VS-STPS1045B-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 10 A FEATURES Base cathode Low forward voltage drop 4, 2 Guard ring for enhanced ruggedness and long term reliability Popular D-PAK outline 1 3 Small foot print, surface mountable D-PAK (TO-252AA) Anode Anode High frequency operation Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C PRODUCT SUMMARY Material categorization: for definitions of compliance Package D-PAK (TO-252AA) please see www.vishay.com/doc 99912 I 10 A F(AV) V 45 V R DESCRIPTION V at I 0.57 V F F The VS-STPS1045B-M3 surface mount Schottky I 15 mA at 125 C RM rectifier has been designed for applications requiring low T max. 175 C J forward drop and small foot prints on PC board. Typical Diode variation Single die applications are in disk drives, switching power supplies, converters, freewheeling diodes, battery charging, and E 20 mJ AS reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform 10 A F(AV) V 45 V RRM I t = 5 s sine 390 A FSM p V 10 A , T = 125 C 0.57 V F pk J T Range -40 to +175 C J VOLTAGE RATINGS PARAMETER SYMBOLVS-STPS1045B-M3UNITS Maximum DC reverse voltage V R 45 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum average forward current I 50 % duty cycle at T = 151 C, rectangular waveform 10 F(AV) C See fig. 5 A Maximum peak one cycle Following any rated load 5 s sine or 3 s rect. pulse 390 non-repetitive surge current I condition and with rated FSM 10 ms sine or 6 ms rect. pulse 75 See fig. 7 V applied RRM Non-repetitive avalanche energy E T = 25 C, I = 3.0 A, L = 4.40 mH 20 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current I 3.0 A AR Frequency limited by T maximum V = 1.5 x V typical J A R Revision: 24-Nov-16 Document Number: 93327 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-STPS1045B-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 10 A 0.63 T = 25 C J 20 A 0.84 Maximum forward voltage drop (1) V V FM See fig. 1 10 A 0.57 T = 125 C J 20 A 0.72 T = 25 C 0.2 Maximum reverse leakage current J (1) I V = Rated V mA RM R R See fig. 2 T = 125 C 15 J Typical junction capacitance C V = 5 V (test signal range 100 kHz to 1 MHz), 25 C 760 pF T R DC Typical series inductance L Measured lead to lead 5 mm from package body 5.0 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage (1) T , T -40 to +175 C J Stg temperature range Maximum thermal resistance, DC operation R 3.0 thJC junction to case See fig. 4 C/W Maximum thermal resistance, R 50 thJA junction to ambient 0.3 g Approximate weight 0.01 oz. Marking device Case style D-PAK (similar to TO-252AA) STPS1045B Note dP 1 tot (1) ------------- < -------------- thermal runaway condition for a diode on its own heatsink dT R J thJA Revision: 24-Nov-16 Document Number: 93327 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000