VS-VSKD71.., VS-VSKE71.., VS-VSKJ71.., VS-VSKC71.. www.vishay.com Vishay Semiconductors AAP Gen 7 (TO-240AA) Power Modules Standard Diodes, 80 A FEATURES High voltage Industrial standard package Low thermal resistance UL approved file E78996 Designed and qualified for industrial level Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 AAP Gen 7 (TO-240AA) BENEFITS Excellent thermal performances obtained by the usage of PRIMARY CHARACTERISTICS exposed direct bonded copper substrate I 80 A F(AV) Up to 1600 V Type Modules - Diode, High Voltage High surge capability Package AAP Gen 7 (TO-240AA) Two diodes doubler circuit, two Easy mounting on heatsink Circuit configuration diodes common cathode, two diodes common anode, single diode ELECTRICAL DESCRIPTION These modules are intended for general purpose high MECHANICAL DESCRIPTION voltage applications such as high voltage regulated power The AAP Gen 7 (TO-240AA), new generation of AAP module, supplies, lighting circuits, temperature and motor speed combines the excellent thermal performances obtained by control circuits, UPS and battery charger. the usage of exposed direct bonded copper substrate, with advanced compact simple package solution and simplified internal structure with minimized number of interfaces. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS 80 A I F(AV) T 110 C C I 126 F(RMS) 50 Hz 1500 A I FSM 60 Hz 1570 50 Hz 11.25 2 2 I t kA s 60 Hz 10.26 2 2 I t 112.5 kA s V Range 400 to 1600 V RRM T , T -40 to +150 C Stg J Revision: 05-Jan-18 Document Number: 94626 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-VSKD71.., VS-VSKE71.., VS-VSKJ71.., VS-VSKC71.. www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS V , MAXIMUM REPETITIVE PEAK V , MAXIMUM NON-REPETITIVE I MAXIMUM RRM RSM RRM VOLTAGE TYPE NUMBER REVERSE VOLTAGE PEAK REVERSE VOLTAGE AT T = 150 C J CODE V V mA 04 400 500 06 600 700 08 800 900 VS-VSK.71 10 1000 1100 10 12 1200 1300 14 1400 1500 16 1600 1700 FORWARD CONDUCTION PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 80 A Maximum average forward current I 180 conduction, half sine wave F(AV) at case temperature 110 C Maximum RMS forward current I 126 F(RMS) t = 10 ms No voltage 1500 reapplied t = 8.3 ms 1570 A Maximum peak, one-cycle forward, I FSM non-repetitive surge current t = 10 ms 100 % V 1260 RRM reapplied t = 8.3 ms 1320 Sinusoidal half wave, initial T = T maximum t = 10 ms No voltage J J 11.25 reapplied t = 8.3 ms 10.26 2 2 2 Maximum I t for fusing I t kA s t = 10 ms 100 % V 7.95 RRM reapplied t = 8.3 ms 7.23 2 2 2 Maximum I t for fusing I t t = 0.1 ms to 10 ms, no voltage reapplied 112.5 kA s Low level value of threshold voltage V (16.7 % x x I < I < x I ), T = T maximum 0.73 F(TO)1 F(AV) F(AV) J J V High level value of threshold voltage V (I > x I ), T = T maximum 0.83 F(TO)2 F(AV) J J Low level value of forward r (16.7 % x x I < I < x I ), T = T maximum 3.22 f1 F(AV) F(AV) J J slope resistance m High level value of forward r (I > x I ), T = T maximum 2.89 f2 F(AV) J J slope resistance Maximum forward voltage drop V I = x I , T = 25 C, t = 400 s square wave 1.6 V FM FM F(AV) J p BLOCKING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum peak reverse I T = 150 C 10 mA RRM J leakage current 3000 (1 min) Maximum RMS insulation voltage V 50 Hz V INS 3600 (1 s) Revision: 05-Jan-18 Document Number: 94626 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000