VS-ST1000C..K Series www.vishay.com Vishay Semiconductors Phase Control Thyristors (Hockey PUK Version), 1473 A FEATURES Center amplifying gate Metal case with ceramic insulator International standard case K-PUK (A-24) High profile hockey PUK Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 TYPICAL APPLICATIONS K-PUK (A-24) DC motor controls PRIMARY CHARACTERISTICS Controlled DC power supplies I 1473 A T(AV) AC controllers 1200 V, 1400 V, 1600 V, 1800 V, V /V DRM RRM 2000 V, 2200 V, 2400 V V 1.80 V TM I 100 mA GT T -40 C to +125 C J Package K-PUK (A-24) Circuit configuration Single SCR MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS VALUES UNITS 1473 A I T(AV) T 55 C hs 2913 A I T(RMS) T 25 C hs 50 Hz 20.0 I A TSM 60 Hz 21.2 50 Hz 2000 2 2 I t kA s 60 Hz 1865 2 2 I t 20 000 kA s V /V Range 1200 to 2400 V DRM RRM t Typical 300 s q T Range -40 to +125 C J ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS V , MAXIMUM RSM V , MAXIMUM REPETITIVE PEAK I MAXIMUM RRM RRM VOLTAGE NON-REPETITIVE PEAK REVERSE TYPE NUMBER REVERSE VOLTAGE AT T = 125 C J VOLTAGE CODE V mA V 12 1200 1300 14 1400 1500 16 1600 1700 VS-ST1000C..K 18 1800 1900 100 20 2000 2100 22 2200 2300 24 2400 2500 Revision: 21-Sep-17 Document Number: 93714 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-ST1000C..K Series www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS 1473 (630) A Maximum average on-state current 180 conduction, half sine wave I T(AV) at heatsink temperature Double side (single side) cooled 55 (85) C Maximum RMS on-state current I DC at 25 C heatsink temperature double side cooled 6540 A T(RMS) t = 10 ms 20.0 No voltage reapplied t = 8.3 ms 21.2 Maximum peak, one-cycle, I kA TSM non-repetitive surge current t = 10 ms 17.0 100 % V RRM reapplied t = 8.3 ms 18.1 Sinusoidal half wave, initial T = T maximum t = 10 ms J J 2000 No voltage reapplied t = 8.3 ms 1865 2 2 2 Maximum I t for fusing I t kA s t = 10 ms 1445 100 % V RRM reapplied t = 8.3 ms 1360 2 2 2 Maximum I t for fusing I t t = 0.1 ms to 10 ms, no voltage reapplied 20 000 kA s Low level value of threshold voltage V (16.7 % x x I < I < x I ), T = T maximum 0.950 T(TO)1 T(AV) T(AV) J J V High level value of threshold voltage V (I > x I ), T = T maximum 1.024 T(TO)2 T(AV) J J Low level value of on-state slope resistance r (16.7 % x x I < I < x I ), T = T maximum 0.283 t1 T(AV) T(AV) J J m High level value of on-state slope resistance r (I > x I ), T = T maximum 0.265 t2 T(AV) J J Maximum on-state voltage drop V I = 3000 A, T = 125 C, t = 10 ms sine pulse 1.80 V TM pk J p Maximum holding current I 600 H T = 25 C, anode supply 12 V resistive load mA J Typical latching current I 1000 L SWITCHING PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum non-repetitive rate of Gate drive 20 V, 20 , t 1 s r dI/dt 1000 A/s rise of turned-on current T = T maximum, anode voltage 80 % V J J DRM Gate current 1 A, dI /dt = 1 A/s g Typical delay time t 1.9 d V = 0.67 % V , T = 25 C d DRM J s I = 550 A, T = T maximum, dI/dt = 40 A/s, TM J J Typical turn-off time t 300 q V = 50 V, dV/dt = 20 V/s, gate 0 V 100 , t = 500 s R p BLOCKING PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum critical rate of rise of dV/dt T = T maximum linear to 80 % rated V 500 V/s J J DRM off-state voltage Maximum peak reverse and I , RRM T = T maximum, rated V /V applied 100 mA J J DRM RRM off-state leakage current I DRM Revision: 21-Sep-17 Document Number: 93714 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000