VS-ST223C..C Series www.vishay.com Vishay Semiconductors Inverter Grade Thyristors (Hockey PUK Version), 390 A FEATURES Metal case with ceramic insulator All diffused design Center amplifying gate Guaranteed high dV/dt International standard case A-PUK (TO-200AB) Guaranteed high dI/dt High surge current capability Low thermal impedance A-PUK (TO-200AB) High speed performance Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 PRIMARY CHARACTERISTICS Package A-PUK (TO-200AB) TYPICAL APPLICATIONS Circuit configuration Single SCR Inverters I 390 A T(AV) Choppers V /V 400 V, 800 V DRM RRM V 1.58 V Induction heating TM I at 50 Hz 5260 A TSM All types of force-commutated converters I at 60 Hz 5510 A TSM I 200 mA GT T /T 55 C C hs MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS VALUES UNITS 390 A I T(AV) T 55 C hs 745 A I T(RMS) T 25 C hs 50 Hz 5850 I A TSM 60 Hz 6130 50 Hz 171 2 2 I t kA s 60 Hz 156 V /V 400 to 800 V DRM RRM t Range 10 to 30 s q T -40 to +125 C J ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS V /V , MAXIMUM V , MAXIMUM I /I MAXIMUM DRM RRM RSM DRM RRM VOLTAGE TYPE NUMBER REPETITIVE PEAK VOLTAGE NON-REPETITIVE PEAK VOLTAGE AT T = T MAXIMUM J J CODE V V mA 04 400 500 VS-ST223C..C 40 08 800 900 Revision: 13-Sep-17 Document Number: 93672 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-ST223C..C Series www.vishay.com Vishay Semiconductors CURRENT CARRYING CAPABILITY I TM I I TM TM FREQUENCY UNITS 180 el 180 el 100 s 50 Hz 930 800 1430 1220 5870 5240 400 Hz 910 770 1490 1300 3120 2740 A 1000 Hz 780 650 1430 1260 1880 1640 2500 Hz 490 400 1070 920 1000 860 Recovery voltage V 50 50 50 r V Voltage before turn-on V V V V d DRM DRM DRM Rise of on-state current dI/dt 50 - - A/s Heatsink temperature 4055 40554055 C Equivalent values for RC circuit 47/0.22 47/0.22 47/0.22 F ON-STATE CONDUCTION PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS 390 (150) A Maximum average on-state current 180 conduction, half sine wave I T(AV) at heatsink temperature Double side (single side) cooled 55 (85) C Maximum RMS on-state current I DC at 25 C heatsink temperature double side cooled 745 T(RMS) t = 10 ms 5850 No voltage reapplied t = 8.3 ms 6130 A Maximum peak, one half cycle, I TSM non-repetitive surge current t = 10 ms 4920 100 % V RRM reapplied t = 8.3 ms 5150 Sinusoidal half wave, initial T = T maximum J J t = 10 ms 171 No voltage reapplied t = 8.3 ms 156 2 2 2 Maximum I t for fusing I t kA s t = 10 ms 121 100 % V RRM reapplied t = 8.3 ms 110 2 2 2 Maximum I t for fusing I t t = 0.1 to 10 ms, no voltage reapplied 1710 kA s Maximum peak on-state voltage V I = 600 A, T = T maximum, t = 10 ms sine wave pulse 1.58 TM TM J J p Low level value of threshold voltage V (16.7 % x x I < I < x I ), T = T maximum 1.05 V T(TO)1 T(AV) T(AV) J J High level value of threshold voltage V (I > x I ), T = T maximum 1.09 T(TO)2 T(AV) J J Low level value of forward slope resistance r (16.7 % x x I < I < x I ), T = T maximum 0.88 t1 T(AV) T(AV) J J m High level value of forward slope r (I > x I ), T = T maximum 0.82 t2 T(AV) J J resistance Maximum holding current I T = 25 C, I > 30 A 600 H J T mA Typical latching current I T = 25 C, V = 12 V, R = 6 , I = 1 A 1000 L J A a G SWITCHING VALUES PARAMETER SYMBOL TEST CONDITIONS UNITS MIN. MAX. Maximum non-repetitive rate dI/dt T = T maximum, V = Rated V , I = 2 x dI/dt 1000 A/s J J DRM DRM TM of rise of turned on current T = 25 C, V = Rated V , I = 50 A DC, t = 1 s J DM DRM TM p Typical delay time t 0.78 d Resistive load, gate pulse: 10 V, 5 source s T = T maximum, J J Maximum turn-off time t I = 300 A, commutating dI/dt = 20 A/s 10 30 q TM V = 50 V, t = 500 s, dV/dt: See table in device code R p Revision: 13-Sep-17 Document Number: 93672 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000