kA s 60 Hz 27 V /V 400 to 1200 V DRM RRM t Range 10 to 20 s q T -40 to +125 C J ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS V /V , MAXIMUM V , MAXIMUM I /I MAX. DRM RRM RSM DRM RRM VOLTAGE TYPE NUMBER REPETITIVE PEAK VOLTAGE NON-REPETITIVE PEAK VOLTAGE AT T = T MAX. J J CODE V V mA 04 400 500 08 800 900 VS-ST083S 30 10 1000 1100 12 1200 1300 Revision: 24-Jan-18 Document Number: 94334 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-ST083SP Series www.vishay.com Vishay Semiconductors CURRENT CARRYING CAPABILITY I TM I I TM TM FREQUENCY UNITS 100 s 180 el 180 el 50 Hz 210 120 330 270 2540 1930 400 Hz 200 120 350 210 1190 810 A 1000 Hz 150 80 320 190 630 400 2500 Hz 70 25 220 85 250 100 Recovery voltage V 50 50 50 50 50 50 r V Voltage before turn-on V V V V d DRM DRM DRM Rise of on-state current dI/dt 50 50 - - - - A/s Case temperature 608560 856085C Equivalent values for RC circuit 22/0.15 22/0.15 22/0.15 W/F ON-STATE CONDUCTION PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS 85 A Maximum average on-state current at I 180 conduction, half sine wave T(AV) case temperature 85 C Maximum RMS on-state current I DC at 77 C case temperature 135 T(RMS) t = 10 ms 2450 No voltage reapplied t = 8.3 ms 2560 A Maximum peak, one half cycle, I TSM non-repetitive surge current t = 10 ms 2060 100 % V RRM reapplied t = 8.3 ms 2160 Sinusoidal half wave, initial T = T maximum t = 10 ms J J 30 No voltage reapplied t = 8.3 ms 27 2 2 2 Maximum I t for fusing I t kA s t = 10 ms 21 100 % V RRM reapplied t = 8.3 ms 19 2 2 2 Maximum I t for fusing I t t = 0.1 ms to 10 ms, no voltage reapplied 300 kA s Maximum peak on-state voltage V I = 300 A, T = T maximum, t = 10 ms sine wave pulse 2.15 TM TM J J p Low level value of threshold voltage V (16.7 % x x I < I < x I ), T = T maximum 1.46 V T(TO)1 T(AV) T(AV) J J High level value of threshold voltage V (I > x I ), T = T maximum 1.52 T(TO)2 T(AV) J J Low level value of forward slope resistance r (16.7 % x x I < I < x I ), T = T maximum 2.32 t1 T(AV) T(AV) J J m High level value of forward slope resistance r (I > x I ), T = T maximum 2.34 t2 T(AV) J J Maximum holding current I T = 25 C, I > 30 A 600 H J T mA Typical latching current I T = 25 C, V = 12 V, R = 6 , I = 1 A 1000 L J A a G SWITCHING VALUES PARAMETER SYMBOL TEST CONDITIONS UNITS MIN. MAX. Maximum non-repetitive rate of rise dI/dt T = T max., V = Rated V , I = 2 x dI/dt 1000 A/s J J DRM DRM TM of turned on current T = 25 C, V = Rated V , I = 50 A DC, t = 1 s J DM DM TM p Typical delay time t 0.80 d Resistive load, gate pulse: 10 V, 5 source s T = T maximum, I = 100 A, J J TM Maximum turn-off time t commutating dI/dt = 10 A/s 10 20 q V = 50 V, t = 200 s, dV/dt = 200 V/s R p Revision: 24-Jan-18 Document Number: 94334 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
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